| Holding Current (Ih) | 20mA |
| Current - Gate Trigger(Igt) | 10mA |
| Voltage - On State(Vtm) | 1.7V |
| Average Gate Power Dissipation (PG(AV)) | 500mW |
| Current - On State(It(RMS)) | 4A |
| Peak off - state voltage(Vdrm) | 800V |
| Current - Surge(Itsm@f) | 27A |
| SCR Type | 1 TRIAC |
| Gate Trigger Voltage (Vgt) | 1.5V |
| Description | 20mA 10mA 800V 1 TRIAC TO-252 TRIACs RoHS |
| Mfr. Part # | BT136S-800E |
| Package | TO-252 |
| Model Number | BT136S-800E |
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Product Specification
| Holding Current (Ih) | 20mA | Current - Gate Trigger(Igt) | 10mA |
| Voltage - On State(Vtm) | 1.7V | Average Gate Power Dissipation (PG(AV)) | 500mW |
| Current - On State(It(RMS)) | 4A | Peak off - state voltage(Vdrm) | 800V |
| Current - Surge(Itsm@f) | 27A | SCR Type | 1 TRIAC |
| Gate Trigger Voltage (Vgt) | 1.5V | Description | 20mA 10mA 800V 1 TRIAC TO-252 TRIACs RoHS |
| Mfr. Part # | BT136S-800E | Package | TO-252 |
| Model Number | BT136S-800E |
Glass passivated triacs designed for high bidirectional transient and blocking voltage capability, along with excellent thermal cycling performance. Ideal for motor control, industrial and domestic lighting, heating, and static switching applications.
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Repetitive peak off-state voltages | VRRM VDRM | -500 | 500 | V | ||
| -600 | 600 | |||||
| -800 | 800 | |||||
| On-State RMS Current | IT(RMS) | full sine wave; Tmb ≤ 107 °C | 4 | A | ||
| Non-repetitive peak on-state current | ITSM | full sine wave; Tj = 25 °C prior to surge | t = 20 ms | 25 | A | |
| t = 16.7 ms | 27 | A | ||||
| I2t for fusing | I2t | t = 10 ms | 3.1 | A2s | ||
| Repetitive rate of rise of on-state current after triggering | dIT/dt | ITM = 3 A; IG = 0.2 A; dIG/dt = 0.2 A/µs | 50 | A/µs | ||
| Peak gate current | IGM | 2 | A | |||
| Peak Gate Voltage | VGM | 5 | V | |||
| Peak gate power | PGM | 5 | W | |||
| Average gate power | PG(AV) | over any 20 ms period | 0.5 | W | ||
| Operating junction temperature | TJ | 125 | °C | |||
| Storage Temperature | Tstg | -40 | 150 | °C | ||
| Thermal resistance junction to solder point | Rth j-sp | full or half cycle | 3.0 | K/W | ||
| Thermal resistance junction to ambient | Rth j-a | pcb mounted; | 75 | K/W | ||
| Gate trigger current | IGT | VD = 12 V, IT = 0.1 A | -- | 10 | mA | |
| VD = 12 V, IGT = 0.1 A | - | 15 | ||||
| Latching current | IL | VD = 12 V, IGT = 0.1 A | 20 | mA | ||
| Holding current | IH | VD = 12 V, IGT = 0.1 A | - | 15 | mA | |
| 20 | ||||||
| On-state voltage | VT | IT = 5A | 1.4 | 1.7 | V | |
| Gate trigger voltage | VGT | VD = 12 V; IT = 0.1 A | 0.7 | 1.5 | V | |
| VD = 400 V; IT = 0.1 A; Tj = 125 °C | 0.25 | 0.4 | ||||
| Off-state leakage current | ID | VD = VDRM(max); Tj = 125 °C | 0.5 | mA | ||
| Critical rate of rise of off-state voltage | dVD/dt | VDM =67% VDRM(max); Tj = 125 °C exponential waveform; gate open circuit | 50 | V/µs | ||
| Gate controlled turn-on time | tgt | ITM = 6 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/µs; | 2 | µs |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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