| Holding Current (Ih) | 50mA |
| Current - Gate Trigger(Igt) | 28mA |
| Voltage - On State(Vtm) | 1.6V |
| Current - On State(It(RMS)) | 29A |
| Peak off - state voltage(Vdrm) | 1.2kV |
| SCR Type | 1 SCR |
| Operating Temperature | -40℃~+125℃ |
| Gate Trigger Voltage (Vgt) | 1.5V |
| Description | SCR 1.2kV 29A Through Hole TO-220AB |
| Mfr. Part # | CS19-12HO1 |
| Package | TO-220AB |
| Model Number | CS19-12HO1 |
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Product Specification
| Holding Current (Ih) | 50mA | Current - Gate Trigger(Igt) | 28mA |
| Voltage - On State(Vtm) | 1.6V | Current - On State(It(RMS)) | 29A |
| Peak off - state voltage(Vdrm) | 1.2kV | SCR Type | 1 SCR |
| Operating Temperature | -40℃~+125℃ | Gate Trigger Voltage (Vgt) | 1.5V |
| Description | SCR 1.2kV 29A Through Hole TO-220AB | Mfr. Part # | CS19-12HO1 |
| Package | TO-220AB | Model Number | CS19-12HO1 |
The CS19-08ho1 is a high-efficiency thyristor designed for line frequency applications. Featuring a planar passivated chip for long-term stability, it is suitable for a wide range of power control and conversion tasks including line rectifying, AC motor control, DC motor control, and power converters. The device comes in a standard TO-220 package and is RoHS compliant.
| Symbol | Definition | Conditions | min. | typ. | max. | Unit |
| VDRM/VRRM | max. repetitive reverse/forward blocking voltage | 800 | V | |||
| IT(AV) | RMS current | 20 | A | |||
| It | value for fusing | t = 10 ms; (50 Hz), sine | 160 | As | ||
| It | value for fusing | t = 8,3 ms; (60 Hz), sine | 155 | As | ||
| VT | forward voltage drop | I = 20 A; T = 25C | 1.31 | 1.65 | V | |
| rT | slope resistance for power loss calculation only | I = 20 A; T = 25C | 22 | m | ||
| Ptot | total power dissipation | T = 25C | 170 | W | ||
| RthJC | thermal resistance junction to case | 0.7 | K/W | |||
| VGT | gate trigger voltage | I = 6 V; T = 25C | 0.86 | 1.5 | V | |
| IGT | gate trigger current | I = 6 V; T = 25C | 2.5 | 50 | mA | |
| IL | latching current | T = 25C | 75 | mA | ||
| IH | holding current | T = 25C | 50 | mA | ||
| tq | turn-off time | I = 20 A; V = VDRM; t = 200 s; non-repet. | 200 | s | ||
| ITSM | max. forward surge current | t = 10 ms; (50 Hz), sine | 180 | A | ||
| ITSM | max. forward surge current | t = 8,3 ms; (60 Hz), sine | 165 | A | ||
| PGM | max. gate power dissipation | t = 30 s; T = 125C | 5 | W | ||
| PGAV | average gate power dissipation | T = 125C | 0.5 | W | ||
| CJ | junction capacitance | V = 10 V; f = 1 MHz; T = 25C | 300 | pF | ||
| (dv/dt)cr | critical rate of rise of voltage | T = 150C; V = VDRM; method 1 (linear voltage rise) | 500 | V/s | ||
| (di/dt)cr | critical rate of rise of current | repetitive, I = 150 A; T = 150C; f = 50 Hz | 150 | A/s | ||
| TVJ | virtual junction temperature | -40 | 125 | C | ||
| Tstg | storage temperature | -40 | 150 | C |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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