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Hefei Purple Horn E-Commerce Co., Ltd.

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China Monolithic bias resistor network digital transistor onsemi MUN5215DW1T1G for and
China Monolithic bias resistor network digital transistor onsemi MUN5215DW1T1G for and

  1. China Monolithic bias resistor network digital transistor onsemi MUN5215DW1T1G for and

Monolithic bias resistor network digital transistor onsemi MUN5215DW1T1G for and

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Output Voltage(VO(on)) 200mV
Input Resistor 10kΩ
Collector - Emitter Voltage VCEO 50V
Description Pre-Biased Bipolar Transistor (BJT) 50V 100mA 187mW Surface Mount SOT-363
Mfr. Part # MUN5215DW1T1G
Package SOT-363
Model Number MUN5215DW1T1G

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Product Specification

Output Voltage(VO(on)) 200mV Input Resistor 10kΩ
Collector - Emitter Voltage VCEO 50V Description Pre-Biased Bipolar Transistor (BJT) 50V 100mA 187mW Surface Mount SOT-363
Mfr. Part # MUN5215DW1T1G Package SOT-363
Model Number MUN5215DW1T1G

Product Overview

This series of digital transistors with monolithic bias resistor networks is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) integrates a single transistor with a series base resistor and a base-emitter resistor, reducing system cost and board space. These devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant.

Product Attributes

  • Brand: onsemi
  • Certifications: AEC-Q101 Qualified and PPAP Capable (S and NSV Prefix)
  • Compliance: PbFree, Halogen Free/BFR Free, RoHS Compliant

Technical Specifications

DevicePackageCollector-Base Voltage (VCBO)Collector-Emitter Voltage (VCEO)Collector Current (IC)Input Forward Voltage (VIN(fwd))Input Reverse Voltage (VIN(rev))R1 Value
DTC114TD/D, MUN5215DW1, NSBC114TDXV6, NSBC114TDP6SOT-36350 Vdc50 Vdc100 mAdc40 Vdc6 Vdc10 kΩ
DevicePackageTotal Device Dissipation (PD) - One Junction Heated (TA = 25C)Thermal Resistance (RJA) - One Junction Heated (TA = 25C)Total Device Dissipation (PD) - Both Junction Heated (TA = 25C)Thermal Resistance (RJA) - Both Junction Heated (TA = 25C)Junction and Storage Temperature Range (TJ, Tstg)
MUN5215DW1SOT-363187 mW (Note 1), 256 mW (Note 2)670 C/W (Note 1), 490 C/W (Note 2)250 mW (Note 1), 385 mW (Note 2)493 C/W (Note 1), 325 C/W (Note 2)-55 to +150 C
NSBC114TDXV6SOT-563357 mW (Note 1)350 C/W (Note 1)500 mW (Note 1)250 C/W (Note 1)-55 to +150 C
NSBC114TDP6SOT-963231 mW (Note 4), 269 mW (Note 5)540 C/W (Note 4), 464 C/W (Note 5)339 mW (Note 3)369 C/W (Note 4), 306 C/W (Note 5)-55 to +150 C
CharacteristicSymbolMinTypMaxUnitConditions
Collector-Base Cutoff CurrentICBO--100nAdcVCB = 50 V, IE = 0
Collector-Emitter Cutoff CurrentICEO--500nAdcVCE = 50 V, IB = 0
Emitter-Base Cutoff CurrentIEBO--0.9mAdcVEB = 6.0 V, IC = 0
Collector-Base Breakdown VoltageV(BR)CBO50--VdcIC = 10 A, IE = 0
Collector-Emitter Breakdown VoltageV(BR)CEO50--VdcIC = 2.0 mA, IB = 0 (Note 6)
DC Current GainhFE160350--IC = 5.0 mA, VCE = 10 V (Note 6)
Collector-Emitter Saturation VoltageVCE(sat)--0.25VdcIC = 10 mA, IB = 1.0 mA (Note 6)
Input Voltage (off)Vi(off)-0.6-VdcVCE = 5.0 V, IC = 100 A
Input Voltage (on)Vi(on)-1.4-VdcVCE = 0.2 V, IC = 10 mA
Output Voltage (on)VOL--0.2VdcVCC = 5.0 V, VB = 2.5 V, RL = 1.0 kΩ
Output Voltage (off)VOH4.9--VdcVCC = 5.0 V, VB = 0.25 V, RL = 1.0 kΩ
Input ResistorR17.01013kΩ-

2410121940_onsemi-MUN5215DW1T1G_C150239.pdf

Company Details

Bronze Gleitlager

,

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 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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