| Output Voltage(VO(on)) | 300mV |
| Input Resistor | 10kΩ |
| Resistor Ratio | 1 |
| Collector - Emitter Voltage VCEO | 50V |
| Description | Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased Transistor 50V 500mA 200mW Surface Mount SOT-23 |
| Mfr. Part # | LDTD114ELT1G |
| Package | SOT-23 |
| Model Number | LDTD114ELT1G |
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Product Specification
| Output Voltage(VO(on)) | 300mV | Input Resistor | 10kΩ |
| Resistor Ratio | 1 | Collector - Emitter Voltage VCEO | 50V |
| Description | Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased Transistor 50V 500mA 200mW Surface Mount SOT-23 | Mfr. Part # | LDTD114ELT1G |
| Package | SOT-23 | Model Number | LDTD114ELT1G |
The LDTD114ELT1G is a silicon NPN surface mount transistor featuring a monolithic bias resistor network. This integrated design eliminates the need for external input resistors, simplifying circuit configuration for inverter applications. The built-in thin-film resistors offer complete isolation and minimize parasitic effects, enabling straightforward on/off condition settings for device design. Ideal for inverter, interface, and driver applications.
| Model | Device Marking | R1 (K) | R2 (K) | Shipping Quantity | Package |
|---|---|---|---|---|---|
| LDTD114ELT1G | CA | 10 | 10 | 3000/Tape & Reel | SOT-23 |
| LDTD114ELT3G | CA | 10 | 10 | 10000/Tape & Reel | SOT-23 |
| S-LDTD114ELT1G | CA | 10 | 10 | 3000/Tape & Reel | SOT-23 |
| S-LDTD114ELT3G | CA | 10 | 10 | 10000/Tape & Reel | SOT-23 |
| Parameter | Symbol | Unit | Conditions | Min. | Typ. | Max. |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Ta=25C) | ||||||
| Supply voltage | VCC | V | 50 | |||
| Input voltage | VIN | V | 10 to +40 | |||
| Output current | IC | mA | 500 | |||
| Power dissipation | PD | mW | 200 | |||
| Junction temperature | Tj | C | 150 | |||
| Storage temperature | Tstg | C | 55 to +150 | |||
| Electrical Characteristics (Ta=25C) | ||||||
| Input voltage (off) | VI(off) | V | VCC= 5V, IO= 100A | 0.1 | ||
| Input voltage (on) | VI(on) | V | VO= 0.3V, IO= 10mA | 0.5 | ||
| Output voltage (on) | VO(on) | V | IO/II= 50mA/2.5mA | 0.3 | ||
| Input current | II | A | VI= 5V | 1 | ||
| Output current | IO | mA | VCC= 50V, VI=0V | 0.5 | ||
| Input resistance | R1 | k | VO= 5V, IO= 50mA | 7 | 10 | |
| DC current gain | GI | VCE=10V, IE= 50mA, f=100MHz | 56 | 200 | ||
| Resistance ratio | R2/R1 | 0.88 | 1 | 1.2 | ||
| Transition frequency | fT | MHz | 13 | |||
| *Characteristics of built-in transistor | ||||||
| Dimension | Symbol | Inches | Millimeters |
|---|---|---|---|
| A | A | 0.1102 - 0.1197 | 2.80 - 3.04 |
| B | B | 0.0472 - 0.0551 | 1.20 - 1.40 |
| C | C | 0.0350 - 0.0440 | 0.89 - 1.11 |
| D | D | 0.0150 - 0.0200 | 0.37 - 0.50 |
| G | G | 0.0701 - 0.0807 | 1.78 - 2.04 |
| H | H | 0.0005 - 0.0040 | 0.013 - 0.100 |
| J | J | 0.0034 - 0.0070 | 0.085 - 0.177 |
| K | K | 0.0140 - 0.0285 | 0.35 - 0.69 |
| L | L | 0.0350 - 0.0401 | 0.89 - 1.02 |
| S | S | 0.0830 - 0.1039 | 2.10 - 2.64 |
| V | V | 0.0177 - 0.0236 | 0.45 - 0.60 |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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