| Output Voltage(VO(on)) | 300mV |
| Input Resistor | 2.86kΩ |
| Resistor Ratio | 21 |
| Number | - |
| Collector - Emitter Voltage VCEO | 50V |
| Description | Pre-Biased Bipolar Transistor (BJT) 50V 100mA 150mW Surface Mount SOT-353-5 |
| Mfr. Part # | UMG11NTR |
| Package | SOT-353-5 |
| Model Number | UMG11NTR |
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Product Specification
| Output Voltage(VO(on)) | 300mV | Input Resistor | 2.86kΩ |
| Resistor Ratio | 21 | Number | - |
| Collector - Emitter Voltage VCEO | 50V | Description | Pre-Biased Bipolar Transistor (BJT) 50V 100mA 150mW Surface Mount SOT-353-5 |
| Mfr. Part # | UMG11NTR | Package | SOT-353-5 |
| Model Number | UMG11NTR |
The EMG11 / UMG11N are dual digital transistors housed in compact SOT-553 (EMT5) or SOT-353 (UMT5) packages. These devices integrate two DTC123J chips, offering reduced mounting cost and area. They are designed for applications such as inverters, interfaces, and drivers, providing efficient switching capabilities with a maximum supply voltage of 50V and a maximum collector current of 100mA.
| Parameter | Symbol | Values | Unit | Notes | |||
|---|---|---|---|---|---|---|---|
| General Ratings | |||||||
| Supply voltage | VCC | 50 | V | ||||
| Input voltage | VIN | -5 to 12 | V | ||||
| Output current | IO | 100 | mA | ||||
| Collector current (MAX.) | IC(MAX) | 100 | mA | *1 | |||
| Power dissipation (EMG11) | PD | 150 | mW/Total | *2*3 | |||
| Power dissipation (UMG11N) | PD | 150 | mW/Total | *2*3 | |||
| Junction temperature | Tj | 150 | |||||
| Range of storage temperature | Tstg | -55 to +150 | |||||
| Electrical Characteristics (Ta = 25C) | |||||||
| Input voltage (VI(off)) | VI(off) | - | 0.5 | V | VCC = 5V, IO = 100A | ||
| Input voltage (VI(on)) | VI(on) | 1.1 | - | V | VO = 0.3V, IO = 5mA | ||
| Output voltage (VO(on)) | VO(on) | - | 100 | 300 | mV | IO = 5mA, II = 0.25mA | |
| Input current | II | - | 3.6 | mA | VI = 5V | ||
| Output current (IO(off)) | IO(off) | - | 500 | nA | VCC = 50V, VI = 0V | ||
| DC current gain | GI | 80 | - | - | VO = 5V, IO = 10mA | ||
| Input resistance | R1 | 1.54 | 2.2 | 2.86 | k | ||
| Resistance ratio | R2/R1 | 17 | 21 | 26 | - | ||
| Transition frequency | fT | - | 250 | - | MHz | VCE = 10V, IE = -5mA, f = 100MHz (*1) | |
| Packaging Specifications | |||||||
| Part No. | Package | Package size | Taping code | Reel size (mm) | Tape width (mm) | Basic ordering unit.(pcs) | Marking |
| EMG11 | SOT-553 (EMT5) | 1616 | T2R | 180 | 8 | 8000 | G11 |
| UMG11N | SOT-353 (UMT5) | 2021 | TR | 180 | 8 | 3000 | G11 |
*1 Characteristics of built-in transistor.
*2 Each terminal mounted on a reference land.
*3 120mW per element must not be exceeded.
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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