Hefei Purple Horn E-Commerce Co., Ltd.
| Output Voltage(VO(on)) | 300mV |
| Input Resistor | 61.1kΩ |
| Resistor Ratio | 1.2 |
| Number | - |
| Collector - Emitter Voltage VCEO | 50V |
| Description | Pre-Biased Bipolar Transistor (BJT) 50V 100mA 150mW Surface Mount SOT-353-5 |
| Mfr. Part # | UMG2NTR |
| Package | SOT-353-5 |
| Model Number | UMG2NTR |
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Product Specification
| Output Voltage(VO(on)) | 300mV | Input Resistor | 61.1kΩ |
| Resistor Ratio | 1.2 | Number | - |
| Collector - Emitter Voltage VCEO | 50V | Description | Pre-Biased Bipolar Transistor (BJT) 50V 100mA 150mW Surface Mount SOT-353-5 |
| Mfr. Part # | UMG2NTR | Package | SOT-353-5 |
| Model Number | UMG2NTR |
The EMG2, UMG2N, and FMG2A are dual digital transistors designed for emitter common configurations. These devices integrate two DTC144E chips within a single SOT-553 (EMT5), SOT-353 (UMT5), or SOT-25 (SMT5) package, offering significant reductions in mounting cost and board area. They are suitable for applications such as inverters, interfaces, and drivers.
| Model | Package | Package Size | Taping Code | Reel Size (mm) | Tape Width (mm) | Basic Ordering Unit (pcs) | Marking |
|---|---|---|---|---|---|---|---|
| EMG2 | SOT-553 (EMT5) | 1616 | T2R | 180 | 8 | 8000 | G2 |
| UMG2N | SOT-353 (UMT5) | 2021 | TR | 180 | 8 | 3000 | G2 |
| FMG2A | SOT-25 (SMT5) | 2928 | T148 | 180 | 8 | 3000 | G2 |
| Parameter | Symbol | Values | Unit |
|---|---|---|---|
| Absolute Maximum Ratings (Ta = 25C) <For DTr1 and DTr2 in common> | |||
| Supply voltage | VCC | 50 | V |
| Input voltage | VIN | -10 to 40 | V |
| Output current | IO | 30 | mA |
| Collector current | IC(MAX)*1 | 100 | mA |
| Power dissipation (EMG2) | PD*2*3 | 150 | mW |
| Power dissipation (UMG2N) | PD*2*3 | 150 | mW |
| Power dissipation (FMG2A) | PD*2*4 | 300 | mW |
| Junction temperature | Tj | 150 | |
| Range of storage temperature | Tstg | -55 to +150 | |
| Electrical Characteristics (Ta = 25C) <For DTr1 and DTr2 in common> | |||
| Input voltage (VI(off)) | VI(off) | - 0.5 | V |
| Input voltage (VI(on)) | VI(on) | 3.0 - - | V |
| Output voltage (VO(on)) | VO(on) | - 100 300 | mV |
| Input current | II | - 180 | A |
| Output current (IO(off)) | IO(off) | - 500 | n A |
| DC current gain | GI | 68 - - | - |
| Input resistance R1 | R1 | - 32.9 47 61.1 | k |
| Resistance ratio R2/R1 | R2/R1 | - 0.8 1.0 1.2 | - |
| Transition frequency fT*1 | fT*1 | - 250 - | MHz |
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference land
*3 120mW per element must not be exceeded.
*4 200mW per element must not be exceeded.
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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