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Hefei Purple Horn E-Commerce Co., Ltd.

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  3. Digital Transistor LRC LMUN5316DW1T1G Dual Bias Resistor Transistor in Space
China Digital Transistor LRC LMUN5316DW1T1G Dual Bias Resistor Transistor in Space
China Digital Transistor LRC LMUN5316DW1T1G Dual Bias Resistor Transistor in Space

  1. China Digital Transistor LRC LMUN5316DW1T1G Dual Bias Resistor Transistor in Space

Digital Transistor LRC LMUN5316DW1T1G Dual Bias Resistor Transistor in Space

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Output Voltage(VO(on)) 200mV
Input Resistor 4.7kΩ
Resistor Ratio -
Collector - Emitter Voltage VCEO 50V
Description Pre-Biased Bipolar Transistor (BJT) 50V 100mA 250mW Surface Mount SOT-363
Mfr. Part # LMUN5316DW1T1G
Package SOT-363
Model Number LMUN5316DW1T1G

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  1. Product Details
  2. Company Details

Product Specification

Output Voltage(VO(on)) 200mV Input Resistor 4.7kΩ
Resistor Ratio - Collector - Emitter Voltage VCEO 50V
Description Pre-Biased Bipolar Transistor (BJT) 50V 100mA 250mW Surface Mount SOT-363 Mfr. Part # LMUN5316DW1T1G
Package SOT-363 Model Number LMUN5316DW1T1G

Product Overview

The LMUN5311DW1T1G Series represents a line of Dual Bias Resistor Transistors (BRT) housed in a compact SOT-363/SC-88 package. Each BRT integrates a single transistor with a monolithic bias network, comprising a series base resistor and a base-emitter resistor. This design eliminates the need for external bias components, simplifying circuit design, reducing board space, and decreasing component count. These digital transistors are ideal for low-power surface mount applications where space is a constraint. The series includes both NPN and PNP silicon transistors with integrated bias resistor networks.

Product Attributes

  • Brand: LESHAN RADIO COMPANY, LTD.
  • Material Compliance: RoHS requirements

Technical Specifications

Model Series Package Device Marking R1 (k) R2 (k) Shipping Quantity
LMUN5311DW1T1G SOT-363 11 10 10 3000/Tape&Reel
LMUN5311DW1T3G SOT-363 11 10 10 10000/Tape&Reel
LMUN5312DW1T1G SOT-363 12 22 22 3000/Tape&Reel
LMUN5312DW1T3G SOT-363 12 22 22 10000/Tape&Reel
LMUN5313DW1T1G SOT-363 13 47 47 3000/Tape&Reel
LMUN5313DW1T3G SOT-363 13 47 47 10000/Tape&Reel
LMUN5314DW1T1G SOT-363 14 10 47 3000/Tape&Reel
LMUN5314DW1T3G SOT-363 14 10 47 10000/Tape&Reel
LMUN5315DW1T1G SOT-363 15 10 - 3000/Tape&Reel
LMUN5315DW1T3G SOT-363 15 10 - 10000/Tape&Reel
LMUN5316DW1T1G SOT-363 16 4.7 - 3000/Tape&Reel
LMUN5316DW1T3G SOT-363 16 4.7 - 10000/Tape&Reel
LMUN5330DW1T1G SOT-363 30 1 1 3000/Tape&Reel
LMUN5330DW1T3G SOT-363 30 1 1 10000/Tape&Reel
LMUN5331DW1T1G SOT-363 31 2.2 2.2 3000/Tape&Reel
LMUN5331DW1T3G SOT-363 31 2.2 2.2 10000/Tape&Reel
LMUN5332DW1T1G SOT-363 32 4.7 4.7 3000/Tape&Reel
LMUN5332DW1T3G SOT-363 32 4.7 4.7 10000/Tape&Reel
LMUN5333DW1T1G SOT-363 33 4.7 47 3000/Tape&Reel
LMUN5333DW1T3G SOT-363 33 4.7 47 10000/Tape&Reel
LMUN5334DW1T1G SOT-363 34 22 47 3000/Tape&Reel
LMUN5334DW1T3G SOT-363 34 22 47 10000/Tape&Reel
LMUN5335DW1T1G SOT-363 35 2.2 47 3000/Tape&Reel
LMUN5335DW1T3G SOT-363 35 2.2 47 10000/Tape&Reel
Characteristic Symbol Value Unit Notes
Collector-Base Voltage VCBO 50 Vdc Common for Q1 and Q2
Collector-Emitter Voltage VCEO 50 Vdc Common for Q1 and Q2
Collector Current IC 100 mAdc Common for Q1 and Q2
Total Device Dissipation (One Junction Heated) PD 187 (Note 1)
250 (Note 1)		 mW TA= 25C
Derate above 25C (One Junction Heated) 2.0 (Note 1)
3.0 (Note 2)		 mW/C
Thermal Resistance Junction-to-Ambient (One Junction Heated) RJA 670 (Note 1)
490 (Note 2)		 C/W
Total Device Dissipation (Both Junctions Heated) PD 250 (Note 1)
385 (Note 2)		 mW TA= 25C
Derate above 25C (Both Junctions Heated) 2.0 (Note 1)
3.0 (Note 2)		 mW/C
Thermal Resistance Junction-to-Ambient (Both Junctions Heated) RJA 493 (Note 1)
325 (Note 2)		 C/W
Thermal Resistance Junction-to-Lead RJL 188 (Note 1)
208 (Note 2)		 C/W
Junction and Storage Temperature TJ, Tstg 55 to +150 C
Collector-Base Breakdown Voltage V(BR)CBO 50 Vdc IC = 10 A, IE = 0
Collector-Emitter Breakdown Voltage V(BR)CEO 50 Vdc Note 3, IC = 2.0 mA, IB = 0
Collector-Base Cutoff Current ICBO 100 nAdc VCB = 50 V, IE = 0
Collector-Emitter Cutoff Current ICEO 500 nAdc VCE = 50 V, IB = 0

