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Hefei Purple Horn E-Commerce Co., Ltd.

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China High Capacitance Ratio Silicon Variable Capacitance Diode Infineon BB565E7902
China High Capacitance Ratio Silicon Variable Capacitance Diode Infineon BB565E7902

  1. China High Capacitance Ratio Silicon Variable Capacitance Diode Infineon BB565E7902

High Capacitance Ratio Silicon Variable Capacitance Diode Infineon BB565E7902

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Capacitance Ratio 11@C1V/C28V
Diode Configuration Independent
DC Reverse Voltage(Vr) 30V
Diode Capacitance 2.2pF@28V,1MHz
Description 11@C1V/C28V Independent 30V 2.2pF@28V,1MHz SCD-80 Variable Capacitance (Varicaps, Varactors) RoHS
Mfr. Part # BB565E7902
Package SCD-80
Model Number BB565E7902

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Product Specification

Capacitance Ratio 11@C1V/C28V Diode Configuration Independent
DC Reverse Voltage(Vr) 30V Diode Capacitance 2.2pF@28V,1MHz
Description 11@C1V/C28V Independent 30V 2.2pF@28V,1MHz SCD-80 Variable Capacitance (Varicaps, Varactors) RoHS Mfr. Part # BB565E7902
Package SCD-80 Model Number BB565E7902

Product Overview

The BB545/BB565 series are Silicon Variable Capacitance Diodes designed for UHF-TV tuners. These diodes offer a high capacitance ratio, low series inductance, and low series resistance. They are manufactured using an "in-line" matching assembly procedure, ensuring excellent uniformity and matching. The components are Pb-free and RoHS compliant.

Product Attributes

  • Brand: Infineon Technologies
  • Material: Silicon
  • Compliance: Pb-free (RoHS compliant)

Technical Specifications

Model Package Configuration LS (nH) Marking
BB545 SOD323 single 1.8 white U
BB565 SCD80 single 0.6 CC
BB565-02V SC79 single 0.6 C
Parameter Symbol Value Unit
Maximum Ratings at TA = 25C, unless otherwise specified
Diode reverse voltage VR 30 V
Peak reverse voltage (R 5k) VRM 35 V
Forward current IF 20 mA
Operating temperature range Top -55 ... 150 C
Storage temperature Tstg -55 ... 150 C
Electrical Characteristics at TA = 25C, unless otherwise specified
Reverse current (VR = 30 V) IR - nA
Reverse current (VR = 30 V, TA = 85 C) IR - 200 nA
Diode capacitance (VR = 1 V, f = 1 MHz) CT 18.5 pF
Diode capacitance (VR = 1 V, f = 1 MHz) CT 20 pF
Diode capacitance (VR = 1 V, f = 1 MHz) CT 21.5 pF
Diode capacitance (VR = 2 V, f = 1 MHz) CT 13.2 pF
Diode capacitance (VR = 2 V, f = 1 MHz) CT 14.8 pF
Diode capacitance (VR = 2 V, f = 1 MHz) CT 16.4 pF
Diode capacitance (VR = 25 V, f = 1 MHz) CT 1.85 pF
Diode capacitance (VR = 25 V, f = 1 MHz) CT 2.07 pF
Diode capacitance (VR = 25 V, f = 1 MHz) CT 2.28 pF
Diode capacitance (VR = 28 V, f = 1 MHz) CT 1.8 pF
Diode capacitance (VR = 28 V, f = 1 MHz) CT 2 pF
Diode capacitance (VR = 28 V, f = 1 MHz) CT 2.2 pF
Capacitance ratio (VR = 1 V, VR = 28 V, f = 1 MHz) CT1/CT28 9 -
Capacitance ratio (VR = 1 V, VR = 28 V, f = 1 MHz) CT1/CT28 10 -
Capacitance ratio (VR = 1 V, VR = 28 V, f = 1 MHz) CT1/CT28 11 -
Capacitance ratio (VR = 2 V, VR = 25 V, f = 1 MHz) CT2/CT25 6.3 -
Capacitance ratio (VR = 2 V, VR = 25 V, f = 1 MHz) CT2/CT25 7.2 -
Capacitance ratio (VR = 2 V, VR = 25 V, f = 1 MHz) CT2/CT25 8.1 -
Capacitance matching (VR = 1V to 28V, f = 1 MHz, 7 diodes sequence, BB545) CT/CT - 0.5 %
Capacitance matching (VR = 1V to 28V, f = 1 MHz, 4 diodes sequence, BB565/-02V) CT/CT - 0.7 %
Capacitance matching (VR = 1V to 28V, f = 1 MHz, 7 diodes sequence, BB565/-02V) CT/CT - 2.5 %
Capacitance matching (VR = 1V to 28V, f = 1 MHz, 7 diodes sequence, BB565/-02V) CT/CT - 1.5 %
Series resistance (VR = 3 V, f = 470 MHz) rS 0.6
Series inductance LS 0.6 nH

1) For details please refer to Application Note 047


2411200037_Infineon-BB565E7902_C3272573.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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