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Hefei Purple Horn E-Commerce Co., Ltd.

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China Switching inverter and driver circuit silicon transistor TOSHIBA RN4903 LF CT
China Switching inverter and driver circuit silicon transistor TOSHIBA RN4903 LF CT

  1. China Switching inverter and driver circuit silicon transistor TOSHIBA RN4903 LF CT

Switching inverter and driver circuit silicon transistor TOSHIBA RN4903 LF CT

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DC Current Gain 70@10mA,5V
Emitter-Base Voltage VEBO 10V
Current - Collector(Ic) 100mA
Input Resistor 28.6kΩ
Number 1 PNP Pre-Biased Transistor, 1 NPN
Pd - Power Dissipation 200mW
Collector - Emitter Voltage VCEO 50V
Description Pre-Biased Bipolar Transistor (BJT) 1 PNP Pre-Biased Transistor, 1 NPN 50V 100mA 200mW Surface Mount SOT-363
Mfr. Part # RN4903,LF(CT
Package SOT-363
Model Number RN4903,LF(CT

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Product Specification

DC Current Gain 70@10mA,5V Emitter-Base Voltage VEBO 10V
Current - Collector(Ic) 100mA Input Resistor 28.6kΩ
Number 1 PNP Pre-Biased Transistor, 1 NPN Pd - Power Dissipation 200mW
Collector - Emitter Voltage VCEO 50V Description Pre-Biased Bipolar Transistor (BJT) 1 PNP Pre-Biased Transistor, 1 NPN 50V 100mA 200mW Surface Mount SOT-363
Mfr. Part # RN4903,LF(CT Package SOT-363
Model Number RN4903,LF(CT

Product Overview

The RN4903 is a silicon PNP/NPN epitaxial bipolar transistor featuring an integrated bias resistor. This design simplifies external circuitry, reducing system size and assembly time. It is suitable for switching, inverter circuits, interfacing, and driver circuit applications.

Product Attributes

  • Brand: Toshiba
  • Certifications: AEC-Q101 qualified
  • Package Type: US6 (ultra super mini type with 6 leads)

Technical Specifications

Collector-base voltage (VCBO)Collector-emitter voltage (VCEO)Emitter-base voltage (VEBO)Collector current (IC)Collector power dissipation (PC)Junction temperature (Tj)Storage temperature (Tstg)
Q1 Absolute Maximum Ratings-50 V-50 V-10 V-100 mA200 mW150 -55 to 150
Q2 Absolute Maximum Ratings50 V50 V10 V100 mA
Collector cut-off current (ICBO)Collector cut-off current (ICEO)Emitter cut-off current (IEBO)DC current gain (hFE)Collector-emitter saturation voltage (VCE(sat))Input voltage (ON) (VI(ON))Input voltage (off) (VI(off))Transition frequency (fT)Collector output capacitance (Cob)Input resistance (R1)Resistor ratio (R1/R2)
Q1 Electrical CharacteristicsMin: -100 nA
Max: -500 nA
Min: -0.17 mA
Max: -0.33 mA
Min: -100 nAMin: 70
Typ: 200
Typ: -0.1 V
Max: -0.3 V
Typ: -1.3 VTyp: -1.0 VTyp: 6 MHzTyp: 3 pFMin: 15.4 k
Typ: 22 k
Max: 28.6 k
Min: 0.9
Typ: 1.0
Max: 1.1
Q2 Electrical CharacteristicsMin: 100 nA
Max: 500 nA
Min: 0.17 mA
Max: 0.33 mA
Min: 100 nAMin: 70
Typ: 250
Typ: 0.1 V
Max: 0.3 V
Typ: 1.3 VTyp: 1.0 VTyp: 6 MHzTyp: 3 pF

2410121951_TOSHIBA-RN4903-LF-CT_C7421326.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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