Hefei Purple Horn E-Commerce Co., Ltd.
| Holding Current (Ih) | 60mA |
| Current - Gate Trigger(Igt) | 50mA |
| Voltage - On State(Vtm) | 1.55V |
| Average Gate Power Dissipation (PG(AV)) | 1W |
| Current - On State(It(RMS)) | 40A |
| Peak off - state voltage(Vdrm) | 800V |
| Current - Surge(Itsm@f) | 400A |
| SCR Type | 1 TRIAC |
| Gate Trigger Voltage (Vgt) | 1.3V |
| Operating Temperature | -40℃~+125℃ |
| Description | TRIAC 800V 40A Through Hole TO-3P |
| Mfr. Part # | BTA41-800B |
| Package | TO-3P |
| Model Number | BTA41-800B |
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Product Specification
| Holding Current (Ih) | 60mA | Current - Gate Trigger(Igt) | 50mA |
| Voltage - On State(Vtm) | 1.55V | Average Gate Power Dissipation (PG(AV)) | 1W |
| Current - On State(It(RMS)) | 40A | Peak off - state voltage(Vdrm) | 800V |
| Current - Surge(Itsm@f) | 400A | SCR Type | 1 TRIAC |
| Gate Trigger Voltage (Vgt) | 1.3V | Operating Temperature | -40℃~+125℃ |
| Description | TRIAC 800V 40A Through Hole TO-3P | Mfr. Part # | BTA41-800B |
| Package | TO-3P | Model Number | BTA41-800B |
The Jiangsu Weida Semiconductor BTA41 Series 40A Triacs are designed for high current shock loading applications, offering a high dv/dt rate and strong resistance to electromagnetic interference. These triacs feature excellent commutation performance, with 3-quadrant products specifically recommended for inductive loads. They provide an insulation voltage of 2500V RMS from all terminals to the heatsink, complying with UL standards.
| Parameter | Symbol | Value | Unit | Notes |
|---|---|---|---|---|
| RMS On-State Current | IT(RMS) | 40.0 | A | |
| Repetitive Peak Off-State Voltage | VDRM | 600/800/1200/1600 | V | (Tj=25) |
| Repetitive Peak Reverse Voltage | VRRM | 600/800/1200/1600 | V | (Tj=25) |
| Non-Repetitive Surge Peak On-State Current | ITSM | 400 | A | (full cycle, F=50Hz) |
| I2t Value for Fusing | I2t | 880 | A2s | (tp=10ms) |
| Critical Rate of Rise of On-State Current | dI/dt | 50 | A/s | (IG=2IGT) |
| Peak Gate Current | IGM | 4 | A | |
| Average Gate Power Dissipation | PG(AV) | 1 | W | |
| Peak Gate Power | PGM | 10 | W | |
| Storage Junction Temperature Range | Tstg | -40~150 | ||
| Operating Junction Temperature Range | Tj | -40~125 | ||
| Gate Trigger Current (3 Quadrants) | IGT | MAX 50 | mA | VD=12V, RL=33 |
| Gate Trigger Voltage (3 Quadrants) | VGT | 1.3 | V | |
| Gate Non-Trigger Voltage (3 Quadrants) | VGD | MIN 0.2 | V | VD=VDRM, Tj=125 |
| Holding Current (3 Quadrants) | IH | MAX 60 | mA | IT=100mA |
| Latching Current (Quadrant II, 3 Quadrants) | IL | 100 | mA | IG=1.2IGT |
| Critical dV/dt (3 Quadrants) | dV/dt | MIN 1000 | V/s | VD=2/3VDRM, Tj=125, Gate open |
| Gate Trigger Current (4 Quadrants) | IGT | MAX 50 (I-II-III), MAX 70 (IV) | mA | VD=12V, RL=33 |
| Gate Trigger Voltage (4 Quadrants) | VGT | 1.3 | V | ALL Quadrants |
| Gate Non-Trigger Voltage (4 Quadrants) | VGD | MIN 0.2 | V | VD=VDRM, Tj=125, ALL Quadrants |
| Holding Current (4 Quadrants) | IH | MAX 60 | mA | IT=100mA |
| Latching Current (Quadrants I-III-IV, 4 Quadrants) | IL | MAX 80 | mA | IG=1.2IGT |
| Latching Current (Quadrant II, 4 Quadrants) | IL | 100 | mA | IG=1.2IGT |
| Critical dV/dt (4 Quadrants) | dV/dt | MIN 1000 | V/s | VD=2/3VDRM, Tj=125, Gate open |
| On-State Voltage | VTM | MAX 1.55 | V | ITM=60A, tp=380s, Tj=25 |
| Off-State Current (IDRM/IRRM) | IDRM/IRRM | MAX 10 (Tj=25), MAX 5 (Tj=125) | A | VDRM= VRRM |
| Thermal Resistance (Junction to Case, AC) TO-3P(Ins) | Rth(j-c) | 1.1 | /W | |
| Thermal Resistance (Junction to Case, AC) TO-247(Non-Ins) | Rth(j-c) | 0.91 | /W | |
| Thermal Resistance (Junction to Case, AC) TG-C | Rth(j-c) | 0.65 | /W |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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