| Output Voltage(VO(on)) | 300mV |
| Input Resistor | 2.2kΩ |
| Resistor Ratio | 4.5 |
| Collector - Emitter Voltage VCEO | 50V |
| Description | Pre-Biased Bipolar Transistor (BJT) 50V 500mA 200mW Surface Mount SOT-23 |
| Mfr. Part # | LDTB123YLT1G |
| Package | SOT-23 |
| Model Number | LDTB123YLT1G |
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Product Specification
| Output Voltage(VO(on)) | 300mV | Input Resistor | 2.2kΩ |
| Resistor Ratio | 4.5 | Collector - Emitter Voltage VCEO | 50V |
| Description | Pre-Biased Bipolar Transistor (BJT) 50V 500mA 200mW Surface Mount SOT-23 | Mfr. Part # | LDTB123YLT1G |
| Package | SOT-23 | Model Number | LDTB123YLT1G |
The LDTB123YLT1G is a PNP Silicon Surface Mount Transistor featuring a monolithic bias resistor network. This integrated design simplifies circuit configuration by eliminating the need for external input resistors, making device design easier. The built-in thin-film resistors offer positive input biasing and minimize parasitic effects. This transistor is suitable for inverter, interface, and driver applications.
| Model | Device Marking | R1 (K) | R2 (K) | Package | Shipping |
|---|---|---|---|---|---|
| LDTB123YLT1G | F52 | 2.2 | 10 | SOT-23 | 3000/Tape & Reel |
| LDTB123YLT3G | F52 | 2.2 | 10 | SOT-23 | 10000/Tape & Reel |
| S-LDTB123YLT1G | F52 | 2.2 | 10 | SOT-23 | 3000/Tape & Reel |
| S-LDTB123YLT3G | F52 | 2.2 | 10 | SOT-23 | 10000/Tape & Reel |
| Parameter | Symbol | Unit | Conditions | Min. | Typ. | Max. |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Ta=25C) | ||||||
| Supply voltage | VCC | V | -50 | - | - | |
| Input voltage | VIN | V | -12 to +5 | - | - | |
| Output current | IC | mA | -500 | - | - | |
| Power dissipation | PD | mW | - | 200 | - | |
| Junction temperature | Tj | C | -55 | - | +150 | |
| Storage temperature | Tstg | C | -55 | - | +150 | |
| Electrical Characteristics (Ta=25C) | ||||||
| Input voltage (OFF) | VI(off) | V | VCC= 5V, IO= 100A | - | - | -0.1 |
| Input voltage (ON) | VI(on) | V | VO= 0.3V, IO= 20mA | -2 | - | - |
| Output voltage (ON) | VO(on) | V | IO/II= 50mA/2.5mA | - | - | -0.3 |
| Input current | II | A | VI= 5V | - | - | -0.5 |
| Output current | IO | mA | VCC= 50V, VI= 0V | - | - | -3.0 |
| Input resistance | R1 | k | VO= 5V, IO= 50mA | 2.2 | - | - |
| DC current gain | GI | - | VCE= 10V, IE= 50mA, f= 100MHz | 56 | - | 200 |
| Resistance ratio | R2/R1 | - | 3.6 | - | 5.5 | |
| Transition frequency | fT | MHz | - | - | 200 | |
| Transition frequency of the device | MHz | - | - | 200 | ||
| Dimension | Unit | Min | Max |
|---|---|---|---|
| A | mm | 2.80 | 3.04 |
| B | mm | 1.20 | 1.40 |
| C | mm | 0.89 | 1.11 |
| D | mm | 0.37 | 0.50 |
| G | mm | 1.78 | 2.04 |
| H | mm | 0.013 | 0.100 |
| J | mm | 0.085 | 0.177 |
| K | mm | 0.35 | 0.69 |
| L | mm | 0.89 | 1.02 |
| S | mm | 2.10 | 2.64 |
| V | mm | 0.45 | 0.60 |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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