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Hefei Purple Horn E-Commerce Co., Ltd.

  • China,Hefei ,Anhui
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China Built in resistor digital transistor ROHM DTC623TKT146 NPN type designed for
China Built in resistor digital transistor ROHM DTC623TKT146 NPN type designed for

  1. China Built in resistor digital transistor ROHM DTC623TKT146 NPN type designed for

Built in resistor digital transistor ROHM DTC623TKT146 NPN type designed for

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Emitter-Base Voltage VEBO 12V
Input Resistor 2.2kΩ
Number -
Collector - Emitter Voltage VCEO 20V
Description Pre-Biased Bipolar Transistor (BJT) 20V 600mA 200mW Surface Mount SOT-346
Mfr. Part # DTC623TKT146
Package SOT-346
Model Number DTC623TKT146

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Product Specification

Emitter-Base Voltage VEBO 12V Input Resistor 2.2kΩ
Number - Collector - Emitter Voltage VCEO 20V
Description Pre-Biased Bipolar Transistor (BJT) 20V 600mA 200mW Surface Mount SOT-346 Mfr. Part # DTC623TKT146
Package SOT-346 Model Number DTC623TKT146

Product Overview

The DTC623TU / DTC623TK are NPN digital transistors featuring built-in resistors, offering the advantages of regular digital transistors along with enhanced performance for specific applications. These transistors are designed with a low saturation voltage, typically VCE (sat) = 40mV at IC / IB = 50mA / 2.5mA, making them ideal for muting circuits. They also support high current levels, with IC up to 600mA. The devices are available in UMT3 (<SC-70>) and SMT3 (<SC-59>) packages.

Product Attributes

  • Brand: ROHM CO.,LTD.
  • Type: NPN digital transistor (Built-in resistor type)
  • Abbreviated Symbol: R02

Technical Specifications

Parameter Symbol Min. Typ. Max. Unit Conditions
Absolute Maximum Ratings (Ta=25C)
Collector-base voltage VCBO 20 V
Collector-emitter voltage VCEO 20 V
Emitter-base voltage VEBO 12 V
Collector current IC 600 mA
Collector power dissipation PC 200 mW
Junction temperature Tj 150 C
Storage temperature Tstg -55 150 C
Electrical Characteristics (Ta=25C)
Collector-base breakdown voltage BVCBO 20 V IC=50A
Collector-emitter breakdown voltage BVCEO 20 V IC=1mA
Emitter-base breakdown voltage BVEBO 12 V IE=50A
Collector cutoff current ICBO 0.5 A VCB=20V
Collector-emitter saturation voltage VCE (sat) 40 150 mV IC=50mA, IB=2.5mA
Emitter cutoff current IEBO 0.5 A VEB=12V
DC current transfer ratio hFE 820 2700 VCE=5V, IC=50mA
Transition frequency fT 150 MHz VCE=5V, IC=50mA
Input resistance R1 1.54 2.2 2.86 k VI=5V, RL=1k, f=1kHz
Output "ON" resistance Ron 0.4
Packaging Type Taping Code Package Basic Ordering Unit (pieces)
UMT3 T106 DTC623TU 3000
SMT3 T146 DTC623TK 3000

2410010302_ROHM-DTC623TKT146_C122996.pdf

Company Details

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,

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 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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