| Holding Current (Ih) | 5mA |
| Current - Gate Trigger(Igt) | 200uA |
| Voltage - On State(Vtm) | 1.7V |
| Current - On State(It(RMS)) | 800mA |
| Peak off - state voltage(Vdrm) | 800V |
| SCR Type | - |
| Operating Temperature | -40℃~+125℃ |
| Gate Trigger Voltage (Vgt) | 800mV |
| Description | 5mA 200uA 800V SOT-223 SCRs RoHS |
| Mfr. Part # | S8X8TSRP |
| Package | SOT-223 |
| Model Number | S8X8TSRP |
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Product Specification
| Holding Current (Ih) | 5mA | Current - Gate Trigger(Igt) | 200uA |
| Voltage - On State(Vtm) | 1.7V | Current - On State(It(RMS)) | 800mA |
| Peak off - state voltage(Vdrm) | 800V | SCR Type | - |
| Operating Temperature | -40℃~+125℃ | Gate Trigger Voltage (Vgt) | 800mV |
| Description | 5mA 200uA 800V SOT-223 SCRs RoHS | Mfr. Part # | S8X8TSRP |
| Package | SOT-223 | Model Number | S8X8TSRP |
The Littelfuse EV Series Sensitive SCRs are 0.8 Amp devices featuring a small die planar construction for high static dv/dt and lower turn-off time (tq). They are specifically designed for GFCI (Ground Fault Circuit Interrupter) and Gas Ignition applications, offering glass-passivated junctions for long-term reliability and parametric stability. Key advantages include surge current capability, blocking voltage up to 800V, high dv/dt noise immunity, and sensitive gate for direct microprocessor interface.
| Parameter | TO-92 (TC=55C) | SOT-89 (TC=60C) | SOT-223 (TL=60C) | Unit |
| RMS on-state current (IT(RMS)) | 0.8 | 0.8 | 0.8 | A |
| Average on-state current (IT(AV)) | 0.51 | 0.51 | 0.51 | A |
| Non repetitive surge peak on-state current (ITSM) (F=50Hz) | 8 | 8 | 8 | A |
| Non repetitive surge peak on-state current (ITSM) (F=60Hz) | 10 | 10 | 10 | A |
| I2t Value for fusing (tp = 10 ms, F = 50 Hz) | 0.32 | 0.32 | 0.32 | As |
| I2t Value for fusing (tp = 8.3 ms, F = 60 Hz) | 0.41 | 0.41 | 0.41 | As |
| Critical rate of rise of on-state current (di/dt) (IG = 10mA, TJ = 125C) | 50 | 50 | 50 | A/s |
| Peak Gate Current (IGM) (tp = 10 s, TJ = 125C) | 1.0 | 1.0 | 1.0 | A |
| Average gate power dissipation (PG(AV)) (TJ = 125C) | 0.1 | 0.1 | 0.1 | W |
| Storage junction temperature range (Tstg) | -40 to 150 | C | ||
| Operating junction temperature range (TJ) | -40 to 125 | C | ||
| Blocking voltage (VDRM/VRRM) | 400 to 800 | V | ||
| Sensitive gate trigger current (IGT) | 5 to 200 | A | ||
| Turn-Off Time (tq) (TJ = 25C @ 600 V, RGK =1 k) | 25 | s | ||
| Symbol | Description | Test Conditions | SxX8yS1 Limit Value | SxX8yS2 Limit Value | SxX8yS Limit Value | Unit |
| IGT | DC Gate Trigger Current | VD = 6V, RL = 100 | MIN. 0.5, MAX. 5 | MIN. 1, MAX. 50 | MIN. 15, MAX. 200 | A |
| VGT | DC Gate Trigger Voltage | VD = 6V, RL = 100 | MAX. 0.8 | V | ||
| VGRM | Peak Reverse Gate Voltage | IRG = 10A | MIN. 5 | V | ||
| IH | Holding Current | RGK = 1 K, Initial Current = 20mA | MAX. 5 | mA | ||
| (dv/dt)s | Critical Rate-of-Rise of Off-State Voltage | TJ = 125C, VD = VDRM/VRRM, Exp. Waveform, RGK =1 k | MIN. 75 | V/s | ||
| VGD | Gate Non-Trigger Voltage | VD = VDRM, RGK =1 k, TJ = 25C | MIN. 0.2 | V | ||
| tq | Turn-Off Time | TJ = 25C @ 600 V, RGK =1 k | MAX. 30 | MAX. 25 | MAX. 25 | s |
| tgt | Turn-On Time | IG=10mA, PW = 15sec, IT = 1.6A(pk) | TYP. 2.0 | s | ||
| Symbol | Description | Test Conditions | Limit Value | Unit |
| VTM | Peak On-State Voltage | ITM = 1.6A (pk) | MAX. 1.70 | V |
| IDRM | Off-State Current, Peak Repetitive | TJ = 25C @ VD = VDRM, RGK =1 k | MAX. 3 | A |
| IDRM | Off-State Current, Peak Repetitive | TJ = 125C @ VD = VDRM, RGK =1 k | MAX. 500 | A |
| Rth(j-c) | Junction to case (AC) | IT = 0.8A (RMS), 60Hz AC resistive load condition, 100% conduction. | TO-92: 75 C/W; SOT-223: 30 C/W; SOT-89: 50 C/W | C/W |
| Rth(j-a) | Junction to ambient | IT = 0.8A (RMS) | TO-92: 150 C/W; SOT-223: 60 C/W; SOT-89: 90 C/W | C/W |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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