Hefei Purple Horn E-Commerce Co., Ltd.
| Holding Current (Ih) | 20mA |
| Current - Gate Trigger(Igt) | 25mA |
| Voltage - On State(Vtm) | 1.7V |
| Average Gate Power Dissipation (PG(AV)) | 500mW |
| Current - On State(It(RMS)) | 2A |
| Peak off - state voltage(Vdrm) | 800V |
| Current - Surge(Itsm@f) | 25A |
| SCR Type | 1 TRIAC |
| Operating Temperature | -40℃~+125℃ |
| Gate Trigger Voltage (Vgt) | 1.3V |
| Description | TRIAC 800V 2A Surface Mount SOT-223-3L |
| Mfr. Part # | BT134-800D |
| Package | SOT-223-3L |
| Model Number | BT134-800D |
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Product Specification
| Holding Current (Ih) | 20mA | Current - Gate Trigger(Igt) | 25mA |
| Voltage - On State(Vtm) | 1.7V | Average Gate Power Dissipation (PG(AV)) | 500mW |
| Current - On State(It(RMS)) | 2A | Peak off - state voltage(Vdrm) | 800V |
| Current - Surge(Itsm@f) | 25A | SCR Type | 1 TRIAC |
| Operating Temperature | -40℃~+125℃ | Gate Trigger Voltage (Vgt) | 1.3V |
| Description | TRIAC 800V 2A Surface Mount SOT-223-3L | Mfr. Part # | BT134-800D |
| Package | SOT-223-3L | Model Number | BT134-800D |
The Jiangsu Weida Semiconductor BT134 Series 4A Triacs are designed for middle and small resistance type power load applications. They are recommended for their low holding and latching current characteristics.
| Parameter | Symbol | Value | Unit | Test Condition | Quadrants |
| Repetitive peak off-state voltage | VDRM | 600/800 | V | Tj=25 | |
| Repetitive peak reverse voltage | VRRM | 600/800 | V | Tj=25 | |
| RMS on-state current | IT(RMS) | 4 | A | ||
| Non repetitive surge peak on-state current | ITSM | 25 | A | full cycle, F=50Hz | |
| I2t value for fusing | I2t | 3.1 | A2s | tp=10ms | |
| Critical rate of rise of on-state current | dI/dt | 50 | A/s | IG=2IGT | -- |
| Critical rate of rise of on-state current | dI/dt | 10 | A/s | IG=2IGT | |
| Peak gate current | IGM | 2 | A | ||
| Average gate power dissipation | PG(AV) | 0.5 | W | ||
| Peak gate power | PGM | 5 | W | ||
| Gate Trigger Current | IGT | MAX 5/10/25 | mA | VD=12V, RL=33 | --/ |
| Gate Trigger Voltage | VGT | 1.3 | V | --- | |
| Gate Open Voltage | VGD | MIN 0.2 | V | VD=VDRM | --- |
| Holding Current | IH | MAX 5/10/20 | mA | IT=100mA | -- |
| Holding Current | IH | MAX 12/15/35 | mA | IT=100mA | |
| Latching Current | IL | MAX 8/10/20 | mA | IG=1.2IGT | -- |
| Latching Current | IL | MAX 12/15/35 | mA | IG=1.2IGT | |
| Critical rate of rise of off-state voltage | dV/dt | MIN 10/20/50 | V/s | VD=0.66VDRM Tj=125 Gate open | |
| On-state voltage | VTM | MAX 1.7 | V | ITM=5A tp=380s Tj=25 | |
| Off-state current | IDRM | MAX 5 | A | VDRM Tj=25 | |
| Off-state current | IDRM | 0.5 | mA | VDRM Tj=125 | |
| Reverse leakage current | IRRM | MAX 5 | A | VRRM Tj=25 | |
| Reverse leakage current | IRRM | 0.5 | mA | VRRM Tj=125 | |
| Storage junction temperature range | Tstg | -40~150 | |||
| Operating junction temperature range | Tj | -40~125 |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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