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China factory - Hefei Purple Horn E-Commerce Co., Ltd.

Hefei Purple Horn E-Commerce Co., Ltd.

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  3. Pb Free NPN Transistor LRC LDTC143ZM3T5G with Integrated Bias Resistor Network
China Pb Free NPN Transistor LRC LDTC143ZM3T5G with Integrated Bias Resistor Network
China Pb Free NPN Transistor LRC LDTC143ZM3T5G with Integrated Bias Resistor Network

  1. China Pb Free NPN Transistor LRC LDTC143ZM3T5G with Integrated Bias Resistor Network

Pb Free NPN Transistor LRC LDTC143ZM3T5G with Integrated Bias Resistor Network

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Output Voltage(VO(on)) -
Input Resistor 4.7kΩ
Resistor Ratio 10
Collector - Emitter Voltage VCEO 50V
Description Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased Transistor 50V 100mA 600mW Surface Mount SOT-723
Mfr. Part # LDTC143ZM3T5G
Package SOT-723
Model Number LDTC143ZM3T5G

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  1. Product Details
  2. Company Details

Product Specification

Output Voltage(VO(on)) - Input Resistor 4.7kΩ
Resistor Ratio 10 Collector - Emitter Voltage VCEO 50V
Description Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased Transistor 50V 100mA 600mW Surface Mount SOT-723 Mfr. Part # LDTC143ZM3T5G
Package SOT-723 Model Number LDTC143ZM3T5G

Product Overview

LESHAN RADIO COMPANY, LTD. presents a series of NPN Silicon Surface Mount Transistors with integrated monolithic bias resistor networks, known as Bias Resistor Transistors (BRTs). These devices are designed to replace a single transistor and its external bias resistor network, thereby simplifying circuit design, reducing component count, and saving board space. The BRTs are housed in the low-power SOT-723 package, suitable for surface mount applications. They are Pb-Free and AEC-Q101 Qualified and PPAP Capable, with an 'S-' prefix available for automotive and other applications requiring unique site and control change requirements. These transistors are ideal for various applications including level shifting, open collector inverters, and current sources.

Product Attributes

  • Brand: LESHAN RADIO COMPANY, LTD.
  • Material: Silicon
  • Package: SOT-723
  • Certifications: AEC-Q101 Qualified, PPAP Capable
  • Features: Pb-Free Devices

