Hefei Purple Horn E-Commerce Co., Ltd.
| Holding Current (Ih) | 40mA |
| Current - Gate Trigger(Igt) | 7mA |
| Voltage - On State(Vtm) | 1.9V |
| Average Gate Power Dissipation (PG(AV)) | 500mW |
| Current - On State(It(RMS)) | 12A |
| Peak off - state voltage(Vdrm) | 600V |
| Current - Surge(Itsm@f) | 100A |
| SCR Type | 1 SCR |
| Gate Trigger Voltage (Vgt) | 1V |
| Operating Temperature | -40℃~125℃ |
| Description | SCR 600V 12A Surface Mount TO-252(DPAK) |
| Mfr. Part # | MCR12DCMT4G |
| Package | TO-252(DPAK) |
| Model Number | MCR12DCMT4G |
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Product Specification
| Holding Current (Ih) | 40mA | Current - Gate Trigger(Igt) | 7mA |
| Voltage - On State(Vtm) | 1.9V | Average Gate Power Dissipation (PG(AV)) | 500mW |
| Current - On State(It(RMS)) | 12A | Peak off - state voltage(Vdrm) | 600V |
| Current - Surge(Itsm@f) | 100A | SCR Type | 1 SCR |
| Gate Trigger Voltage (Vgt) | 1V | Operating Temperature | -40℃~125℃ |
| Description | SCR 600V 12A Surface Mount TO-252(DPAK) | Mfr. Part # | MCR12DCMT4G |
| Package | TO-252(DPAK) | Model Number | MCR12DCMT4G |
The MCR12DCM and MCR12DCN are surface-mount thyristors designed for half-wave AC control applications. They are suitable for motor controls, heating controls, and power supplies, or wherever silicon gate-controlled devices are needed. Key features include a small size, passivated die for reliability, low-level triggering and holding characteristics, and UL recognized compound meeting flammability rating V-0. These thyristors also offer high ESD ratings.
| Rating Symbol | Parameter | MCR12DCM | MCR12DCN | Unit | Notes |
| VDRM | Peak Repetitive OffState Voltage | 600 | - | V | ( 40 to 110C, Sine Wave, 50 to 60 Hz, Gate Open) |
| VRRM | Peak Repetitive OffState Voltage | - | 800 | V | ( 40 to 110C, Sine Wave, 50 to 60 Hz, Gate Open) |
| IT (RMS) | OnState RMS Current | 12 | A | (180 Conduction Angles; TC = 90C) | |
| IT(AV) | Average OnState Current | 7.8 | A | (180 Conduction Angles; TC = 90C) | |
| ITSM | Peak NonRepetitive Surge Current | 100 | A | (1/2 Cycle, Sine Wave 60 Hz, TJ = 125C) | |
| I2t | Circuit Fusing Consideration | 41 | Asec | (t = 8.3 ms) | |
| PGM | Forward Peak Gate Power | 5.0 | W | (Pulse Width 10 sec,TC = 90C) | |
| PGM (AV) | Forward Average Gate Power | 0.5 | W | (t = 8.3 msec, TC = 90C) | |
| IGM | Forward Peak Gate Current | 2.0 | A | (Pulse Width 1.0 sec, TC= 90C) | |
| TJ | Operating Junction Temperature Range | -40 to 125 | C | ||
| Tstg | Storage Temperature Range | -40 to 150 | C | ||
| Rating Symbol | Parameter | Value | Unit | Notes |
| RJC | Thermal Resistance, JunctiontoCase | 2.2 | C/W | |
| RJA | Thermal Resistance, JunctiontoAmbient | 88 | C/W | |
| RJA | Thermal Resistance, JunctiontoAmbient | 80 | C/W | (Note 2) |
| TL | Maximum Lead Temperature for Soldering Purposes | 260 | C | 1/8" from Case for 10 Seconds |
| Characteristic Symbol | Parameter | Min | Typ | Max | Unit | Notes |
| IDRM, IRRM | Peak Repetitive Forward or Reverse Blocking Current (Gate Open) | - | - | 0.01 | mA | TJ = 25C |
| IDRM, IRRM | Peak Repetitive Forward or Reverse Blocking Current (Gate Open) | - | - | 5.0 | mA | TJ = 125C |
| VTM | Peak Forward OnState Voltage | - | 1.3 | 1.9 | V | (ITM = 16 A) (Note 2) |
| IGT | Gate Trigger Current (Continuous dc) | 2.0 | 7.0 | 20 | mA | (VD = 12 V; RL = 100 ), TJ = 25C |
| IGT | Gate Trigger Current (Continuous dc) | - | - | 40 | mA | (VD = 12 V; RL = 100 ), TJ = 40C |
| VGT | Gate Trigger Voltage (Continuous dc) | 0.5 | 0.65 | 1.0 | V | (VD = 12 V, RL = 100 ), TJ = 25C |
| VGT | Gate Trigger Voltage (Continuous dc) | - | - | 2.5 | V | (VD = 12 V, RL = 100 ), TJ = 40C |
| VGD | Gate NonTrigger Voltage | 0.2 | - | - | V | (VD = 12 V, RL = 100 ), TJ = 125C |
| IH | Holding Current | 4.0 | 22 | 40 | mA | (VD = 12 V, Gate Open, Initiating Current = 200 mA), TJ = 25C |
| IH | Holding Current | - | - | 80 | mA | (VD = 12 V, Gate Open, Initiating Current = 200 mA), TJ = 40C |
| IL | Latch Current | 4.0 | 22 | 40 | mA | (VD = 12 V, IG = 20 A, TJ = 25C) |
| IL | Latch Current | - | - | 80 | mA | (VD = 12 V, IG = 40 A, TJ = -40C) |
| dv/dt | Critical Rate of Rise of OffState Voltage | 50 | 200 | - | V/s | (VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125C) |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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