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Hefei Purple Horn E-Commerce Co., Ltd.

  • China,Hefei ,Anhui
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China High reliability dual digital transistor ROHM EMG3T2R with 50 volt collector
China High reliability dual digital transistor ROHM EMG3T2R with 50 volt collector

  1. China High reliability dual digital transistor ROHM EMG3T2R with 50 volt collector

High reliability dual digital transistor ROHM EMG3T2R with 50 volt collector

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Emitter-Base Voltage VEBO 5V
Input Resistor 4.7kΩ
Collector - Emitter Voltage VCEO 50V
Description Pre-Biased Bipolar Transistor (BJT) 50V 100mA 150mW Surface Mount SOT-553-5
Mfr. Part # EMG3T2R
Package SOT-553-5
Model Number EMG3T2R

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Product Specification

Emitter-Base Voltage VEBO 5V Input Resistor 4.7kΩ
Collector - Emitter Voltage VCEO 50V Description Pre-Biased Bipolar Transistor (BJT) 50V 100mA 150mW Surface Mount SOT-553-5
Mfr. Part # EMG3T2R Package SOT-553-5
Model Number EMG3T2R

Product Overview

The EMG3 / UMG3N / FMG3A are common dual digital transistors designed for inverter, interface, and driver applications. These devices offer the advantage of reduced mounting cost and area by integrating two DTC143T chips within a single SOT-553 (EMT5), SOT-353 (UMT5), or SOT-25 (SMT5) package. They provide reliable performance with a collector-emitter voltage (VCEO) of 50V and a collector current (IC) of 100mA.

Product Attributes

  • Brand: ROHM
  • Type: Dual Digital Transistor

Technical Specifications

Model Package Package Size (mm) Taping Code Reel Size (mm) Tape Width (mm) Basic Ordering Unit (pcs) Marking
EMG3 SOT-553 (EMT5) 1616 T2R 180 8 8000 G3
UMG3N SOT-353 (UMT5) 2021 TR 180 8 3000 G3
FMG3A SOT-25 (SMT5) 2928 T148 180 8 3000 G3

Absolute Maximum Ratings (Ta = 25C)

Parameter Symbol Values Unit
Collector-base voltage VCBO 50 V
Collector-emitter voltage VCEO 50 V
Emitter-base voltage VEBO 5 V
Collector current IC 100 mA
Power dissipation (EMG3/UMG3N) PD*1*2 150 (Total) mW
Power dissipation (FMG3A) PD*1*3 300 mW
Junction temperature Tj 150
Range of storage temperature Tstg -55 to +150

Electrical Characteristics (Ta = 25C)

Parameter Conditions Min. Typ. Max. Unit
Collector-base breakdown voltage IC = 50A 50 - - V
Collector-emitter breakdown voltage IC = 1mA 50 - - V
Emitter-base breakdown voltage IE = 50A 5 - - V
Collector cut-off current VCB = 50V - - 500 nA
Emitter cut-off current VEB = 4V - - 500 nA
Collector-emitter saturation voltage IC = 5mA, IB = 0.25mA - - 300 mV
DC current gain VCE = 5V, IC = 1mA 100 250 600 -
Input resistance R1 - 3.29 4.7 6.11 k
Transition frequency VCE = 10V, IE = -5mA, f = 100MHz - 250 - MHz

2201121900_ROHM-EMG3T2R_C2941610.pdf

Company Details

Bronze Gleitlager

,

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 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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