Hefei Purple Horn E-Commerce Co., Ltd.
| Holding Current (Ih) | 45mA |
| Current - Gate Trigger(Igt) | 35mA |
| Voltage - On State(Vtm) | 1.5V |
| Average Gate Power Dissipation (PG(AV)) | 1W |
| Current - On State(It(RMS)) | 30A |
| Peak off - state voltage(Vdrm) | 800V |
| Current - Surge(Itsm@f) | 300A@50Hz |
| SCR Type | 1 TRIAC |
| Gate Trigger Voltage (Vgt) | 1.5V |
| Operating Temperature | -40℃~+150℃ |
| Description | 45mA 35mA 800V 1 TRIAC TO-220B TRIACs RoHS |
| Mfr. Part # | T3035H-800B |
| Package | TO-220B |
| Model Number | T3035H-800B |
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Product Specification
| Holding Current (Ih) | 45mA | Current - Gate Trigger(Igt) | 35mA |
| Voltage - On State(Vtm) | 1.5V | Average Gate Power Dissipation (PG(AV)) | 1W |
| Current - On State(It(RMS)) | 30A | Peak off - state voltage(Vdrm) | 800V |
| Current - Surge(Itsm@f) | 300A@50Hz | SCR Type | 1 TRIAC |
| Gate Trigger Voltage (Vgt) | 1.5V | Operating Temperature | -40℃~+150℃ |
| Description | 45mA 35mA 800V 1 TRIAC TO-220B TRIACs RoHS | Mfr. Part # | T3035H-800B |
| Package | TO-220B | Model Number | T3035H-800B |
The T30**H series triacs from Jiangsu Weida Semiconductor Co., Ltd. are designed for high junction temperature applications, offering a high dv/dt rate and robust resistance to electromagnetic interference. These triacs excel in handling large current shock loading, making them ideal for inductive loads and high ambient temperature environments.
| Parameter | Symbol | T3035 Value | T3050 Value | Unit | Test Condition | Quadrant |
| Gate Trigger Current | IGT | MAX 35 | MAX 50 | mA | VD=12V, RL=33 | -- |
| Gate Trigger Voltage | VGT | 1.5 | V | |||
| Gate Non-trigger Voltage | VGD | MIN 0.2 | V | VD=VDRM | -- | |
| Holding Current | IH | MAX 45 | MAX 60 | mA | IT=100mA | |
| Latching Current | IL | MAX 50 | MAX 70 | mA | IG=1.2IGT | - |
| Latching Current | IL | 70 | 90 | mA | IG=1.2IGT | |
| Critical rate of rise of on-state current | dI/dt | 50 | A/s | (IG=2IGT) | ||
| Repetitive peak off-state voltage | VDRM | 600/800 | V | (Tj=25) | ||
| Repetitive peak reverse voltage | VRRM | 600/800 | V | (Tj=25) | ||
| RMS on-state current | IT(RMS) | 30 | A | |||
| Non repetitive surge peak on-state current | ITSM | 300 | A | (full cycle, F=50Hz) | ||
| I2t value for fusing | I2t | 340 | A2s | (tp=10ms) | ||
| Storage junction temperature range | Tstg | -40~150 | ||||
| Operating junction temperature range | Tj | -40~150 | ||||
| Peak gate current | IGM | 4 | A | |||
| Average gate power dissipation | PG(AV) | 1 | W | |||
| Peak gate power | PGM | 10 | W | |||
| On-state voltage | VTM | MAX 1.5 | V | ITM=35A, tp=380s, Tj=25 | ||
| Off-state current | IDRM/IRRM | MAX 10 | A | VDRM=VRRM, Tj=25 | ||
| Off-state current | IDRM/IRRM | 3 | mA | VDRM=VRRM, Tj=125 | ||
| Critical dV/dt | dV/dt | MIN 500/1000 | V/s | VD=2/3VDRM, Tj=150, Gate open | ||
| Junction to case thermal resistance | Rth(j-c) | 1.7 | /W | (AC), TO-220A(Ins | ||
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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