Hefei Purple Horn E-Commerce Co., Ltd.
| Output Voltage(VO(on)) | 200mV |
| Input Resistor | 13kΩ |
| Resistor Ratio | 0.21 |
| Collector - Emitter Voltage VCEO | 50V |
| Description | Pre-Biased Bipolar Transistor (BJT) 50V 100mA 187mW Surface Mount SOT-363 |
| Mfr. Part # | S-LMUN5114DW1T1G |
| Package | SOT-363 |
| Model Number | S-LMUN5114DW1T1G |
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Product Specification
| Output Voltage(VO(on)) | 200mV | Input Resistor | 13kΩ |
| Resistor Ratio | 0.21 | Collector - Emitter Voltage VCEO | 50V |
| Description | Pre-Biased Bipolar Transistor (BJT) 50V 100mA 187mW Surface Mount SOT-363 | Mfr. Part # | S-LMUN5114DW1T1G |
| Package | SOT-363 | Model Number | S-LMUN5114DW1T1G |
The LMUN5111DW1T1G Series SC-88/SOT-363 Dual Bias Resistor Transistors are PNP Silicon Surface Mount Transistors featuring a monolithic bias resistor network. These devices integrate a single transistor with a base resistor and a base-emitter resistor, effectively replacing discrete components and their associated bias networks. This integration simplifies circuit design, reduces board space, and lowers component count, making them ideal for low-power surface mount applications where space is limited. The series is available in 8 mm, 7-inch/3000 unit tape and reel packaging.
| Characteristic | Symbol | Model(s) | Min | Typ | Max | Unit | Notes |
|---|---|---|---|---|---|---|---|
| Maximum Ratings | |||||||
| Collector-Base Voltage | VCBO | Common for Q1 and Q2 | -50 | Vdc | TA = 25C | ||
| Collector-Emitter Voltage | VCEO | Common for Q1 and Q2 | -50 | Vdc | TA = 25C | ||
| Collector Current | IC | Common for Q1 and Q2 | -100 | mAdc | TA = 25C | ||
| Thermal Characteristics (One Junction Heated) | |||||||
| Total Device Dissipation | PD | 187 | mW | TA = 25C (Note 1) | |||
| Derate above 25C | 1.5 | mW/C | (Note 1) | ||||
| Thermal Resistance, Junction-to-Ambient | RJA | 670 | C/W | (Note 1) | |||
| Thermal Resistance, Junction-to-Ambient | RJA | 490 | C/W | (Note 2) | |||
| Thermal Characteristics (Both Junctions Heated) | |||||||
| Total Device Dissipation | PD | 250 | mW | TA = 25C (Note 1) | |||
| Derate above 25C | 2.0 | mW/C | (Note 1) | ||||
| Thermal Resistance, Junction-to-Ambient | RJA | 493 | C/W | (Note 1) | |||
| Thermal Resistance, Junction-to-Ambient | RJA | 325 | C/W | (Note 2) | |||
| Thermal Resistance, Junction-to-Lead | RJL | 188 | C/W | (Note 1) | |||
| Thermal Resistance, Junction-to-Lead | RJL | 208 | C/W | (Note 2) | |||
| Junction and Storage Temperature | TJ, Tstg | -55 | +150 | C | |||
| Electrical Characteristics | |||||||
| Collector-Base Cutoff Current | ICBO | Common for Q1 and Q2 | -100 | nAdc | VCB = -50 V, IE = 0, TA = 25C | ||
| Collector-Emitter Cutoff Current | ICEO | Common for Q1 and Q2 | -500 | nAdc | VCE = -50 V, IB = 0, TA = 25C | ||
| Emitter-Base Cutoff Current | IEBO | LMUN5111DW1T1G | -0.5 | mAdc | VEB = -6.0 V, IC = 0, TA = 25C | ||
| Collector-Base Breakdown Voltage | V(BR)CBO | Common for Q1 and Q2 | -50 | Vdc | IC = -10 A, IE = 0, TA = 25C | ||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | Common for Q1 and Q2 | -50 | Vdc | IC = -2.0 mA, IB = 0, TA = 25C (Note 3) | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | LMUN5111DW1T1G | -0.25 | Vdc | IC = -10 mA, IB = -0.3 mA, TA = 25C (Note 4) | ||
| DC Current Gain | hFE | LMUN5111DW1T1G | 35 | VCE = -10 V, IC = -5.0 mA, TA = 25C (Note 4) | |||
| Input Resistor R1 | R1 | LMUN5111DW1T1G | 7.0 | k | |||
| Resistor Ratio R1/R2 | R1/R2 | LMUN5111DW1T1G | 0.8 | ||||
| Package Dimensions (SC-88/SOT-363) | See page 19 | ||||||
| Shipping Options | LMUN5111DW1T1G Series | 3000/Tape&Reel, 10000/Tape&Reel | |||||
Notes:
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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