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Hefei Purple Horn E-Commerce Co., Ltd.

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  3. SC88 SOT363 Package PNP Silicon Dual Bias Resistor Transistor LRC LMUN5114DW1T1G
China SC88 SOT363 Package PNP Silicon Dual Bias Resistor Transistor LRC LMUN5114DW1T1G
China SC88 SOT363 Package PNP Silicon Dual Bias Resistor Transistor LRC LMUN5114DW1T1G

  1. China SC88 SOT363 Package PNP Silicon Dual Bias Resistor Transistor LRC LMUN5114DW1T1G

SC88 SOT363 Package PNP Silicon Dual Bias Resistor Transistor LRC LMUN5114DW1T1G

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Output Voltage(VO(on)) 200mV
Input Resistor 10kΩ
Resistor Ratio 0.21
Collector - Emitter Voltage VCEO 50V
Description Pre-Biased Bipolar Transistor (BJT) 50V 100mA 256mW Surface Mount SOT-363
Mfr. Part # LMUN5114DW1T1G
Package SOT-363
Model Number LMUN5114DW1T1G

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  1. Product Details
  2. Company Details

Product Specification

Output Voltage(VO(on)) 200mV Input Resistor 10kΩ
Resistor Ratio 0.21 Collector - Emitter Voltage VCEO 50V
Description Pre-Biased Bipolar Transistor (BJT) 50V 100mA 256mW Surface Mount SOT-363 Mfr. Part # LMUN5114DW1T1G
Package SOT-363 Model Number LMUN5114DW1T1G

Product Overview

The LMUN5111DW1T1G Series represents a line of PNP Silicon Dual Bias Resistor Transistors housed in an SC-88/SOT-363 package. These surface-mount transistors integrate a monolithic bias resistor network, comprising a series base resistor and a base-emitter resistor, into a single device. This integration simplifies circuit design, reduces board space, and lowers component count, making them ideal for low-power applications where space is a premium. The series is available in 8 mm, 7-inch/3000 unit tape and reel packaging.

Product Attributes

  • Brand: LESHAN RADIO COMPANY, LTD.
  • Package Type: SC-88/SOT-363
  • Material: Silicon
  • Transistor Type: PNP
  • Certifications: AEC-Q101 Qualified (for S-Prefix variants)
  • Compliance: RoHS

