Hefei Purple Horn E-Commerce Co., Ltd.
| Output Voltage(VO(on)) | 200mV |
| Input Resistor | 2.2kΩ |
| Resistor Ratio | 0.047 |
| Collector - Emitter Voltage VCEO | 50V |
| Description | 50V SC-88 Single, Pre-Biased Bipolar Transistors RoHS |
| Mfr. Part # | SMUN5335DW1T1G |
| Package | SC-88 |
| Model Number | SMUN5335DW1T1G |
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Product Specification
| Output Voltage(VO(on)) | 200mV | Input Resistor | 2.2kΩ |
| Resistor Ratio | 0.047 | Collector - Emitter Voltage VCEO | 50V |
| Description | 50V SC-88 Single, Pre-Biased Bipolar Transistors RoHS | Mfr. Part # | SMUN5335DW1T1G |
| Package | SC-88 | Model Number | SMUN5335DW1T1G |
This series of digital transistors integrates a single transistor with a monolithic bias network, consisting of a base resistor and a base-emitter resistor. Designed to replace individual components and external resistor networks, these Bias Resistor Transistors (BRTs) simplify circuit design, reduce board space, and lower component count. They are suitable for applications requiring unique site and control change requirements, with S and NSV prefixes qualifying for AEC-Q101 and PPAP capabilities.
| Model | Package | Collector-Base Voltage (VCBO) | Collector-Emitter Voltage (VCEO) | Collector Current (IC) - Continuous | Input Forward Voltage (VIN(fwd)) | Input Reverse Voltage (VIN(rev)) | R1 | R2 |
| DTC123JP/D, MUN5335DW1, NSBC123JPDXV6, NSBC123JPDP6 | SOT-363, SOT-563, SOT-963 | 50 Vdc | 50 Vdc | 100 mAdc | 12 Vdc | 5 Vdc | 2.2 k | 47 k |
| Model | Characteristic | Symbol | Min | Typ | Max | Unit | Notes |
| MUN5335DW1 (SOT-363) | Collector-Base Cutoff Current | ICBO | - | - | 100 | nAdc | VCB = 50 V, IE = 0 |
| Collector-Emitter Cutoff Current | ICEO | - | - | 500 | nAdc | VCE = 50 V, IB = 0 | |
| Emitter-Base Cutoff Current | IEBO | - | - | 0.2 | mAdc | VEB = 6.0 V, IC = 0 | |
| Collector-Base Breakdown Voltage | V(BR)CBO | 50 | - | - | Vdc | IC = 10 A, IE = 0 | |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 50 | - | - | Vdc | Note 6, IC = 2.0 mA, IB = 0 | |
| DC Current Gain | hFE | 80 | 140 | - | - | Note 6, IC = 5.0 mA, VCE = 10 V | |
| Collector-Emitter Saturation Voltage | VCE(sat) | - | - | 0.25 | Vdc | Note 6, IC = 10 mA, IB = 0.3 mA | |
| Input Voltage (Off) | Vi(off) | - | - | 0.6 | Vdc | VCE = 5.0 V, IC = 100 A | |
| Input Voltage (On) | Vi(on) | - | - | 0.8 | Vdc | VCE = 0.2 V, IC = 5.0 mA | |
| Input Resistor | R1 | 1.5 | 2.2 | 2.9 | k | ||
| NSBC123JPDXV6 (SOT-563) | Collector-Base Cutoff Current | ICBO | - | - | 100 | nAdc | VCB = 50 V, IE = 0 |
| Collector-Emitter Cutoff Current | ICEO | - | - | 500 | nAdc | VCE = 50 V, IB = 0 | |
| Emitter-Base Cutoff Current | IEBO | - | - | 0.2 | mAdc | VEB = 6.0 V, IC = 0 | |
| Collector-Base Breakdown Voltage | V(BR)CBO | 50 | - | - | Vdc | IC = 10 A, IE = 0 | |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 50 | - | - | Vdc | Note 6, IC = 2.0 mA, IB = 0 | |
| DC Current Gain | hFE | 80 | 140 | - | - | Note 6, IC = 5.0 mA, VCE = 10 V | |
| Collector-Emitter Saturation Voltage | VCE(sat) | - | - | 0.25 | Vdc | Note 6, IC = 10 mA, IB = 0.3 mA | |
| Input Voltage (Off) | Vi(off) | - | - | 0.6 | Vdc | VCE = 5.0 V, IC = 100 A | |
| Input Voltage (On) | Vi(on) | - | - | 0.8 | Vdc | VCE = 0.2 V, IC = 5.0 mA | |
| Input Resistor | R1 | 1.5 | 2.2 | 2.9 | k | ||