Technical Specifications

Model R1 (K) R2 (K) Collector-Base Voltage (VCBO) Collector-Emitter Voltage (VCEO) Collector Current (IC) Junction Temperature (TJ) Total Device Dissipation (PD) (mW) (Note 1) Total Device Dissipation (PD) (mW) (Note 2) Thermal Resistance Junction-to-Ambient (RJA) (C/W) (Note 1) Thermal Resistance Junction-to-Ambient (RJA) (C/W) (Note 2) Storage Temperature Range (Tstg) (C)
LDTC114EM3T5G 10 10 50 Vdc 50 Vdc 100 mAdc 150 C 260 600 480 205 55 to +150 C
LDTC124EM3T5G 22 22 260 600 480 205
LDTC144EM3T5G 47 47 260 600 480 205
LDTC114YM3T5G 10 260 600 480 205
LDTC114TM3T5G 10 2.2 260 600 480 205
LDTC143TM3T5G 4.7 4.7 260 600 480 205
LDTC123EM3T5G 2.2 4.7 260 600 480 205
LDTC143EM3T5G 4.7 47 260 600 480 205
LDTC143ZM3T5G 4.7 47 260 600 480 205
LDTC124XM3T5G 22 100 260 600 480 205
LDTC123JM3T5G 2.2 22 260 600 480 205
LDTC115EM3T5G 100 47 260 600 480 205
LDTC144WM3T5G 47 47 260 600 480 205
LDTC144TM3T5G 47 47 260 600 480 205
S-LDTC114EM3T5G 10 10 260 600 480 205
Characteristic Symbol Min Typ Max Unit Notes
CollectorBase Cutoff Current ICBO 100 nAdc (VCB = 50 V, IE = 0)
CollectorEmitter Cutoff Current ICEO 500 nAdc (VCE = 50 V, IB = 0)
EmitterBase Cutoff Current IEBO 0.5 (LDTC114EM3T5G)
0.2 (LDTC124EM3T5G)
0.1 (LDTC144EM3T5G)
0.2 (LDTC114YM3T5G)
0.9 (LDTC114TM3T5G)
1.9 (LDTC143TM3T5G)
2.3 (LDTC123EM3T5G)
1.5 (LDTC143EM3T5G)
0.18 (LDTC143ZM3T5G)
0.13 (LDTC124XM3T5G)
0.2 (LDTC123JM3T5G)
0.05 (LDTC115EM3T5G)
0.13 (LDTC144WM3T5G)
0.2 (LDTC144TM3T5G)		 mAdc (VEB = 6.0 V, IC = 0)
CollectorBase Breakdown Voltage V(BR)CBO 50 Vdc (IC = 10 A, IE = 0)
CollectorEmitter Breakdown Voltage V(BR)CEO 50 Vdc (Note 3) (IC = 2.0 mA, IB = 0)
DC Current Gain hFE 35 (LDTC114EM3T5G)
60 (LDTC124EM3T5G)
80 (LDTC144EM3T5G)
80 (LDTC114YM3T5G)
160 (LDTC114TM3T5G)
160 (LDTC143TM3T5G)
8.0 (LDTC123EM3T5G)
15 (LDTC143EM3T5G)
80 (LDTC143ZM3T5G)
80 (LDTC124XM3T5G)
80 (LDTC123JM3T5G)
80 (LDTC115EM3T5G)
80 (LDTC144WM3T5G)
160 (LDTC144TM3T5G)		 350 (LDTC114TM3T5G, LDTC143TM3T5G)
200 (LDTC123EM3T5G)
150 (LDTC143EM3T5G)
140 (LDTC143ZM3T5G)
350 (LDTC124XM3T5G)
140 (LDTC123JM3T5G)
350 (LDTC115EM3T5G)
140 (LDTC144WM3T5G)
350 (LDTC144TM3T5G)		 (Note 3) (VCE = 10 V, IC = 5.0 mA)
CollectorEmitter Saturation Voltage VCE(sat) 0.25 Vdc (IC = 10 mA, IB = 0.3 mA)
(IC = 10 mA, IB = 5 mA)
(IC = 10 mA, IB = 1 mA)
Output Voltage (on) VOL 0.2 Vdc (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k)
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k)
(VCC = 5.0 V, VB = 5.5 V, RL = 1.0 k)
(VCC = 5.0 V, VB = 4.0 V, RL = 1.0 k)
Output Voltage (off) VOH 4.9 Vdc (VCC = 5.0 V, IO= 100 A)
Input Resistor R1 7.0 (LDTC114EM3T5G)
15.4 (LDTC124EM3T5G)
32.9 (LDTC144EM3T5G)
7.0 (LDTC114YM3T5G)
7.0 (LDTC114TM3T5G)
3.3 (LDTC143TM3T5G)
1.5 (LDTC123EM3T5G)
3.3 (LDTC143EM3T5G)
3.3 (LDTC143ZM3T5G)
15.4 (LDTC124XM3T5G)
1.54 (LDTC123JM3T5G)
70 (LDTC115EM3T5G)
32.9 (LDTC144WM3T5G)
32.9 (LDTC144TM3T5G)		 10 (LDTC114EM3T5G)
22 (LDTC124EM3T5G)
47 (LDTC144EM3T5G)
10 (LDTC114YM3T5G)
10 (LDTC114TM3T5G)
4.7 (LDTC143TM3T5G)
2.2 (LDTC123EM3T5G)
4.7 (LDTC143EM3T5G)
4.7 (LDTC143ZM3T5G)
22 (LDTC124XM3T5G)
2.2 (LDTC123JM3T5G)
100 (LDTC115EM3T5G)
47 (LDTC144WM3T5G)
47 (LDTC144TM3T5G)		 13 (LDTC114EM3T5G)
28.6 (LDTC124EM3T5G)
61.1 (LDTC144EM3T5G)
13 (LDTC114YM3T5G)
13 (LDTC114TM3T5G)
6.1 (LDTC143TM3T5G)
2.9 (LDTC123EM3T5G)
6.1 (LDTC143EM3T5G)
6.1 (LDTC143ZM3T5G)
28.6 (LDTC124XM3T5G)
2.86 (LDTC123JM3T5G)
130 (LDTC115EM3T5G)
61.1 (LDTC144WM3T5G)
61.1 (LDTC144TM3T5G)		 k
Resistor Ratio R1/R2 0.8 (LDTC114EM3T5G)
0.17 (LDTC124EM3T5G)
0.8 (LDTC114YM3T5G)
0.055 (LDTC114TM3T5G)
0.38 (LDTC143TM3T5G)
0.038 (LDTC123EM3T5G)
1.7 (LDTC143EM3T5G)
1.0 (LDTC143ZM3T5G)
0.21 (LDTC124XM3T5G)
1.0 (LDTC123JM3T5G)
0.1 (LDTC144WM3T5G)
0.47 (LDTC144TM3T5G)		 2.1 (LDTC114EM3T5G)
1.2 (LDTC124EM3T5G)
2.6 (LDTC114YM3T5G)
1.2 (LDTC114TM3T5G)
0.56 (LDTC143TM3T5G)
0.185 (LDTC123EM3T5G)
2.1 (LDTC143EM3T5G)
1.2 (LDTC143ZM3T5G)
0.25 (LDTC124XM3T5G)
1.2 (LDTC123JM3T5G)
0.047 (LDTC144WM3T5G)
0.056 (LDTC144TM3T5G)
Input Voltage (off) VI(off) 0.5 V (VCC = 5.0 V, RL = 1.0 k)
Input Voltage (on) VI(on) 1.1 V (VCC = 5.0 V, RL = 1.0 k)

Notes:

  • Note 1: FR4 @ Minimum Pad
  • Note 2: FR4 @ 1.0 x 1.0 inch Pad
  • Note 3: Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%.

Packaging

  • Available in 8000 Unit Tape & Reel
  • SOT-723 Package can be Soldered using Wave or Reflow.

2304140030_LRC-LDTC143ZM3T5G_C559070.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory

  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification：

    Verified Supplier

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Get in touch with us

  • Reach Us
  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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