Hefei Purple Horn E-Commerce Co., Ltd.
| Holding Current (Ih) | 6mA |
| Current - Gate Trigger(Igt) | 1mA |
| Voltage - On State(Vtm) | 1.9V |
| Average Gate Power Dissipation (PG(AV)) | - |
| Current - On State(It(RMS)) | 12A |
| Peak off - state voltage(Vdrm) | 600V |
| Current - Surge(Itsm@f) | 100A@60Hz |
| SCR Type | - |
| Gate Trigger Voltage (Vgt) | 1V |
| Operating Temperature | -40℃~+110℃ |
| Description | 600V 12A Surface Mount TO-252(DPAK) |
| Mfr. Part # | MCR12DSNT4G |
| Package | TO-252(DPAK) |
| Model Number | MCR12DSNT4G |
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Product Specification
| Holding Current (Ih) | 6mA | Current - Gate Trigger(Igt) | 1mA |
| Voltage - On State(Vtm) | 1.9V | Average Gate Power Dissipation (PG(AV)) | - |
| Current - On State(It(RMS)) | 12A | Peak off - state voltage(Vdrm) | 600V |
| Current - Surge(Itsm@f) | 100A@60Hz | SCR Type | - |
| Gate Trigger Voltage (Vgt) | 1V | Operating Temperature | -40℃~+110℃ |
| Description | 600V 12A Surface Mount TO-252(DPAK) | Mfr. Part # | MCR12DSNT4G |
| Package | TO-252(DPAK) | Model Number | MCR12DSNT4G |
The MCR12DSM and MCR12DSN are surface mount thyristors designed for high volume, low cost, industrial and consumer applications. They feature a passivated die surface for reliability, low level triggering and holding characteristics, and are UL recognized with a V-0 flammability rating. These devices are suitable for applications such as motor control, process control, temperature, light and speed control, CDI (Capacitive Discharge Ignition), and small engines.
| Rating | Symbol | MCR12DSM | MCR12DSN | Unit | Notes |
| Peak Repetitive OffState Voltage | VDRM / VRRM | 600 | 800 | V | (TC = 40 to +110C, Sine Wave, 50 to 60 Hz, RGK = 1 k ) |
| OnState RMS Current | IT(RMS) | 12 | A | (180 Conduction Angles; TC = 75C) | |
| Average On-State Current | IT (AV) | 7.6 | A | (180 Conduction Angles; TC = 75C) | |
| Non-Repetitive Surge Current | ITSM | 100 | A | (1/2 Cycle, Sine Wave 60 Hz, TJ = 110C) | |
| Circuit Fusing Consideration | I2t | 41 | As | (t = 8.3 ms) | |
| Forward Peak Gate Power | PGM | 5.0 | W | (Pulse Width 1.0 sec, TC= 75C) | |
| Forward Average Gate Power | PG (AV) | 0.5 | W | (t = 8.3 ms, TC = 75C) | |
| Forward Peak Gate Current | IGM | 2.0 | A | (Pulse Width 1.0 sec, TC= 75C) | |
| Operating Junction Temperature Range | TJ | -40 to +110 | C | ||
| Storage Temperature Range | Tstg | -40 to +150 | C | ||
| Thermal Resistance, JunctiontoCase | RJC | 2.2 | C/W | ||
| Thermal Resistance, JunctiontoAmbient | RJA | 88 | C/W | ||
| Thermal Resistance, JunctiontoAmbient | RJA | 80 | C/W | (Note 2) | |
| Maximum Lead Temperature for Soldering Purposes | TL | 260 | C | (Note 3) | |
| Peak Repetitive Forward or Reverse Blocking Current | IDRM / IRRM | - | 10 / 500 | A | TJ = 25C / 110C |
| Peak Reverse Gate Blocking Voltage | VGRM | 10 - 18 | V | (IGR = 10 A) | |
| Peak Reverse Gate Blocking Current | IGRM | _ _ 1.2 | A | (VGR = 10 V) | |
| Peak Forward OnState Voltage | VTM | 1.3 - 1.9 | V | (Note 5), (ITM = 20 A) | |
| Gate Trigger Voltage (Pulse) | IGT | 5.0 - 200 / 300 | A | TJ = 25C / 40C (Note 6) | |
| Gate Trigger Voltage (Continuous dc) | VGT | 0.45 - 1.0 / 1.5 | V | TJ = 25C / 40C (Note 6) | |
| Holding Current | IH | 0.5 - 6.0 / 10 | mA | TJ = 25C / 40C | |
| Latching Current | IL | 0.5 - 6.0 / 10 | mA | TJ = 25C / 40C | |
| Turn-On Time | tgt | _ 2.0 - 5.0 | s | ||
| Critical Rate of Rise of OffState Voltage | dv/dt | 2.0 - 10 | V/s | (Note 4) | |
| Critical Rate of Rise of OnState Current | di/dt | 50 - 100 | A/s | ||
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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