| Holding Current (Ih) | 60mA |
| Current - Gate Trigger(Igt) | 50mA |
| Voltage - On State(Vtm) | 1.5V |
| Average Gate Power Dissipation (PG(AV)) | 1W |
| Current - On State(It(RMS)) | 10A |
| Peak off - state voltage(Vdrm) | 800V |
| Current - Surge(Itsm@f) | 100A |
| SCR Type | 1 TRIAC |
| Operating Temperature | -40℃~+125℃ |
| Gate Trigger Voltage (Vgt) | 1.5V |
| Description | TRIAC 800V 10A Surface Mount TO-263 |
| Mfr. Part # | BTB10-800BW |
| Package | TO-263 |
| Model Number | BTB10-800BW |
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Product Specification
| Holding Current (Ih) | 60mA | Current - Gate Trigger(Igt) | 50mA |
| Voltage - On State(Vtm) | 1.5V | Average Gate Power Dissipation (PG(AV)) | 1W |
| Current - On State(It(RMS)) | 10A | Peak off - state voltage(Vdrm) | 800V |
| Current - Surge(Itsm@f) | 100A | SCR Type | 1 TRIAC |
| Operating Temperature | -40℃~+125℃ | Gate Trigger Voltage (Vgt) | 1.5V |
| Description | TRIAC 800V 10A Surface Mount TO-263 | Mfr. Part # | BTB10-800BW |
| Package | TO-263 | Model Number | BTB10-800BW |
The BTA10/BTB10 series triacs from Jiangsu Weida Semiconductor Co., Ltd. are designed for applications requiring high shock loading capability with large currents. They offer a high dv/dt rate, strong resistance to electromagnetic interference, and excellent commutation performance, making them particularly suitable for inductive loads. The BTA10 series provides a rated insulation voltage of 2500 VRMS, complying with UL standards.
| Parameter | Symbol | Value | Unit | Description |
| RMS on-state current | IT(RMS) | 10 | A | Main Feature |
| Repetitive peak off-state voltage | VDRM | 600/800 | V | Absolute Maximum Ratings |
| Repetitive peak reverse voltage | VRRM | 600/800 | V | Absolute Maximum Ratings |
| On-state voltage (max) | VTM | ≤1.5 | V | Main Feature / Static Characteristics |
| Non repetitive surge peak on-state current (full cycle, F=50Hz) | ITSM | 100 | A | Absolute Maximum Ratings |
| I2t value for fusing (tp=10ms) | I2t | 55 | A2s | Absolute Maximum Ratings |
| Critical rate of rise of on-state current(IG=2×IGT) | dI/dt | 50 | A/μs | Absolute Maximum Ratings |
| Storage junction temperature range | Tstg | -40~150 | °C | Absolute Maximum Ratings |
| Operating junction temperature range | Tj | -40~125 | °C | Absolute Maximum Ratings |
| Gate Trigger Current (Quadrant I-II-III, max) | IGT | 5 (TW) / 10 (SW) / 35 (CW) / 50 (BW) | mA | Electrical Characteristics (3 Quadrants) |
| Gate Trigger Current (Quadrant IV, max) | IGT | 50 (B) / 70 (C) | mA | Electrical Characteristics (4 Quadrants) |
| Holding Current (max) | IH | 10-60 | mA | Electrical Characteristics |
| Latching Current (max) | IL | 20-90 | mA | Electrical Characteristics |
| Critical dV/dt (Tj=125°C, Gate open) | dV/dt | 50-1000 | V/μs | Electrical Characteristics |
| Off-state current (max) | IDRM/IRRM | 5 (Tj=25°C) / 1 (Tj=125°C) | μA | Static Characteristics |
| Junction to case thermal resistance (AC) | Rth(j-c) | 1.6 - 2.7 | °C/W | Thermal Resistances (Package Dependent) |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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