Technical Specifications

Characteristic Symbol Model Min Typ Max Unit Notes
Maximum Ratings (TA = 25C unless otherwise noted, common for Q1 and Q2)
Collector-Base Voltage VCBO -50 Vdc
Collector-Emitter Voltage VCEO -50 Vdc
Collector Current IC -100 mAdc
Thermal Characteristics
Total Device Dissipation (One Junction Heated) PD 187 mW Note 1
Thermal Resistance (Junction-to-Ambient, One Junction Heated) RJA 670 C/W Note 1
Total Device Dissipation (Both Junctions Heated) PD 250 mW Note 1
Thermal Resistance (Junction-to-Ambient, Both Junctions Heated) RJA 493 C/W Note 1
Junction and Storage Temperature TJ, Tstg -55 +150 C
Electrical Characteristics (TA = 25C unless otherwise noted, common for Q1 and Q2)
Collector-Base Cutoff Current ICBO -100 nAdc VCB = -50 V, IE = 0
Collector-Emitter Cutoff Current ICEO -500 nAdc VCE = -50 V, IB = 0
Emitter-Base Cutoff Current IEBO LMUN5111DW1T1G -0.5 mAdc VEB = -6.0 V, IC = 0
Emitter-Base Cutoff Current IEBO LMUN5112DW1T1G -0.2 mAdc VEB = -6.0 V, IC = 0
Emitter-Base Cutoff Current IEBO LMUN5113DW1T1G -0.1 mAdc VEB = -6.0 V, IC = 0
Emitter-Base Cutoff Current IEBO LMUN5114DW1T1G -0.2 mAdc VEB = -6.0 V, IC = 0
Emitter-Base Cutoff Current IEBO LMUN5115DW1T1G -0.9 mAdc VEB = -6.0 V, IC = 0
Emitter-Base Cutoff Current IEBO LMUN5116DW1T1G -1.9 mAdc VEB = -6.0 V, IC = 0
Emitter-Base Cutoff Current IEBO LMUN5130DW1T1G -4.3 mAdc VEB = -6.0 V, IC = 0
Emitter-Base Cutoff Current IEBO LMUN5131DW1T1G -2.3 mAdc VEB = -6.0 V, IC = 0
Emitter-Base Cutoff Current IEBO LMUN5132DW1T1G -1.5 mAdc VEB = -6.0 V, IC = 0
Emitter-Base Cutoff Current IEBO LMUN5133DW1T1G -0.18 mAdc VEB = -6.0 V, IC = 0
Emitter-Base Cutoff Current IEBO LMUN5134DW1T1G -0.13 mAdc VEB = -6.0 V, IC = 0
Emitter-Base Cutoff Current IEBO LMUN5135DW1T1G -0.2 mAdc VEB = -6.0 V, IC = 0
Emitter-Base Cutoff Current IEBO LMUN5136DW1T1G -0.05 mAdc VEB = -6.0 V, IC = 0
Emitter-Base Cutoff Current IEBO LMUN5137DW1T1G -0.13 mAdc VEB = -6.0 V, IC = 0
Collector-Base Breakdown Voltage V(BR)CBO -50 Vdc IC = -10 µA, IE = 0
Collector-Emitter Breakdown Voltage V(BR)CEO -50 Vdc Note 3, IC = -2.0 mA, IB = 0
Collector-Emitter Saturation Voltage VCE(sat) LMUN5111DW1T1G -0.25 Vdc IC = -10 mA, IB = -0.3 mA
Collector-Emitter Saturation Voltage VCE(sat) LMUN5112DW1T1G -0.25 Vdc IC = -10 mA, IB = -0.3 mA
Collector-Emitter Saturation Voltage VCE(sat) LMUN5113DW1T1G -0.25 Vdc IC = -10 mA, IB = -0.3 mA
Collector-Emitter Saturation Voltage VCE(sat) LMUN5114DW1T1G -0.25 Vdc IC = -10 mA, IB = -0.3 mA
Collector-Emitter Saturation Voltage VCE(sat) LMUN5135DW1T1G -0.25 Vdc IC = -10 mA, IB = -0.3 mA
Collector-Emitter Saturation Voltage VCE(sat) LMUN5136DW1T1G -0.25 Vdc IC = -10 mA, IB = -0.3 mA
Collector-Emitter Saturation Voltage VCE(sat) LMUN5130DW1T1G -0.25 Vdc IC = -10 mA, IB = -5 mA
Collector-Emitter Saturation Voltage VCE(sat) LMUN5131DW1T1G -0.25 Vdc IC = -10 mA, IB = -5 mA
Collector-Emitter Saturation Voltage VCE(sat) LMUN5137DW1T1G -0.25 Vdc IC = -10 mA, IB = -5 mA
Collector-Emitter Saturation Voltage VCE(sat) LMUN5115DW1T1G -0.25 Vdc IC = -10 mA, IB = -1 mA
Collector-Emitter Saturation Voltage VCE(sat) LMUN5116DW1T1G -0.25 Vdc IC = -10 mA, IB = -1 mA
Collector-Emitter Saturation Voltage VCE(sat) LMUN5132DW1T1G -0.25 Vdc IC = -10 mA, IB = -1 mA
Collector-Emitter Saturation Voltage VCE(sat) LMUN5133DW1T1G -0.25 Vdc IC = -10 mA, IB = -1 mA
Collector-Emitter Saturation Voltage VCE(sat) LMUN5134DW1T1G -0.25 Vdc IC = -10 mA, IB = -1 mA
DC Current Gain hFE LMUN5111DW1T1G 35 VCE = -10 V, IC = -5.0 mA
DC Current Gain hFE LMUN5112DW1T1G 60 VCE = -10 V, IC = -5.0 mA
DC Current Gain hFE LMUN5115DW1T1G 80 VCE = -10 V, IC = -5.0 mA
DC Current Gain hFE LMUN5116DW1T1G 80 VCE = -10 V, IC = -5.0 mA
DC Current Gain hFE LMUN5130DW1T1G 160 VCE = -10 V, IC = -5.0 mA
DC Current Gain hFE LMUN5131DW1T1G 160 VCE = -10 V, IC = -5.0 mA
DC Current Gain hFE LMUN5132DW1T1G 3.0 VCE = -10 V, IC = -5.0 mA
