| Capacitance Ratio | 10.9@C0.3V/C4.7V |
| Diode Configuration | Independent |
| DC Reverse Voltage(Vr) | 15V |
| Diode Capacitance | 2.8pF@4.7V,1MHz |
| Description | 10.9@C0.3V/C4.7V Independent 15V 2.8pF@4.7V,1MHz SC-79 Variable Capacitance (Varicaps, Varactors) RoHS |
| Mfr. Part # | BBY6502VH6327XTSA1 |
| Package | SC-79 |
| Model Number | BBY6502VH6327XTSA1 |
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Product Specification
| Capacitance Ratio | 10.9@C0.3V/C4.7V | Diode Configuration | Independent |
| DC Reverse Voltage(Vr) | 15V | Diode Capacitance | 2.8pF@4.7V,1MHz |
| Description | 10.9@C0.3V/C4.7V Independent 15V 2.8pF@4.7V,1MHz SC-79 Variable Capacitance (Varicaps, Varactors) RoHS | Mfr. Part # | BBY6502VH6327XTSA1 |
| Package | SC-79 | Model Number | BBY6502VH6327XTSA1 |
The BBY65-02V is a high Q hyperabrupt silicon tuning diode designed for low tuning voltage operation in mobile communications equipment. It is ideal for low frequency control elements such as TCXOS and VCXOS, offering a high capacitance ratio and good C-V linearity. This Pb-free (RoHS compliant) package component ensures reliable performance across a wide operating temperature range.
| Parameter | Symbol | Value | Unit | Notes |
|---|---|---|---|---|
| Type | BBY65-02V | |||
| Package | SC79 | |||
| Configuration | single | |||
| Inductance (LS) | LS | 0.6 | nH | |
| Marking | F | |||
| Maximum Ratings at TA = 25C, unless otherwise specified | ||||
| Diode reverse voltage | VR | 15 | V | |
| Forward current | IF | 50 | mA | |
| Operating temperature range | Top | -55 ... 150 | C | |
| Storage temperature | Tstg | -55 ... 150 | C | |
| Electrical Characteristics at TA = 25C, unless otherwise specified | ||||
| DC Characteristics | ||||
| Reverse current (VR = 10 V) | IR | - | nA | min. |
| Reverse current (VR = 10 V, TA = 85 C) | IR | - | nA | typ. |
| Reverse current (VR = 10 V, TA = 85 C) | IR | 100 | nA | max. |
| AC Characteristics | ||||
| Diode capacitance (VR = 0.3 V, f = 1 MHz) | CT | 28.2 | pF | min. |
| Diode capacitance (VR = 0.3 V, f = 1 MHz) | CT | 29.5 | pF | typ. |
| Diode capacitance (VR = 0.3 V, f = 1 MHz) | CT | 30.8 | pF | max. |
| Diode capacitance (VR = 1 V, f = 1 MHz) | CT | 20.25 | pF | typ. |
| Diode capacitance (VR = 2 V, f = 1 MHz) | CT | 9.8 | pF | typ. |
| Diode capacitance (VR = 3 V, f = 1 MHz) | CT | 4.45 | pF | typ. |
| Diode capacitance (VR = 4.7 V, f = 1 MHz) | CT | 2.7 | pF | typ. |
| Diode capacitance (VR = 4.7 V, f = 1 MHz) | CT | 2.8 | pF | max. |
| Capacitance ratio (VR = 0.3 V, VR = 4.7 V) | CT0.3/ CT4.7 | 10 | - | min. |
| Capacitance ratio (VR = 0.3 V, VR = 4.7 V) | CT0.3/ CT4.7 | 10.9 | - | typ. |
| Capacitance ratio (VR = 1 V, VR = 3 V) | CT1/CT3 | 4.55 | - | typ. |
| Series resistance (VR = 1 V, f = 470 MHz) | rS | 0.6 | typ. | |
| Series resistance (VR = 1 V, f = 470 MHz) | rS | 0.9 | max. | |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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