| NSBC123JPDP6 (SOT-963) | Collector-Base Cutoff Current | ICBO | - | - | 100 | nAdc | VCB = 50 V, IE = 0 |
| Collector-Emitter Cutoff Current | ICEO | - | - | 500 | nAdc | VCE = 50 V, IB = 0 | |
| Emitter-Base Cutoff Current | IEBO | - | - | 0.2 | mAdc | VEB = 6.0 V, IC = 0 | |
| Collector-Base Breakdown Voltage | V(BR)CBO | 50 | - | - | Vdc | IC = 10 A, IE = 0 | |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 50 | - | - | Vdc | Note 6, IC = 2.0 mA, IB = 0 | |
| DC Current Gain | hFE | 80 | 140 | - | - | Note 6, IC = 5.0 mA, VCE = 10 V | |
| Collector-Emitter Saturation Voltage | VCE(sat) | - | - | 0.25 | Vdc | Note 6, IC = 10 mA, IB = 0.3 mA | |
| Input Voltage (Off) | Vi(off) | - | - | 0.6 | Vdc | VCE = 5.0 V, IC = 100 A | |
| Input Voltage (On) | Vi(on) | - | - | 0.8 | Vdc | VCE = 0.2 V, IC = 5.0 mA | |
| Input Resistor | R1 | 1.5 | 2.2 | 2.9 | k |
| Package | Characteristic | Symbol | Max | Unit | Notes |
| MUN5335DW1 (SOT-363) | Total Device Dissipation (One Junction Heated) | PD | 187 | mW | TA = 25C, Note 1, 2 |
| Derate above 25C (One Junction Heated) | 1.5 | mW/C | Note 1, 2 | ||
| Thermal Resistance, Junction to Ambient (One Junction Heated) | RJA | 670 | C/W | Note 1, 2 | |
| Total Device Dissipation (Both Junctions Heated) | PD | 250 | mW | TA = 25C, Note 1, 2, 3 | |
| Derate above 25C (Both Junctions Heated) | 2.0 | mW/C | Note 1, 2, 3 | ||
| Thermal Resistance, Junction to Ambient (Both Junctions Heated) | RJA | 493 | C/W | Note 1, 2, 3 | |
| Thermal Resistance, Junction to Lead | RJL | 188 | C/W | Note 1, 2 | |
| Junction and Storage Temperature Range | TJ, Tstg | 150 | C | 55 to +150 | |
| Total Device Dissipation (One Junction Heated) | PD | 256 | mW | TA = 25C, Note 1, 2 | |
| Derate above 25C (One Junction Heated) | 2.0 | mW/C | Note 1, 2 | ||
| Thermal Resistance, Junction to Ambient (One Junction Heated) | RJA | 490 | C/W | Note 1, 2 | |
| Thermal Resistance, Junction to Lead | RJL | 208 | C/W | Note 1, 2 | |
| NSBC123JPDXV6 (SOT-563) | Total Device Dissipation (One Junction Heated) | PD | 357 | mW | TA = 25C, Note 1 |
| Derate above 25C (One Junction Heated) | 2.9 | mW/C | Note 1 | ||
| Thermal Resistance, Junction to Ambient (One Junction Heated) | RJA | 350 | C/W | Note 1 | |
| Total Device Dissipation (Both Junctions Heated) | PD | 500 | mW | TA = 25C, Note 1, 3 | |
| Derate above 25C (Both Junctions Heated) | 4.0 | mW/C | Note 1, 3 | ||
| Thermal Resistance, Junction to Ambient (Both Junctions Heated) | RJA | 250 | C/W | Note 1, 3 | |
| Junction and Storage Temperature Range | TJ, Tstg | 150 | C | 55 to +150 | |
| NSBC123JPDP6 (SOT-963) | Total Device Dissipation (One Junction Heated) | PD | 231 | mW | TA = 25C, Note 4, 5 |
| Derate above 25C (One Junction Heated) | 1.9 | mW/C | Note 4, 5 | ||
| Thermal Resistance, Junction to Ambient (One Junction Heated) | RJA | 540 | C/W | Note 4, 5 | |
| Total Device Dissipation (Both Junctions Heated) | PD | 339 | mW | TA = 25C, Note 4, 5, 3 | |
| Derate above 25C (Both Junctions Heated) | 2.7 | mW/C | Note 4, 5, 3 | ||
| Thermal Resistance, Junction to Ambient (Both Junctions Heated) | RJA | 369 | C/W | Note 4, 5, 3 | |
| Junction and Storage Temperature Range | TJ, Tstg | 150 | C | 55 to +150 | |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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