| Holding Current (Ih) | 40mA |
| Current - Gate Trigger(Igt) | - |
| Voltage - On State(Vtm) | 1.9V |
| Current - On State(It(RMS)) | 12A |
| Peak off - state voltage(Vdrm) | 800V |
| SCR Type | 1 SCR |
| Gate Trigger Voltage (Vgt) | 1V |
| Operating Temperature | - |
| Description | 40mA 800V 1 SCR TO-252-2(DPAK) SCRs RoHS |
| Mfr. Part # | MCR12DCNT4G |
| Package | TO-252-2(DPAK) |
| Model Number | MCR12DCNT4G |
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Product Specification
| Holding Current (Ih) | 40mA | Current - Gate Trigger(Igt) | - |
| Voltage - On State(Vtm) | 1.9V | Current - On State(It(RMS)) | 12A |
| Peak off - state voltage(Vdrm) | 800V | SCR Type | 1 SCR |
| Gate Trigger Voltage (Vgt) | 1V | Operating Temperature | - |
| Description | 40mA 800V 1 SCR TO-252-2(DPAK) SCRs RoHS | Mfr. Part # | MCR12DCNT4G |
| Package | TO-252-2(DPAK) | Model Number | MCR12DCNT4G |
The MCR12DCM and MCR12DCN are surface-mount thyristors designed for half-wave AC control applications. They are suitable for motor controls, heating controls, and power supplies, or any application requiring silicon gate-controlled devices for half-wave operation. Key features include a small size, passivated die for reliability, low-level triggering and holding characteristics, and epoxy that meets UL 94 V-0. These devices also offer high ESD ratings.
| Rating Symbol | MCR12DCM | MCR12DCN | Unit | Description |
| VDRM, VRRM | 600 | 800 | V | Peak Repetitive Off-State Voltage (Note 1) (-40 to 110C, Sine Wave, 50 to 60 Hz, Gate Open) |
| IT (RMS) | 12 | A | On-State RMS Current (180 Conduction Angles; TC = 90C) | |
| IT(AV) | 7.8 | A | Average On-State Current (180 Conduction Angles; TC = 90C) | |
| ITSM | 100 | A | Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 125C) | |
| I2t | 41 | Asec | Circuit Fusing Consideration (t = 8.3 ms) | |
| PGM | 5.0 | W | Forward Peak Gate Power (Pulse Width 10 sec, TC = 90C) | |
| PGM (AV) | 0.5 | W | Forward Average Gate Power (t = 8.3 msec, TC = 90C) | |
| IGM | 2.0 | A | Forward Peak Gate Current (Pulse Width 1.0 sec, TC= 90C) | |
| TJ | -40 to 110 | C | Operating Junction Temperature Range | |
| Tstg | -40 to 150 | C | Storage Temperature Range | |
| RJC | 2.2 | C/W | Thermal Resistance, Junction-to-Case | |
| RJA | 88 | C/W | Thermal Resistance, Junction-to-Ambient | |
| RJA (Note 2) | 80 | C/W | Thermal Resistance, Junction-to-Ambient | |
| TL | 260 | C | Maximum Lead Temperature for Soldering Purposes 1/8" from Case for 10 Seconds | |
| IDRM, IRRM | 0.01 (TJ = 25C), 5.0 (TJ = 125C) | mA | Peak Repetitive Forward or Reverse Blocking Current (VAK = Rated VDRM or VRRM, Gate Open) | |
| dv/dt | 50 to 200 | V/s | Critical Rate of Rise of Off-State Voltage (VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125C) | |
| VTM | 1.3 to 1.9 | V | Peak Forward On-State Voltage (Note 2) (ITM = 16 A) | |
| IGT | 0.5 to 1.0 (TJ = 25C), 2.0 (TJ = 40C) | mA | Gate Trigger Current (Continuous dc) (VD = 12 V; RL = 100 ) | |
| VGT | 0.3 to 1.0 (TJ = 25C), 1.5 (TJ = 40C) | V | Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 ) | |
| tgt | 0.2 | V | Gate Non-Trigger Voltage (VD = 12 V, RL = 100 ) TJ = 125C | |
| IH | 4.0 to 40 (TJ = 25C), 80 (TJ = 40C) | mA | Holding Current (VD = 12 V, Gate Open, Initiating Current = 200 mA) | |
| IL | 4.0 to 40 (VD = 12 V, IG = 20 A, TJ = 25C), 80 (VD = 12 V, IG = 40 A, TJ = -40C) | mA | Latch Current | |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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