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Hefei Purple Horn E-Commerce Co., Ltd.

  • China,Hefei ,Anhui
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China Dual digital transistor ROHM FMG3AT148 designed for inverter interface and
China Dual digital transistor ROHM FMG3AT148 designed for inverter interface and

  1. China Dual digital transistor ROHM FMG3AT148 designed for inverter interface and

Dual digital transistor ROHM FMG3AT148 designed for inverter interface and

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Emitter-Base Voltage VEBO 5V
Input Resistor 4.7kΩ
Number -
Collector - Emitter Voltage VCEO 50V
Description Pre-Biased Bipolar Transistor (BJT) 50V 100mA 300mW Surface Mount SOT-25-5
Mfr. Part # FMG3AT148
Package SOT-25-5
Model Number FMG3AT148

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  1. Product Details
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Product Specification

Emitter-Base Voltage VEBO 5V Input Resistor 4.7kΩ
Number - Collector - Emitter Voltage VCEO 50V
Description Pre-Biased Bipolar Transistor (BJT) 50V 100mA 300mW Surface Mount SOT-25-5 Mfr. Part # FMG3AT148
Package SOT-25-5 Model Number FMG3AT148

Product Overview

The EMG3 / UMG3N / FMG3A are common dual digital transistors designed for inverter, interface, and driver applications. These devices integrate two DTC143T chips within a single package, offering significant advantages in reduced mounting cost and board space. Available in SOT-553 (EMT5), SOT-353 (UMT5), and SOT-25 (SMT5) packages, they provide a reliable solution for various electronic designs.

Product Attributes

  • Brand: ROHM

Technical Specifications

Model Package Package Size Taping Code Reel Size (mm) Tape Width (mm) Basic Ordering Unit (pcs) Marking
EMG3 SOT-553 (EMT5) 1616 T2R 180 8 8000 G3
UMG3N SOT-353 (UMT5) 2021 TR 180 8 3000 G3
FMG3A SOT-25 (SMT5) 2928 T148 180 8 3000 G3

Absolute Maximum Ratings (Ta = 25C)

For DTr1 and DTr2 in common

Parameter Symbol Values Unit
Collector-base voltage VCBO 50 V
Collector-emitter voltage VCEO 50 V
Emitter-base voltage VEBO 5 V
Collector current IC 100 mA
Power dissipation PD*1*2 (EMG3) 150 mW/Total
PD*1*2 (UMG3N) 150 mW/Total
PD*1*3 (FMG3A) 300 mW/Total
Junction temperature Tj 150
Range of storage temperature Tstg -55 to +150

Electrical Characteristics (Ta = 25C)

For DTr1 and DTr2 in common

Parameter Symbol Conditions Min. Typ. Max. Unit
Collector-base breakdown voltage BVCBO IC = 50A 50 - - V
Collector-emitter breakdown voltage BVCEO IC = 1mA 50 - - V
Emitter-base breakdown voltage BVEBO IE = 50A 5 - - V
Collector cut-off current ICBO VCB = 50V - - 500 nA
Emitter cut-off current IEBO VEB = 4V - - 500 nA
Collector-emitter saturation voltage VCE(sat) IC = 5mA, IB = 0.25mA - - 300 mV
DC current gain hFE VCE = 5V, IC = 1mA 100 250 600 -
Input resistance R1 - 3.29 4.7 6.11 k
Transition frequency fT*4 VCE = 10V, IE = -5mA, f = 100MHz - 250 - MHz

1809131633_ROHM-FMG3AT148_C95305.pdf

Company Details

Bronze Gleitlager

,

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Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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