| Description | TO-3P TRIACs RoHS |
| Mfr. Part # | BTA41-800B-LGE |
| Package | TO-3P |
| Model Number | BTA41-800B-LGE |
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Product Specification
| Description | TO-3P TRIACs RoHS | Mfr. Part # | BTA41-800B-LGE |
| Package | TO-3P | Model Number | BTA41-800B-LGE |
The LGE BTA41/BTB41 series are 40A, & quadrant triacs designed for inductive load switching and ON/OFF function applications. These silicon bidirectional devices feature a five-layer NPNPN structure, trenching technology, mesa glass passivation, and multi-layer metallized electrodes. They offer high blocking voltage and excellent temperature stability, making them suitable for motor speed control, heating regulation, solid-state relays, and phase control circuits.
| Parameter | Symbol | BTA/BTB | Units | Conditions |
| MAXIMUM RATING | ||||
| R.M.S. On-State Current | IT(RMS) | 40 | A | Tc=80 / Tc=90 |
| Non-Repetitive Surge Peak On-State Current (Full Cycle, Tj initial=25) | ITSM | 400 (F=50Hz, T=20ms) 420 (F=60Hz, T=16.7ms) | A | |
| I2t Value for Fusing | I2t | 1000 | As | tp=10ms |
| Critical Rate of Rise of On-State Current | di/dt | 50 | A/s | IG=2IGT, tr100ns, F=120Hz, Tj=125 |
| Repetitive peak Off-State voltage | VDRM/VRRM | 1600 | V | Tj=25 |
| Non repetitive surge peak off-state voltage | VDSM/VRSM | VDRM/VRRM+100 | V | tp=10ms, Tj=25 |
| Peak Gate Current | IGM | 8 | A | tp=20s, Tj=125 |
| Average Gate Power Dissipation | PG(AV) | 1 | W | Tj=125 |
| Typical Thermal Resistance (Junction to Ambient) | RJA | 60 (TO-247/TO-247 Ins) 50 (TO-3P/TO-3P Ins) | /W | |
| Typical Thermal Resistance (Junction to Case (AC)) | RJC | 0.6 (TO-247/TO-3P) 0.9 (TO-247 Ins, TO-3P Ins) | /W | |
| Maximum Operating Junction temperature | TJ | -40~+125 | ||
| Storage temperature range | TSTG | -40~+150 | ||
| ELECTRICAL CHARACTERISTICS ( QUADRANTS) | ||||
| Gate Trigger Current | IGT | MAX 50 | mA | VD=12V, RL=100 ( quadrant) |
| Gate Trigger Voltage | VGT | MAX 1.5 | V | |
| Gate Non-Trigger Voltage | VGD | MIN 0.2 | V | Tj=125 ( quadrant) |
| Holding Current | IH | MAX 60 | mA | IT=0.5A |
| Latching Current | IL | MAX 60 ( quadrant) MAX 100 ( quadrant) | mA | IG=1.2IGT |
| Critical Rate of Rise of Off-State Voltage | dv/dt | MIN 550 | V/s | VD=2/3VDRM, Tj=125 |
| Critical Rate of Rise of Off-State Voltage at Commutation | (dv/dt)c | MIN 10 | V/s | Tj=125 |
| ELECTRICAL CHARACTERISTICS ( QUADRANTS) | ||||
| Gate Trigger Current | IGT | MAX 50 () MAX 120 () | mA | VD=12V, RL=100 ( quadrant) |
| Gate Trigger Voltage | VGT | MAX 1.5 | V | All |
| Gate Non-Trigger Voltage | VGD | MIN 0.2 | V | Tj=125 ( quadrant) |
| Holding Current | IH | MAX 80 | mA | IT=0.5A |
| Latching Current | IL | MAX 80 ( quadrant) MAX 160 ( quadrant) | mA | IG=1.2IGT |
| Critical Rate of Rise of Off-State Voltage | dv/dt | MIN 550 | V/s | VD=2/3VDRM, Tj=125 |
| Critical Rate of Rise of Off-State Voltage at Commutation | (dv/dt)c | MIN 10 | V/s | Tj=125 |
| STATIC CHARACTERISTICS | ||||
| Peak On-State Voltage | VTM | MAX 1.55 | V | ITM=60A, tp=380s, Tj=25 |
| Threshold Voltage | VTO | MAX 0.86 | V | Tj=125 |
| Dynamic Resistance | Rd | MAX 6.4 | m | Tj=125 |
| Repetitive Peak Off-Statte Current | IDRM/ IRRM | MAX 10 A (Tj=25) MAX 5 mA (Tj=125) | VDRM=VRRM | |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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