| Holding Current (Ih) | 60mA |
| Current - Gate Trigger(Igt) | 50mA |
| Voltage - On State(Vtm) | 1.65V |
| Average Gate Power Dissipation (PG(AV)) | 1W |
| Current - On State(It(RMS)) | 16A |
| Peak off - state voltage(Vdrm) | 800V |
| Current - Surge(Itsm@f) | 160A |
| Operating Temperature | -40℃~+125℃ |
| Gate Trigger Voltage (Vgt) | 1.5V |
| Description | 60mA 50mA 800V TO-220 TRIACs RoHS |
| Mfr. Part # | BTB16-600B |
| Package | TO-220 |
| Model Number | BTB16-600B |
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Product Specification
| Holding Current (Ih) | 60mA | Current - Gate Trigger(Igt) | 50mA |
| Voltage - On State(Vtm) | 1.65V | Average Gate Power Dissipation (PG(AV)) | 1W |
| Current - On State(It(RMS)) | 16A | Peak off - state voltage(Vdrm) | 800V |
| Current - Surge(Itsm@f) | 160A | Operating Temperature | -40℃~+125℃ |
| Gate Trigger Voltage (Vgt) | 1.5V | Description | 60mA 50mA 800V TO-220 TRIACs RoHS |
| Mfr. Part # | BTB16-600B | Package | TO-220 |
| Model Number | BTB16-600B |
The BTA16/BTB16 Triacs feature a planar, glass-passivated PN junction with a highly reliable dv/dt characteristic. These devices are suitable for applications such as temperature control, dimming, and motor speed control.
| Parameter | Symbol | Value | Unit | Test Conditions |
| MAIN CHARACTERISTICS | ||||
| RMS on-state current | IT(RMS) | 16 | A | TC=86 (full sine wave) |
| Non repetitive surge peak on-state current | ITSM | 160 | A | F=50HZ ,t=20ms |
| I2t value for fusing | I2t | 144 | As | TP=10ms |
| Critical rate of rise of on-state current | di/dt | 50 | A/s | F=120HZ,Tj=125 |
| Peak gate current | IGM | 4 | A | TP=20s,Tj=125 |
| Average gate power dissipation | PG(AV) | 1 | W | Tj=125 |
| Storage junction temperature range | Tstg | -40-+150 | ||
| Operating junction temperature range | Tj | -40-+125 | ||
| ELECTRICAL CHARACTERISTICS (3 quadrants) | ||||
| Gate trigger current | IGT | ≤10 (SW) / ≤35 (CW) / ≤50 (BW) | mA | VD=12V, I T=0.1A (Quadrant I~III) |
| Gate trigger voltage | VGT | ≤1.5 | V | VD=12V, I T=0.1A |
| Holding current | IH | ≤15 (SW) / ≤25 (CW) / ≤60 (BW) | mA | VD=12V, I T=0.1A |
| Latching current | IL | ≤50 | mA | |
| Rise of off- state voltage | dv/dt | ≥40 (SW) / ≥500 (CW) / ≥1000 (BW) | V/S | VD=67%VDRM, IT=22A |
| Peak on-state voltage | VTM | ≤1.65 | V | IT=22A |
| Peak repetitive forward blocking current | IDRM/IRRM | ≤5 (≤2 @ Tj=125) | μA | VRRM=VDRM, Tj=25 |
| ELECTRICAL CHARACTERISTICS (4 quadrants) | ||||
| Gate trigger current | IGT | ≤25 (C) / ≤50 (B) | mA | VD=12V, IT=0.1A (Quadrant I~III) |
| Gate trigger voltage | VGT | ≤1.5 | V | VD=12V, IT=0.1A |
| Holding current | IH | ≤25 (C) / ≤50 (B) | mA | VD=12V, IT=0.1A |
| Latching current | IL | ≤40 (I-III-IV) / ≤80 (II) | mA | VD=12V, IT=0.1A |
| Rise of off- state voltage | dv/dt | ≥200 (C) / ≥400 (B) | V/S | VD=67%VDRM, IT=22A |
| Peak on-state voltage | VTM | ≤1.6 | V | IT=22A |
| Peak repetitive forward blocking current | IDRM/IRRM | ≤5 (≤1 @ Tj=125) | μA | VRRM=VDRM, Tj=25 |
| THERMAL RESISTANCES | ||||
| Junction to case (AC) | Rth(j-c) | 1.2 (TO-220B) / 2.1 (TO-220A Insulated) | /W | |
| Junction to ambient | Rth(j-a) | 60 (TO-220A Insulated) | /W | |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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