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{"title":"Plastic Encapsulate TRIAC JSCJ BTA41 800BW with NPNPN 5 layer Structure and High","imgUrl":"https:\/\/img.chinax.com\/nimg\/8b\/4f\/21bcead694a6fb2eb767d4cac09b-200x200-1\/plastic_encapsulate_triac_jscj_bta41_800bw_with_npnpn_5_layer_structure_and_high_junction_temperature.jpg","attrs":{"Description":"TO-3P-3 TRIACs RoHS","Mfr. Part #":"BTA41-800BW","Model Number":"BTA41-800BW","Package":"TO-3P-3"}}
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The CENTRAL SEMICONDUCTOR 2N3669 and 2N3670 are hermetically sealed Silicon Controlled Rectifiers (SCRs) designed for sensing circuit applications and control systems. These devices offer robust performance with ratings up to 16 Amps and voltages of 400 to 600 Volts. Higher voltage devices and specific electrical selections are available upon special order.
Product Attributes
Brand: CENTRAL SEMICONDUCTOR
Case Style: TO-3 50 MIL CASE
Material: SILICON
Packaging: Hermetically sealed
Marking: FULL PART NUMBER
Technical Specifications
Symbol
2N3669
2N3670
Units
Description
VRRM
200
400
V
Peak Repetitive Off-State Voltage
VDRM
400
600
V
Peak Repetitive Off-State Voltage
IT(RMS)
16
A
RMS On-State Current (TC=90C)
ITSM
200
A
Peak One Cycle Surge Current (60Hz, TC=80C)
IGM
4.0
A
Peak Gate Current
PG(AV)
0.5
W
Average Gate Power Dissipation
TJ, Tstg
-40 to +125
C
Operating and Storage Junction Temperature
JC
1.7
C/W
Thermal Resistance
IRRM
1.0
mA
(VR=Rated VRRM, TC=100C)
IDRM
2.0
mA
(VD=Rated VDRM, TC=100C)
IGT
1.0
40
mA
(VD=7.0V)
IH
0.5
50
mA
(RG=1.0K)
VTM
1.8
V
(IT=25A)
VGT
2.0
V
(VD=7.0V)
dv/dt
10 to 400
V/s
(VD=VDRM, RG=1.0k, TC=100C)
tgd
500
ns
(IG=125mA, diG/dt=1.25A/s)
tq
50
s
(VD=VDRM, VR=35V, IT=10A, TC=90C)
Lead Code: 1) Gate, 2) Cathode, Case) Anode
Note: The 2N3669 and 2N3670 Silicon Controlled Rectifiers are discontinued and classified as End of Life (EOL). Last purchase orders are accepted six (6) months from the notice date, with final shipments twelve (12) months from the notice date. Minimum order quantities may apply. Replacement products are not specified.