Hefei Purple Horn E-Commerce Co., Ltd.
| Holding Current (Ih) | 5mA |
| Current - Gate Trigger(Igt) | 5mA |
| Voltage - On State(Vtm) | 1.6V |
| Average Gate Power Dissipation (PG(AV)) | - |
| Current - On State(It(RMS)) | 4A |
| Peak off - state voltage(Vdrm) | 600V |
| Current - Surge(Itsm@f) | - |
| SCR Type | - |
| Operating Temperature | -40℃~+125℃ |
| Gate Trigger Voltage (Vgt) | 1.5V |
| Description | TRIAC 600V 4A Surface Mount TO-252 |
| Mfr. Part # | BT136S-600E |
| Package | TO-252 |
| Model Number | BT136S-600E |
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Product Specification
| Holding Current (Ih) | 5mA | Current - Gate Trigger(Igt) | 5mA |
| Voltage - On State(Vtm) | 1.6V | Average Gate Power Dissipation (PG(AV)) | - |
| Current - On State(It(RMS)) | 4A | Peak off - state voltage(Vdrm) | 600V |
| Current - Surge(Itsm@f) | - | SCR Type | - |
| Operating Temperature | -40℃~+125℃ | Gate Trigger Voltage (Vgt) | 1.5V |
| Description | TRIAC 600V 4A Surface Mount TO-252 | Mfr. Part # | BT136S-600E |
| Package | TO-252 | Model Number | BT136S-600E |
The BT136S/M Series E Triacs are glass-passivated, sensitive gate triacs in a plastic envelope, designed for surface mounting. They are suitable for general-purpose bidirectional switching and phase control applications requiring high sensitivity in all four quadrants.
| Symbol | Parameter | Conditions | BT136S-500E | BT136S-600E | BT136S-800E | Unit |
| VDRM | Repetitive peak off-state voltage | 500 | 600 | 800 | V | |
| IT(RMS) | RMS on-state current | full sine wave; Tmb 107 C | 4 | 4 | 4 | A |
| ITSM | Non-repetitive peak on-state current | full sine wave; Tj = 25 C prior to surge; t = 20 ms | 25 | 25 | 25 | A |
| ITSM | Non-repetitive peak on-state current | full sine wave; Tj = 25 C prior to surge; t = 16.7 ms | 27 | 27 | 27 | A |
| I2t | I2t for fusing | t = 10 ms | 3.1 | 3.1 | 3.1 | A2s |
| dIT/dt | Repetitive rate of rise of on-state current | ITM = 6 A; IG = 0.2 A; dIG/dt = 0.2 A/s after triggering | 50 (T2+ G+, T2+ G-, T2- G-) | 50 (T2+ G+, T2+ G-, T2- G-) | 50 (T2+ G+, T2+ G-, T2- G-) | A/s |
| dIT/dt | Repetitive rate of rise of on-state current | ITM = 6 A; IG = 0.2 A; dIG/dt = 0.2 A/s after triggering | 10 (T2- G+) | 10 (T2- G+) | 10 (T2- G+) | A/s |
| IGM | Peak gate current | 2 | 2 | 2 | A | |
| VGM | Peak gate voltage | 5 | 5 | 5 | V | |
| PGM | Peak gate power | 5 | 5 | 5 | W | |
| PG(AV) | Average gate power over any 20 ms period | 0.5 | 0.5 | 0.5 | W | |
| Tstg | Storage temperature | -40 | -40 | -40 | C | |
| Tj | Operating junction temperature | 125 | 125 | 125 | C | |
| Rth j-mb | Thermal resistance junction to mounting base | full cycle | 3.0 | 3.0 | 3.0 | K/W |
| Rth j-mb | Thermal resistance junction to mounting base | half cycle | 3.7 | 3.7 | 3.7 | K/W |
| Rth j-a | Thermal resistance junction to ambient | pcb (FR4) mounted; footprint as in Fig.14 | 75 | 75 | 75 | K/W |
| IGT | Gate trigger current | VD = 12 V; IT = 0.1 A (T2+ G+) | 2.5 | 2.5 | 2.5 | mA |
| IGT | Gate trigger current | VD = 12 V; IT = 0.1 A (T2+ G-) | 4.0 | 4.0 | 4.0 | mA |
| IGT | Gate trigger current | VD = 12 V; IT = 0.1 A (T2- G-) | 5.0 | 5.0 | 5.0 | mA |
| IGT | Gate trigger current | VD = 12 V; IT = 0.1 A (T2- G+) | 11 | 11 | 11 | mA |
| IL | Latching current | VD = 12 V; IGT = 0.1 A (T2+ G+) | 3.0 | 3.0 | 3.0 | mA |
| IL | Latching current | VD = 12 V; IGT = 0.1 A (T2+ G-) | 10 | 10 | 10 | mA |
| IL | Latching current | VD = 12 V; IGT = 0.1 A (T2- G-) | 2.5 | 2.5 | 2.5 | mA |
| IL | Latching current | VD = 12 V; IGT = 0.1 A (T2- G+) | 4.0 | 4.0 | 4.0 | mA |
| IH | Holding current | VD = 12 V; IGT = 0.1 A | 2.2 | 2.2 | 2.2 | mA |
| VT | On-state voltage | IT = 5 A | 1.4 | 1.4 | 1.4 | V |
| VT | On-state voltage | IT = 5 A | 1.70 | 1.70 | 1.70 | V |
| VGT | Gate trigger voltage | VD = 12 V; IT = 0.1 A | 0.7 | 0.7 | 0.7 | V |
| VGT | Gate trigger voltage | VD = 12 V; IT = 0.1 A | 1.5 | 1.5 | 1.5 | V |
| VGT | Gate trigger voltage | VD = 400 V; IT = 0.1 A; Tj = 125 C | 0.25 | 0.25 | 0.25 | - |
| VGT | Gate trigger voltage | VD = 400 V; IT = 0.1 A; Tj = 125 C | 0.4 | 0.4 | 0.4 | - |
| ID | Off-state leakage current | VD = VDRM(max); Tj = 125 C | 0.1 | 0.1 | 0.1 | mA |
| ID | Off-state leakage current | VD = VDRM(max); Tj = 125 C | 0.5 | 0.5 | 0.5 | mA |
| dVD/dt | Critical rate of rise of off-state voltage | VDM = 67% VDRM(max); Tj = 125 C; exponential waveform; gate open circuit | 50 | 50 | 50 | V/s |
| tgt | Gate controlled turn-on time | ITM = 6 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/s | 2 | 2 | 2 | s |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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