Hefei Purple Horn E-Commerce Co., Ltd.
| Output Voltage(VO(on)) | 200mV |
| Input Resistor | 10kΩ |
| Resistor Ratio | 0.21 |
| Collector - Emitter Voltage VCEO | 50V |
| Description | Pre-Biased Bipolar Transistor (BJT) 50V 100mA 187mW Surface Mount SOT-363 |
| Mfr. Part # | LMUN5314DW1T1G |
| Package | SOT-363 |
| Model Number | LMUN5314DW1T1G |
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Product Specification
| Output Voltage(VO(on)) | 200mV | Input Resistor | 10kΩ |
| Resistor Ratio | 0.21 | Collector - Emitter Voltage VCEO | 50V |
| Description | Pre-Biased Bipolar Transistor (BJT) 50V 100mA 187mW Surface Mount SOT-363 | Mfr. Part # | LMUN5314DW1T1G |
| Package | SOT-363 | Model Number | LMUN5314DW1T1G |
The LMUN5311DW1T1G Series features Dual Bias Resistor Transistors (BRT) in a SOT-363/SC-88 package, designed for low power surface mount applications where board space is limited. Each BRT integrates a single transistor with a monolithic bias network, comprising a series base resistor and a base-emitter resistor, to replace discrete components and their external bias networks. This integration simplifies circuit design, reduces board space, and lowers component count. The series offers both NPN and PNP silicon surface mount transistors with a monolithic bias resistor network.
| Model | Package | R1 (k) | R2 (k) | Shipping | ||
|---|---|---|---|---|---|---|
| LMUN5311DW1T1G | SOT-363 | 11 | 10 | 3000/Tape&Reel | ||
| LMUN5311DW1T3G | SOT-363 | 11 | 10 | 10000/Tape&Reel | ||
| LMUN5312DW1T1G | SOT-363 | 12 | 22 | 3000/Tape&Reel | ||
| LMUN5312DW1T3G | SOT-363 | 12 | 22 | 10000/Tape&Reel | ||
| LMUN5313DW1T1G | SOT-363 | 13 | 47 | 3000/Tape&Reel | ||
| LMUN5313DW1T3G | SOT-363 | 13 | 47 | 10000/Tape&Reel | ||
| LMUN5314DW1T1G | SOT-363 | 14 | 10 | 3000/Tape&Reel | ||
| LMUN5314DW1T3G | SOT-363 | 14 | 10 | 10000/Tape&Reel | ||
| LMUN5315DW1T1G | SOT-363 | 15 | 10 | 3000/Tape&Reel | ||
| LMUN5315DW1T3G | SOT-363 | 15 | 10 | 10000/Tape&Reel | ||
| LMUN5316DW1T1G | SOT-363 | 16 | 4.7 | 3000/Tape&Reel | ||
| LMUN5316DW1T3G | SOT-363 | 16 | 4.7 | 10000/Tape&Reel | ||
| LMUN5330DW1T1G | SOT-363 | 30 | 1 | 3000/Tape&Reel | ||
| LMUN5330DW1T3G | SOT-363 | 30 | 1 | 10000/Tape&Reel | ||
| LMUN5331DW1T1G | SOT-363 | 31 | 2.2 | 3000/Tape&Reel | ||
| LMUN5331DW1T3G | SOT-363 | 31 | 2.2 | 10000/Tape&Reel | ||
| LMUN5332DW1T1G | SOT-363 | 32 | 4.7 | 3000/Tape&Reel | ||
| LMUN5332DW1T3G | SOT-363 | 32 | 4.7 | 10000/Tape&Reel | ||
| LMUN5333DW1T1G | SOT-363 | 33 | 4.7 | 3000/Tape&Reel | ||
| LMUN5333DW1T3G | SOT-363 | 33 | 4.7 | 10000/Tape&Reel | ||
| LMUN5334DW1T1G | SOT-363 | 34 | 22 | 3000/Tape&Reel | ||
| LMUN5334DW1T3G | SOT-363 | 34 | 22 | 10000/Tape&Reel | ||
| LMUN5335DW1T1G | SOT-363 | 35 | 2.2 | 3000/Tape&Reel | ||
| LMUN5335DW1T3G | SOT-363 | 35 | 2.2 | 10000/Tape&Reel | ||
| Maximum Ratings (TA = 25C unless otherwise noted) | ||||||
| Rating | Symbol | Value | Unit | Notes | ||
| Collector-Base Voltage | VCBO | 50 | Vdc | Common for Q1 and Q2 | ||
| Collector-Emitter Voltage | VCEO | 50 | Vdc | Common for Q1 and Q2 | ||
| Collector Current | IC | 100 | mAdc | Common for Q1 and Q2 | ||
| Thermal Characteristics (TA = 25C unless otherwise noted) | ||||||
| Characteristic | Symbol | Max | Unit | Notes | ||
| Total Device Dissipation (One Junction Heated) | PD | 187 | mW | Note 1 | ||
| Derate above 25C (One Junction Heated) | 1.5 | mW/C | Note 1 | |||
| Thermal Resistance, Junction-to-Ambient (One Junction Heated) | RJA | 670 | C/W | Note 1 | ||
| Total Device Dissipation (Both Junctions Heated) | PD | 250 | mW | Note 1 | ||
| Derate above 25C (Both Junctions Heated) | 2.0 | mW/C | Note 1 | |||
| Thermal Resistance, Junction-to-Ambient (Both Junctions Heated) | RJA | 493 | C/W | Note 1 | ||
| Thermal Resistance, Junction-to-Lead (Both Junctions Heated) | RJL | 188 | C/W | Note 1 | ||
| Junction and Storage Temperature | TJ, Tstg | -55 to +150 | C | |||
| Electrical Characteristics (TA = 25C unless otherwise noted) | ||||||
| Characteristic | Symbol | Min | Typ | Max | Unit | Notes |
| Collector-Base Breakdown Voltage | V(BR)CBO | 50 | - | - | Vdc | IC = 10 A, IE = 0 |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 50 | - | - | Vdc | Note 3, IC = 2.0 mA, IB = 0 |
| Collector-Base Cutoff Current | ICBO | - | - | 100 | nAdc | VCB = 50 V, IE = 0 |
| Collector-Emitter Cutoff Current | ICEO | - | - | 500 | nAdc | VCE = 50 V, IB = 0 |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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