Hefei Purple Horn E-Commerce Co., Ltd.
| Output Voltage(VO(on)) | - |
| Input Resistor | 2.86kΩ |
| Resistor Ratio | - |
| Collector - Emitter Voltage VCEO | 50V |
| Description | Pre-Biased Bipolar Transistor (BJT) 50V 100mA 187mW Surface Mount SOT-363 |
| Mfr. Part # | LMUN5335DW1T1G |
| Package | SOT-363 |
| Model Number | LMUN5335DW1T1G |
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Product Specification
| Output Voltage(VO(on)) | - | Input Resistor | 2.86kΩ |
| Resistor Ratio | - | Collector - Emitter Voltage VCEO | 50V |
| Description | Pre-Biased Bipolar Transistor (BJT) 50V 100mA 187mW Surface Mount SOT-363 | Mfr. Part # | LMUN5335DW1T1G |
| Package | SOT-363 | Model Number | LMUN5335DW1T1G |
The LMUN5311DW1T1G series offers Dual Bias Resistor Transistors (BRTs) in a SOT-363/SC-88 package, designed for low power surface mount applications where board space is limited. Each BRT integrates a single transistor with a monolithic bias network, comprising a series base resistor and a base-emitter resistor. This integration eliminates the need for external components, simplifying circuit design, reducing board space, and lowering component count. The series features both NPN and PNP silicon transistors with a monolithic bias resistor network, ideal for replacing discrete devices and their associated bias networks.
| Model | Package | R1 (k) | R2 (k) | Shipping | Device Marking | |
|---|---|---|---|---|---|---|
| LMUN5311DW1T1G | SOT-363 | 11 | 10 | 3000/Tape&Reel | 11 | |
| LMUN5311DW1T3G | SOT-363 | 11 | 10 | 10000/Tape&Reel | 11 | |
| LMUN5312DW1T1G | SOT-363 | 12 | 22 | 3000/Tape&Reel | 12 | |
| LMUN5312DW1T3G | SOT-363 | 12 | 22 | 10000/Tape&Reel | 12 | |
| LMUN5313DW1T1G | SOT-363 | 13 | 47 | 3000/Tape&Reel | 13 | |
| LMUN5313DW1T3G | SOT-363 | 13 | 47 | 10000/Tape&Reel | 13 | |
| LMUN5314DW1T1G | SOT-363 | 14 | 10 | 47 | 3000/Tape&Reel | 14 |
| LMUN5314DW1T3G | SOT-363 | 14 | 10 | 47 | 10000/Tape&Reel | 14 |
| LMUN5315DW1T1G | SOT-363 | 15 | 10 | 3000/Tape&Reel | 15 | |
| LMUN5315DW1T3G | SOT-363 | 15 | 10 | 10000/Tape&Reel | 15 | |
| LMUN5316DW1T1G | SOT-363 | 16 | 4.7 | 3000/Tape&Reel | 16 | |
| LMUN5316DW1T3G | SOT-363 | 16 | 4.7 | 10000/Tape&Reel | 16 | |
| LMUN5330DW1T1G | SOT-363 | 30 | 1 | 1 | 3000/Tape&Reel | 30 |
| LMUN5330DW1T3G | SOT-363 | 30 | 1 | 1 | 10000/Tape&Reel | 30 |
| LMUN5331DW1T1G | SOT-363 | 31 | 2.2 | 2.2 | 3000/Tape&Reel | 31 |
| LMUN5331DW1T3G | SOT-363 | 31 | 2.2 | 2.2 | 10000/Tape&Reel | 31 |
| LMUN5332DW1T1G | SOT-363 | 32 | 4.7 | 4.7 | 3000/Tape&Reel | 32 |
| LMUN5332DW1T3G | SOT-363 | 32 | 4.7 | 4.7 | 10000/Tape&Reel | 32 |
| LMUN5333DW1T1G | SOT-363 | 33 | 4.7 | 47 | 3000/Tape&Reel | 33 |
| LMUN5333DW1T3G | SOT-363 | 33 | 4.7 | 47 | 10000/Tape&Reel | 33 |
| LMUN5334DW1T1G | SOT-363 | 34 | 22 | 47 | 3000/Tape&Reel | 34 |
| LMUN5334DW1T3G | SOT-363 | 34 | 22 | 47 | 10000/Tape&Reel | 34 |
| LMUN5335DW1T1G | SOT-363 | 35 | 2.2 | 47 | 3000/Tape&Reel | 35 |
| LMUN5335DW1T3G | SOT-363 | 35 | 2.2 | 47 | 10000/Tape&Reel | 35 |
| Characteristic | Symbol | Value | Unit | Notes |
|---|---|---|---|---|
| Collector-Base Voltage | VCBO | 50 | Vdc | Common for Q1 and Q2 |
| Collector-Emitter Voltage | VCEO | 50 | Vdc | Common for Q1 and Q2 |
| Collector Current | IC | 100 | mAdc | Common for Q1 and Q2 |
| Total Device Dissipation (One Junction Heated) | PD | 187 | mW | TA= 25C, Note 1 |
| Derate above 25C (One Junction Heated) | 2.0 | mW/C | Note 1 | |
| Thermal Resistance Junction-to-Ambient (One Junction Heated) | RJA | 670 | C/W | Note 1 |
| Total Device Dissipation (Both Junctions Heated) | PD | 250 | mW | TA= 25C, Note 1 |
| Derate above 25C (Both Junctions Heated) | 2.0 | mW/C | Note 1 | |
| Thermal Resistance Junction-to-Ambient (Both Junctions Heated) | RJA | 493 | C/W | Note 1 |
| Thermal Resistance Junction-to-Lead | RJL | 188 | C/W | Note 1 |
| Junction and Storage Temperature | TJ, Tstg | -55 to +150 | C | |
| Collector-Base Cutoff Current | ICBO | 100 | nAdc | VCB= 50 V, IE= 0 |
| Collector-Emitter Cutoff Current | ICEO | 500 | nAdc | VCE= 50 V, IB= 0 |
| Collector-Base Breakdown Voltage | V(BR)CBO | 50 | Vdc | IC= 10 A, IE= 0 |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 50 | Vdc | Note 3, IC= 2.0 mA, IB= 0 |
Notes:
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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