| Holding Current (Ih) | 4mA |
| Current - Gate Trigger(Igt) | 200uA |
| Voltage - On State(Vtm) | 1.55V |
| Average Gate Power Dissipation (PG(AV)) | 100mW |
| Current - On State(It(RMS)) | 2A |
| Peak off - state voltage(Vdrm) | 600V |
| Current - Surge(Itsm@f) | 20A@50Hz |
| SCR Type | - |
| Operating Temperature | - |
| Gate Trigger Voltage (Vgt) | - |
| Description | 600V 2A Through Hole TO-92 |
| Mfr. Part # | 2P4M |
| Package | TO-92 |
| Model Number | 2P4M |
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Product Specification
| Holding Current (Ih) | 4mA | Current - Gate Trigger(Igt) | 200uA |
| Voltage - On State(Vtm) | 1.55V | Average Gate Power Dissipation (PG(AV)) | 100mW |
| Current - On State(It(RMS)) | 2A | Peak off - state voltage(Vdrm) | 600V |
| Current - Surge(Itsm@f) | 20A@50Hz | SCR Type | - |
| Operating Temperature | - | Gate Trigger Voltage (Vgt) | - |
| Description | 600V 2A Through Hole TO-92 | Mfr. Part # | 2P4M |
| Package | TO-92 | Model Number | 2P4M |
The 2P4M is a sensitive gate SCR (Silicon Controlled Rectifier) from Fuxinsemi, designed for applications requiring high shock loading capability and strong resistance to electromagnetic interference due to its high dv/dt rate. It is suitable for various power control applications including power chargers, T-tools, massagers, solid-state relays, and AC motor speed regulation.
| Parameter | Symbol | Test Condition | Value | Unit | Min | Max |
| Repetitive peak off-state voltage | VDRM | 600 | V | |||
| Repetitive peak reverse voltage | VRRM | 600 | V | |||
| RMS on-state current | IT(RMS) | 3 | A | |||
| Non repetitive surge peak on-state current (full cycle, F=50Hz) | ITSM | 20 | A | |||
| I2t value for fusing (tp=10ms) | I2t | 2 | A2s | |||
| Critical rate of rise of on-state current (IG =2IGT) | dIT/dt | 50 | A/s | |||
| Peak gate current | IGM | 0.2 | A | |||
| Average gate power dissipation | PG(AV) | 0.1 | W | |||
| Junction Temperature | TJ | -40 ~ +110 | ||||
| Storage Temperature | TSTG | -40 ~ +150 | ||||
| Gate trigger current | IGT | VD =12V, IT=10mA, Tj =25 | A | 10 | 200 | |
| Gate trigger voltage | VGT | V | 0.8 | |||
| Gate non-trigger voltage | VGD | VD =1/2VDRM, Tj =110 | V | 0.2 | ||
| Latching current | IL | VD =12V, IG=0.5mA, RGK=1k, Tj =25 | mA | 3 | ||
| Holding current | IH | mA | 4 | |||
| Critical-rate of rise of commutation voltage | dVD/dt | VD=2/3VDRM, Gate Open, Tj =110 | V/s | 10 | ||
| Forward "on" voltage | VTM | ITM =4A, tp=380s | V | 1.55 | ||
| Repetitive Peak Off-State Current | IDRM | VD =VDRM, Tj=25 | A | 5 | ||
| Repetitive Peak Reverse Current | IRRM | VR =VRRM, Tj=110 | mA | 0.1 | ||
| Junction to case thermal resistance | Rth(j-c) | TYP. | 60 | /W | ||
| Junction to ambient thermal resistance | Rth(j-a) | TYP. | 150 | /W |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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