| Peak Pulse Current (Ipp) | 4A@8/20us |
| Peak Pulse Power Dissipation (Ppp) | 50W@8/20us |
| Clamping Voltage | 13V |
| Junction Capacitance | 0.8pF |
| Polarity | Unidirectional |
| Reverse Stand-Off Voltage (Vrwm) | 5V |
| Description | 4A@8/20us 50W@8/20us 13V Unidirectional 5V SOT-323 Single, Pre-Biased Bipolar Transistors RoHS |
| Mfr. Part # | S-LESD32L05T1G |
| Package | SOT-323 |
| Model Number | S-LESD32L05T1G |
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Product Specification
| Peak Pulse Current (Ipp) | 4A@8/20us | Peak Pulse Power Dissipation (Ppp) | 50W@8/20us |
| Clamping Voltage | 13V | Junction Capacitance | 0.8pF |
| Polarity | Unidirectional | Reverse Stand-Off Voltage (Vrwm) | 5V |
| Description | 4A@8/20us 50W@8/20us 13V Unidirectional 5V SOT-323 Single, Pre-Biased Bipolar Transistors RoHS | Mfr. Part # | S-LESD32L05T1G |
| Package | SOT-323 | Model Number | S-LESD32L05T1G |
The S-LESD32L05T1G is an ESD Protection Diode designed to offer low capacitance and robust ESD protection. It complies with stringent IEC 61000-4-2 standards for both air and contact discharge. This device is suitable for automotive and other applications requiring unique site and control change requirements, being AEC-Q101 qualified and PPAP capable. It also adheres to RoHS requirements and is Halogen Free.
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| IEC 61000-4-2 (ESD) | ||||||
| Air discharge | ±30 | kV | ||||
| Contact discharge | ±30 | kV | ||||
| Maximum Ratings (Ta = 25ºC) | ||||||
| Peak pulse power @ 8/20 µs | PPP | 50 | W | |||
| Peak pulse current @ 8/20 µs | IPP | 4 | A | |||
| Storage Temperature Range | Tstg | -55 | +150 | ºC | ||
| Junction Temperature Range | TJ | -55 | +150 | ºC | ||
| Electrical Characteristics (Ta = 25ºC) | ||||||
| Working Peak Reverse Voltage | VRWM | 5.5 | V | |||
| Breakdown Voltage | VBR | IT = 1mA | 8.5 | V | ||
| Maximum Reverse Leakage Current | IR | VRWM = 5V | 1 | µA | ||
| Forward Voltage | VF | IF = 10mA | 1.2 | V | ||
| Clamping Voltage | VC1 | IPP = 4A, tp=8/20µs | 13 | V | ||
| Clamping Voltage | VC2 | IPP = 8A, tp=100ns | 11 | V | ||
| Clamping Voltage | VC2 | IPP = 16A, tp=100ns | 13 | V | ||
| Junction Capacitance | Cj | VR = 0V, f = 1MHz | 15 | pF | ||
| Dynamic Resistance | RDYN | IPP = 4A, tp=100ns | 0.4 | Ω | ||
| Device Marking and Ordering Information | ||||||
| Device Parameter | Symbol | Marking | Shipping | Model | ||
| ESD Protection Diode | 5E | 3000/Tape&Reel | S-LESD32L05T1G | |||
| Outline and Dimensions | ||||||
| DIM | MIN | NOR | MAX | |||
| A | 0.80 | 0.95 | 1.00 | |||
| A1 | 0.00 | 0.05 | 0.10 | |||
| A2 | 0.70 | 0.90 | 1.10 | |||
| b | 0.30 | 0.35 | 0.40 | |||
| c | 0.10 | 0.15 | 0.25 | |||
| D | 1.80 | 2.05 | 2.20 | |||
| E | 1.15 | 1.30 | 1.35 | |||
| e | 1.20 | 1.30 | 1.40 | |||
| e1 | 0.65 | BSC | ||||
| L | 0.20 | 0.35 | 0.56 | |||
| Soldering Footprint | ||||||
| DIM | MIN | X | Y | |||
| A | 1.90 | |||||
| B | 0.65 | |||||
| C | 0.65 | |||||
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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