| Output Voltage(VO(on)) | 200mV |
| Input Resistor | 6.1kΩ |
| Collector - Emitter Voltage VCEO | 50V |
| Description | Pre-Biased Bipolar Transistor (BJT) 1 PNP Pre-Biased Transistor, 1 NPN 50V 100mA 187mW Surface Mount SOT-363 |
| Mfr. Part # | MUN5316DW1T1G |
| Package | SOT-363 |
| Model Number | MUN5316DW1T1G |
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Product Specification
| Output Voltage(VO(on)) | 200mV | Input Resistor | 6.1kΩ |
| Collector - Emitter Voltage VCEO | 50V | Description | Pre-Biased Bipolar Transistor (BJT) 1 PNP Pre-Biased Transistor, 1 NPN 50V 100mA 187mW Surface Mount SOT-363 |
| Mfr. Part # | MUN5316DW1T1G | Package | SOT-363 |
| Model Number | MUN5316DW1T1G |
This series of digital transistors integrates a single transistor with a monolithic bias network, consisting of a series base resistor and a base-emitter resistor. Designed to replace external bias resistors, these Bias Resistor Transistors (BRTs) simplify circuit design, reduce board space, and lower component count. They are suitable for applications requiring replacement of single devices and their external resistor bias networks.
| Device | Package | CollectorBase Voltage (VCBO) | CollectorEmitter Voltage (VCEO) | Collector Current (IC) | Input Forward Voltage (VIN(fwd)) | Input Reverse Voltage (VIN(rev)) | R1 | Shipping |
| MUN5316DW1 | SOT363 | 50 Vdc | 50 Vdc | 100 mAdc | 30 Vdc | 6 Vdc (NPN), 5 Vdc (PNP) | 3.3 - 4.7 - 6.1 k | 3,000 / Tape & Reel |
| NSVMUN5316DW1 | SOT363 | 50 Vdc | 50 Vdc | 100 mAdc | 30 Vdc | 6 Vdc (NPN), 5 Vdc (PNP) | 3.3 - 4.7 - 6.1 k | 3,000 / Tape & Reel |
| NSBC143TPDXV6 | SOT563 | 50 Vdc | 50 Vdc | 100 mAdc | 30 Vdc | 6 Vdc (NPN), 5 Vdc (PNP) | 3.3 - 4.7 - 6.1 k | 4,000 / Tape & Reel |
| NSVBC143TPDXV6 | SOT563 | 50 Vdc | 50 Vdc | 100 mAdc | 30 Vdc | 6 Vdc (NPN), 5 Vdc (PNP) | 3.3 - 4.7 - 6.1 k | 4,000 / Tape & Reel |
| Characteristic | Symbol | Min | Typ | Max | Unit | Notes |
| CollectorBase Cutoff Current | ICBO | - | - | 100 | nAdc(VCB = 50 V, IE = 0) | |
| CollectorEmitter Cutoff Current | ICEO | - | - | 500 | nAdc(VCE = 50 V, IB = 0) | |
| EmitterBase Cutoff Current | IEBO | - | - | 1.9 | mAdc(VEB = 6.0 V, IC = 0) | |
| CollectorBase Breakdown Voltage | V(BR)CBO | 50 | - | - | Vdc(IC = 10 A, IE = 0) | |
| CollectorEmitter Breakdown Voltage | V(BR)CEO | 50 | - | - | Vdc(IC = 2.0 mA, IB = 0) | |
| DC Current Gain | hFE | 160 | 350 | - | - | (IC = 5.0 mA, VCE = 10 V) |
| CollectorEmitter Saturation Voltage | VCE(sat) | - | - | 0.25 | Vdc(IC = 10 mA, IB = 0.3 mA) | |
| Input Voltage (off) | Vi(off) | - | 0.6 (NPN) 0.58 (PNP) | - | Vdc(VCE = 5.0 V, IC = 100 A) | |
| Input Voltage (on) | Vi(on) | - | 0.9 (NPN) 1.0 (PNP) | - | Vdc(VCE = 0.2 V, IC = 10 mA) | |
| Output Voltage (on) | VOL | - | - | 0.2 | Vdc(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k) | |
| Output Voltage (off) | VOH | 4.9 | - | - | Vdc(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k) |
| Characteristic | Symbol | MUN5316DW1 (SOT363) Max Unit | NSBC143TPDXV6 (SOT563) Max Unit | Notes |
| Total Device Dissipation (One Junction Heated) | PD | 187 mW (@25C) 1.5 mW/C (Derate) | 357 mW (@25C) 2.9 mW/C (Derate) | (Note 1) |
| Total Device Dissipation (Both Junctions Heated) | PD | 250 mW (@25C) 2.0 mW/C (Derate) | 500 mW (@25C) 4.0 mW/C (Derate) | (Note 3) |
| Thermal Resistance, Junction to Ambient | RJA | 670 C/W (One Junction) 490 C/W (Both Junctions) | 350 C/W (One Junction) 250 C/W (Both Junctions) | (Note 1, 2) |
| Junction and Storage Temperature Range | TJ, Tstg | 55 to +150 C | - | |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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