| Holding Current (Ih) | 7mA |
| Current - Gate Trigger(Igt) | 10mA |
| Voltage - On State(Vtm) | 1.5V |
| Average Gate Power Dissipation (PG(AV)) | 100mW |
| Current - On State(It(RMS)) | 800mA |
| Peak off - state voltage(Vdrm) | 800V |
| Current - Surge(Itsm@f) | 9A@50Hz |
| SCR Type | 1 TRIAC |
| Gate Trigger Voltage (Vgt) | 1.3V |
| Operating Temperature | -40℃~+125℃ |
| Description | TRIAC 800V 0.8A Surface Mount SOT-23-3L |
| Mfr. Part # | 97A6 |
| Package | SOT-23-3L |
| Model Number | 97A6 |
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Product Specification
| Holding Current (Ih) | 7mA | Current - Gate Trigger(Igt) | 10mA |
| Voltage - On State(Vtm) | 1.5V | Average Gate Power Dissipation (PG(AV)) | 100mW |
| Current - On State(It(RMS)) | 800mA | Peak off - state voltage(Vdrm) | 800V |
| Current - Surge(Itsm@f) | 9A@50Hz | SCR Type | 1 TRIAC |
| Gate Trigger Voltage (Vgt) | 1.3V | Operating Temperature | -40℃~+125℃ |
| Description | TRIAC 800V 0.8A Surface Mount SOT-23-3L | Mfr. Part # | 97A6 |
| Package | SOT-23-3L | Model Number | 97A6 |
The Jiangsu Weida Semiconductor 97A6/97A8 Series is a 0.8A Triac specifically designed for middle and small resistance type power loads. Its key advantages include low holding and latching current, making it ideal for applications requiring precise control of AC power.
| Parameter | Symbol | Value | Unit | Test Condition | Quadrant | Notes |
| MAIN FEATURES | ||||||
| RMS on-state current | IT(RMS) | 0.8 | A | |||
| Repetitive peak off-state voltage | VDRM/VRRM | 600/800 | V | |||
| On-state voltage | VTM | ≤1.5 | V | ITM=1.1A tp=380s Tj=25 | MAX | |
| ABSOLUTE MAXIMUM RATINGS | ||||||
| Storage junction temperature range | Tstg | -40~150 | ||||
| Operating junction temperature range | Tj | -40~125 | ||||
| Repetitive peak off-state voltage | VDRM | 600/800 | V | Tj=25 | ||
| Repetitive peak reverse voltage | VRRM | 600/800 | V | Tj=25 | ||
| RMS on-state current | IT(RMS) | 0.8 | A | |||
| Non repetitive surge peak on-state current | ITSM | 9 | A | full cycle, F=50Hz | ||
| I2t value for fusing | I2t | 0.45 | A2s | tp=10ms | ||
| Critical rate of rise of on-state current | dI/dt | 50 | A/s | IG=2×IGT | -- | |
| Critical rate of rise of on-state current | dI/dt | 10 | A/s | IG=2×IGT | ||
| Peak gate current | IGM | 1 | A | |||
| Average gate power dissipation | PG(AV) | 0.1 | W | |||
| Peak gate power | PGM | 5 | W | |||
| ELECTRICAL CHARACTERISTICS | ||||||
| Gate trigger current | IGT | MAX 5 | mA | VD=12V, RL=33Ω | -- | Tj=25 unless otherwise specified |
| Gate trigger current | IGT | 10 | mA | VD=12V, RL=33Ω | Tj=25 unless otherwise specified | |
| Gate trigger voltage | VGT | 1.3 | V | --- | Tj=25 unless otherwise specified | |
| Gate non-trigger voltage | VGD | MIN 0.2 | V | VD=VDRM Tj=125 | --- | Tj=25 unless otherwise specified |
| Holding current | IH | MAX 7 | mA | IT=100mA | Tj=25 unless otherwise specified | |
| Latching current | IL | MAX 5 | mA | IG=1.2IGT | -- | Tj=25 unless otherwise specified |
| Latching current | IL | 20 | mA | IG=1.2IGT | Tj=25 unless otherwise specified | |
| Critical rate of rise of off-state voltage | dV/dt | MIN 50 | V/µs | VD=0.66×VDRM Tj=125Gate open | Tj=25 unless otherwise specified | |
| STATIC CHARACTERISTICS | ||||||
| On-state voltage | VTM | MAX 1.5 | V | ITM=1.1A tp=380s Tj=25 | ||
| Off-state current | IDRM | MAX 5 | µA | VDRM= VRRM Tj=25 | ||
| Off-state current | IDRM | 0.5 | mA | VDRM= VRRM Tj=125 | ||
| Reverse leakage current | IRRM | MAX 5 | µA | VDRM= VRRM Tj=25 | ||
| Reverse leakage current | IRRM | 0.5 | mA | VDRM= VRRM Tj=125 | ||
| THERMAL RESISTANCES | ||||||
| junction to case(AC) | Rth(j-c) | 75 | °C/W | TO-92 | ||
| junction to case(AC) | Rth(j-c) | 45 | °C/W | SOT-223/SOT-23-2L | ||
| junction to case(AC) | Rth(j-c) | 60 | °C/W | SOT-89-2L | ||
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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