DC Current Gain hFE LMUN5133DW1T1G 8.0 VCE = -10 V, IC = -5.0 mA
DC Current Gain hFE LMUN5134DW1T1G 15 VCE = -10 V, IC = -5.0 mA
DC Current Gain hFE LMUN5137DW1T1G 80 VCE = -10 V, IC = -5.0 mA
Output Voltage (on) VOL LMUN5111DW1T1G -0.2 Vdc VCC = -5.0 V, VB = -2.5 V, RL = 1.0 kΩ
Output Voltage (on) VOL LMUN5112DW1T1G -0.2 Vdc VCC = -5.0 V, VB = -2.5 V, RL = 1.0 kΩ
Output Voltage (on) VOL LMUN5135DW1T1G -0.2 Vdc VCC = -5.0 V, VB = -2.5 V, RL = 1.0 kΩ
Output Voltage (on) VOL LMUN5113DW1T1G -0.2 Vdc VCC = -5.0 V, VB = -3.5 V, RL = 1.0 kΩ
Output Voltage (on) VOL LMUN5136DW1T1G -0.2 Vdc VCC = -5.0 V, VB = -4.0 V, RL = 1.0 kΩ
Output Voltage (on) VOL LMUN5137DW1T1G -0.2 Vdc VCC = -5.0 V, VB = -4.0 V, RL = 1.0 kΩ
Output Voltage (off) VOH LMUN5111DW1T1G -4.9 Vdc VCC = -5.0 V, VB = -0.5 V, RL = 1.0 kΩ
Output Voltage (off) VOH LMUN5113DW1T1G -4.9 Vdc VCC = -5.0 V, VB = -0.5 V, RL = 1.0 kΩ
Output Voltage (off) VOH LMUN5133DW1T1G -4.9 Vdc VCC = -5.0 V, VB = -0.5 V, RL = 1.0 kΩ
Output Voltage (off) VOH LMUN5130DW1T1G -4.9 Vdc VCC = -5.0 V, VB = -0.25 V, RL = 1.0 kΩ
Output Voltage (off) VOH LMUN5115DW1T1G -4.9 Vdc VCC = -5.0 V, VB = -0.25 V, RL = 1.0 kΩ
Output Voltage (off) VOH LMUN5132DW1T1G -4.9 Vdc VCC = -5.0 V, VB = -0.25 V, RL = 1.0 kΩ
Output Voltage (off) VOH LMUN5137DW1T1G -4.9 Vdc VCC = -5.0 V, VB = -0.25 V, RL = 1.0 kΩ
Input Resistor (R1) R1 LMUN5111DW1T1G 7.0 10 kΩ
Input Resistor (R1) R1 LMUN5112DW1T1G 15.4 22 kΩ
Input Resistor (R1) R1 LMUN5113DW1T1G 32.9 47 kΩ
Input Resistor (R1) R1 LMUN5114DW1T1G 7.0 10 kΩ
Input Resistor (R1) R1 LMUN5115DW1T1G 7.0 10 kΩ
Input Resistor (R1) R1 LMUN5116DW1T1G 3.3 4.7 kΩ
Input Resistor (R1) R1 LMUN5130DW1T1G 0.7 1.0 kΩ
Input Resistor (R1) R1 LMUN5131DW1T1G 1.5 2.2 kΩ
Input Resistor (R1) R1 LMUN5132DW1T1G 3.3 4.7 kΩ
Input Resistor (R1) R1 LMUN5133DW1T1G 3.3 4.7 kΩ
Input Resistor (R1) R1 LMUN5134DW1T1G 15.4 22 kΩ
Input Resistor (R1) R1 LMUN5135DW1T1G 1.54 2.2 kΩ
Input Resistor (R1) R1 LMUN5136DW1T1G 70 100 kΩ
Input Resistor (R1) R1 LMUN5137DW1T1G 32.9 47 kΩ
Resistor Ratio (R1/R2) R1/R2 LMUN5111DW1T1G 0.8 1.0
Resistor Ratio (R1/R2) R1/R2 LMUN5112DW1T1G 0.8 1.0
Resistor Ratio (R1/R2) R1/R2 LMUN5113DW1T1G 0.8 1.0
Resistor Ratio (R1/R2) R1/R2 LMUN5114DW1T1G 0.17 1.0
Resistor Ratio (R1/R2) R1/R2 LMUN5115DW1T1G 0.8 1.0
Resistor Ratio (R1/R2) R1/R2 LMUN5116DW1T1G 0.8 1.0
Resistor Ratio (R1/R2) R1/R2 LMUN5130DW1T1G 0.055 0.12
Resistor Ratio (R1/R2) R1/R2 LMUN5131DW1T1G 0.38 0.47
Resistor Ratio (R1/R2) R1/R2 LMUN5132DW1T1G 0.038 0.047
Resistor Ratio (R1/R2) R1/R2 LMUN5133DW1T1G 0.8 1.2
Resistor Ratio (R1/R2) R1/R2 LMUN5134DW1T1G 1.7 2.15
Resistor Ratio (R1/R2) R1/R2 LMUN5135DW1T1G 1.0 1.2
Resistor Ratio (R1/R2) R1/R2 LMUN5136DW1T1G 1.0 1.2
Resistor Ratio (R1/R2) R1/R2 LMUN5137DW1T1G 0.185 0.56
Shipping LMUN5111DW1T1G Series 3000/Tape & Reel
Shipping LMUN5111DW1T3G Series 10000/Tape & Reel

Notes:

  • 1. FR-4 @ Minimum Pad
  • 2. FR-4 @ 1.0 x 1.0 inch Pad
  • 3. New resistor combinations. Updated curves to follow in subsequent data sheets.
  • 4. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
  • 5. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%

Dimensions (SC-88/SOT-363):

Dimension Min Max Min Max
Inches Inches Millimeters Millimeters
A 0.071 0.087 1.80 2.20
B 0.045 0.053 1.15 1.35
C 0.031 0.043 0.80 1.10
D 0.004 0.012 0.10 0.30
G 0.026 BSC 0.65 BSC
H --- 0.004 --- 0.10
J 0.004 0.010 0.10 0.25
K 0.004 0.012 0.10 0.30
N 0.008 REF 0.20 REF
S 0.079 0.087 2.00 2.20

Pin Description:

  • 1. EMITTER 2
  • 2. BASE 2
  • 3. COLLECTOR 1
  • 4. EMITTER 1
  • 5. BASE 1
  • 6. COLLECTOR 2

2108231730_LRC-LMUN5114DW1T1G_C2887402.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory

  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification：

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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