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Hefei Purple Horn E-Commerce Co., Ltd.

  • China,Hefei ,Anhui
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China Compact dual digital transistor ROHM UMG11NTR with 50V supply voltage and 100mA
China Compact dual digital transistor ROHM UMG11NTR with 50V supply voltage and 100mA

  1. China Compact dual digital transistor ROHM UMG11NTR with 50V supply voltage and 100mA

Compact dual digital transistor ROHM UMG11NTR with 50V supply voltage and 100mA

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Output Voltage(VO(on)) 300mV
Input Resistor 2.86kΩ
Resistor Ratio 21
Number -
Collector - Emitter Voltage VCEO 50V
Description Pre-Biased Bipolar Transistor (BJT) 50V 100mA 150mW Surface Mount SOT-353-5
Mfr. Part # UMG11NTR
Package SOT-353-5
Model Number UMG11NTR

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Product Specification

Output Voltage(VO(on)) 300mV Input Resistor 2.86kΩ
Resistor Ratio 21 Number -
Collector - Emitter Voltage VCEO 50V Description Pre-Biased Bipolar Transistor (BJT) 50V 100mA 150mW Surface Mount SOT-353-5
Mfr. Part # UMG11NTR Package SOT-353-5
Model Number UMG11NTR

Product Overview

The EMG11 / UMG11N are dual digital transistors housed in compact SOT-553 (EMT5) or SOT-353 (UMT5) packages. These devices integrate two DTC123J chips, offering reduced mounting cost and area. They are designed for applications such as inverters, interfaces, and drivers, providing efficient switching capabilities with a maximum supply voltage of 50V and a maximum collector current of 100mA.

Product Attributes

  • Brand: ROHM
  • Package Types: SOT-553 (EMT5), SOT-353 (UMT5)

Technical Specifications

Parameter Symbol Values Unit Notes
General Ratings
Supply voltage VCC 50 V
Input voltage VIN -5 to 12 V
Output current IO 100 mA
Collector current (MAX.) IC(MAX) 100 mA *1
Power dissipation (EMG11) PD 150 mW/Total *2*3
Power dissipation (UMG11N) PD 150 mW/Total *2*3
Junction temperature Tj 150
Range of storage temperature Tstg -55 to +150
Electrical Characteristics (Ta = 25C)
Input voltage (VI(off)) VI(off) - 0.5 V VCC = 5V, IO = 100A
Input voltage (VI(on)) VI(on) 1.1 - V VO = 0.3V, IO = 5mA
Output voltage (VO(on)) VO(on) - 100 300 mV IO = 5mA, II = 0.25mA
Input current II - 3.6 mA VI = 5V
Output current (IO(off)) IO(off) - 500 nA VCC = 50V, VI = 0V
DC current gain GI 80 - - VO = 5V, IO = 10mA
Input resistance R1 1.54 2.2 2.86 k
Resistance ratio R2/R1 17 21 26 -
Transition frequency fT - 250 - MHz VCE = 10V, IE = -5mA, f = 100MHz (*1)
Packaging Specifications
Part No. Package Package size Taping code Reel size (mm) Tape width (mm) Basic ordering unit.(pcs) Marking
EMG11 SOT-553 (EMT5) 1616 T2R 180 8 8000 G11
UMG11N SOT-353 (UMT5) 2021 TR 180 8 3000 G11

*1 Characteristics of built-in transistor.
*2 Each terminal mounted on a reference land.
*3 120mW per element must not be exceeded.


2203101903_ROHM-UMG11NTR_C2981759.pdf

Company Details

Bronze Gleitlager

,

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 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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