Notes:

  • 1. FR4 @ Minimum Pad
  • 2. FR4 @ 1.0 x 1.0 inch Pad
  • 3. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
  • 4. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
Model hFE (VCE = 10 V, IC = 5.0 mA) VCE(sat) (IC = 10 mA, IB = 0.3 mA) VCE(sat) (IC = 10 mA, IB = 5 mA) VCE(sat) (IC = 10 mA, IB = 1 mA) VOL (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k) VOL (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k) VOH (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k) VOH (VCC = 5.0 V, VB = 0.050 V, RL = 1.0 k) R1 (k) R2 (k) R1/R2 Ratio
LMUN5311DW1T1G 3560 0.2 Vdc 4.9 Vdc 7.0 10 0.8
LMUN5312DW1T1G 60100 0.2 Vdc 4.9 Vdc 15.4 22 0.8
LMUN5313DW1T1G 80140 0.2 Vdc 4.9 Vdc 32.9 47 1.0
LMUN5314DW1T1G 80140 0.2 Vdc 4.9 Vdc 7.0 10 0.17
LMUN5315DW1T1G 160350 0.25 Vdc 0.2 Vdc 4.9 Vdc 7.0 - -
LMUN5316DW1T1G 160350 0.25 Vdc 0.2 Vdc 4.9 Vdc 4.7 - -
LMUN5330DW1T1G 3.05.0 0.25 Vdc 0.2 Vdc 4.9 Vdc 1 1 1.0
LMUN5331DW1T1G 8.015 0.25 Vdc 0.2 Vdc 4.9 Vdc 2.2 2.2 1.0
LMUN5332DW1T1G 1530 0.25 Vdc 0.2 Vdc 4.9 Vdc 4.7 4.7 1.0
LMUN5333DW1T1G 80200 0.25 Vdc 4.9 Vdc 4.7 47 0.1
LMUN5334DW1T1G 80150 0.25 Vdc 4.9 Vdc 22 47 0.47
LMUN5335DW1T1G 60140 0.25 Vdc 4.9 Vdc 2.2 47 0.047
Characteristic Symbol Min Typ Max Unit Notes
Emitter-Base Cutoff Current IEBO 0.5 (LMUN5311DW1T1G) mAdc VEB = 6.0 V, IC = 0
Emitter-Base Cutoff Current IEBO 0.2 (LMUN5312DW1T1G) mAdc VEB = 6.0 V, IC = 0
Emitter-Base Cutoff Current IEBO 0.1 (LMUN5313DW1T1G) mAdc VEB = 6.0 V, IC = 0
Emitter-Base Cutoff Current IEBO 0.2 (LMUN5314DW1T1G) mAdc VEB = 6.0 V, IC = 0
Emitter-Base Cutoff Current IEBO 0.9 (LMUN5315DW1T1G) mAdc VEB = 6.0 V, IC = 0
Emitter-Base Cutoff Current IEBO 1.9 (LMUN5316DW1T1G) mAdc VEB = 6.0 V, IC = 0
Emitter-Base Cutoff Current IEBO 4.3 (LMUN5330DW1T1G) mAdc VEB = 6.0 V, IC = 0
Emitter-Base Cutoff Current IEBO 2.3 (LMUN5331DW1T1G) mAdc VEB = 6.0 V, IC = 0
Emitter-Base Cutoff Current IEBO 1.5 (LMUN5332DW1T1G) mAdc VEB = 6.0 V, IC = 0
Emitter-Base Cutoff Current IEBO 0.18 (LMUN5333DW1T1G) mAdc VEB = 6.0 V, IC = 0
Emitter-Base Cutoff Current IEBO 0.13 (LMUN5334DW1T1G) mAdc VEB = 6.0 V, IC = 0
Emitter-Base Cutoff Current IEBO 0.2 (LMUN5335DW1T1G) mAdc VEB = 6.0 V, IC = 0

Package Dimensions (SC-88/SOT-363)

Dim Min Max Min Max
INCHES MILLIMETERS
A 0.071 0.087 1.80 2.20
B 0.045 0.053 1.15 1.35
C 0.031 0.043 0.80 1.10
D 0.004 0.012 0.10 0.30
G 0.026 BSC 0.65 BSC
H --- 0.004 --- 0.10
J 0.004 0.010 0.10 0.25
K 0.004 0.012 0.10 0.30
N 0.008 REF 0.20 REF
S 0.079 0.087 2.00 2.20

Pin Description

  • Pin 1: Emitter 1
  • Pin 2: Base 1
  • Pin 3: Collector 1
  • Pin 4: Emitter 2
  • Pin 5: Base 2
  • Pin 6: Collector 2

1808031851_LRC-LMUN5316DW1T1G_C136187.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory

  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification：

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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