China factories

Chat Now Send Email
China factory - Hefei Purple Horn E-Commerce Co., Ltd.

Hefei Purple Horn E-Commerce Co., Ltd.

  • China,Hefei ,Anhui
  • Verified Supplier
  1. Home
  2. Products
  3. About Us
  4. Contact Us

Leave a Message

we will call you back quickly!

Submit Requirement
China Integrated Bias Resistor Network Digital Transistor onsemi DTC124XET1G Ideal for
China Integrated Bias Resistor Network Digital Transistor onsemi DTC124XET1G Ideal for

  1. China Integrated Bias Resistor Network Digital Transistor onsemi DTC124XET1G Ideal for

Integrated Bias Resistor Network Digital Transistor onsemi DTC124XET1G Ideal for

  1. MOQ:
  2. Price:
  3. Get Latest Price
Input Resistor 28.6kΩ
Collector - Emitter Voltage VCEO 50V
Description Pre-Biased Bipolar Transistor (BJT) 50V 100mA 200mW Surface Mount SC-75(SOT-416)
Mfr. Part # DTC124XET1G
Package SC-75(SOT-416)
Model Number DTC124XET1G

View Detail Information

Inquiry by Email Get Latest Price
Chat online Now Ask for best deal
  1. Product Details
  2. Company Details

Product Specification

Input Resistor 28.6kΩ Collector - Emitter Voltage VCEO 50V
Description Pre-Biased Bipolar Transistor (BJT) 50V 100mA 200mW Surface Mount SC-75(SOT-416) Mfr. Part # DTC124XET1G
Package SC-75(SOT-416) Model Number DTC124XET1G

Digital Transistors (BRT) with Monolithic Bias Resistor Network

This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a baseemitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. These devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant.

  • Simplifies Circuit Design
  • Reduces Board Space
  • Reduces Component Count
  • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable

Technical Specifications

Device PartMarkingPackageCollector-Base Voltage (VCBO)Collector-Emitter Voltage (VCEO)Collector Current (IC)Input Forward Voltage (VIN(fwd))Input Reverse Voltage (VIN(rev))R1R2Total Device Dissipation (PD) @ 25C (mW)Thermal Resistance Junction to Ambient (RJA) (C/W)Collector-Base Cutoff Current (ICBO)Collector-Emitter Cutoff Current (ICEO)Emitter-Base Cutoff Current (IEBO)Collector-Base Breakdown Voltage (V(BR)CBO)Collector-Emitter Breakdown Voltage (V(BR)CEO)DC Current Gain (hFE)Collector-Emitter Saturation Voltage (VCE(sat))Input Voltage (off) (Vi(off))Input Voltage (on) (Vi(on))Output Voltage (on) (VOL)Output Voltage (off) (VOH)
MUN2234T1G8LSC-5950 Vdc50 Vdc100 mAdc40 Vdc8 Vdc22 k47 k230 (Note 1) / 338 (Note 2)540 (Note 1) / 370 (Note 2)100 nAdc500 nAdc0.13 mAdc50 Vdc50 Vdc80 - 150 0.25 Vdc 0.5 Vdc 2.0 Vdc 0.2 Vdc4.9 Vdc
MMUN2234LT1G, SMMUN2234LT1G*A8LSOT-2350 Vdc50 Vdc100 mAdc40 Vdc8 Vdc22 k47 k246 (Note 1) / 400 (Note 2)508 (Note 1) / 311 (Note 2)100 nAdc500 nAdc0.13 mAdc50 Vdc50 Vdc80 - 150 0.25 Vdc 0.5 Vdc 2.0 Vdc 0.2 Vdc4.9 Vdc
MUN5234T1G, NSVMUN5234T1G*8LSC-70/SOT-32350 Vdc50 Vdc100 mAdc40 Vdc8 Vdc22 k47 k202 (Note 1) / 310 (Note 2)618 (Note 1) / 403 (Note 2)100 nAdc500 nAdc0.13 mAdc50 Vdc50 Vdc80 - 150 0.25 Vdc 0.5 Vdc 2.0 Vdc 0.2 Vdc4.9 Vdc
DTC124XET1G8LSC-7550 Vdc50 Vdc100 mAdc40 Vdc8 Vdc22 k47 k200 (Note 1) / 300 (Note 2)600 (Note 1) / 400 (Note 2)100 nAdc500 nAdc0.13 mAdc50 Vdc50 Vdc80 - 150 0.25 Vdc 0.5 Vdc 2.0 Vdc 0.2 Vdc4.9 Vdc
DTC124XM3T5G8LSOT-72350 Vdc50 Vdc100 mAdc40 Vdc8 Vdc22 k47 k260 (Note 1) / 600 (Note 2)480 (Note 1) / 205 (Note 2)100 nAdc500 nAdc0.13 mAdc50 Vdc50 Vdc80 - 150 0.25 Vdc 0.5 Vdc 2.0 Vdc 0.2 Vdc4.9 Vdc
NSBC124XF3T5GJ (180)SOT-112350 Vdc50 Vdc100 mAdc40 Vdc8 Vdc22 k47 k254 (Note 3) / 297 (Note 4)493 (Note 3) / 421 (Note 4)100 nAdc500 nAdc0.13 mAdc50 Vdc50 Vdc80 - 150 0.25 Vdc 0.5 Vdc 2.0 Vdc 0.2 Vdc4.9 Vdc

Notes:
1. FR-4 @ Minimum Pad.
2. FR-4 @ 1.0 x 1.0 Inch Pad.
3. FR-4 @ 100 mm2, 1 oz. copper traces, still air.
4. FR-4 @ 500 mm2, 1 oz. copper traces, still air.
5. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle 2%.


2411271936_onsemi-DTC124XET1G_C890588.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

.gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c... .gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c...

+ Read More

Get in touch with us

  • Reach Us
  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

Leave a Message, we will call you back quickly!

Email

Check your email

Phone Number

Check your phone number

Requirement Details

Your message must be between 20-3,000 characters!

Submit Requirement