| Holding Current (Ih) | - |
| Current - Gate Trigger(Igt) | - |
| Voltage - On State(Vtm) | - |
| Current - On State(It(RMS)) | 60A |
| Peak off - state voltage(Vdrm) | 1.2kV |
| Current - Surge(Itsm@f) | 600A |
| SCR Type | 1 SCR |
| Gate Trigger Voltage (Vgt) | - |
| Operating Temperature | - |
| Description | 1.2kV 1 SCR SCRs RoHS |
| Mfr. Part # | STTN6050H-12M1Y |
| Model Number | STTN6050H-12M1Y |
View Detail Information
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Product Specification
| Holding Current (Ih) | - | Current - Gate Trigger(Igt) | - |
| Voltage - On State(Vtm) | - | Current - On State(It(RMS)) | 60A |
| Peak off - state voltage(Vdrm) | 1.2kV | Current - Surge(Itsm@f) | 600A |
| SCR Type | 1 SCR | Gate Trigger Voltage (Vgt) | - |
| Operating Temperature | - | Description | 1.2kV 1 SCR SCRs RoHS |
| Mfr. Part # | STTN6050H-12M1Y | Model Number | STTN6050H-12M1Y |
The STTN6050H-12M1Y is a 1200 V, 60 A full controlled SCR bridge leg integrated into an ACEPACK SMIT module. It is capable of controlling AC current up to 85 ARMS when connected to an AC line network. This device enables the design of single or three-phase AC DC rectifier bridges, phase recombination branches for totem pole PFCs up to 75 A(AVE) output current, AC phasing arms of line inverters, and back-to-back SCR based AC switches for heating controllers or UPS bypass relays. Its top cooling pad, positioned opposite the printed circuit board, facilitates automatic assembly of the PCB-module-heat sink stack, resulting in a low-profile and compact converter for on-board chargers, charging stations, motor drives, UPS, and AC-DC power supplies. Leveraging ST's high-temperature automotive ASD technology, it offers enhanced noise immunity of 1000 V/s at a 150 C junction temperature (Tj) and over-voltage robustness up to 1400 V (VDSM).
| Symbol | Parameter | Value | Unit |
| IT(RMS) | RMS on-state current (sine half wave) @ TC = 106 C | 60 | A |
| IT(AV) | Average on-state current (sine half wave) | 38 | A |
| ITSM | Non repetitive surge peak on-state current (VR = 0 V, IG = 100 mA, tp = 8.3 ms, Tj initial = 25 C) | 660 | A |
| ITSM | Non repetitive surge peak on-state current (VR = 0 V, IG = 100 mA, tp = 10 ms, Tj initial = 25 C) | 600 | A |
| I2t | I2t value for fusing (tp = 10 ms, Tj = 25 C) | 1800 | As |
| dl/dt | Critical rate of rise of on-state SCR current (IG = 2 x IGT, tr 100 ns, f = 50 and 60 Hz, Tj = 150 C) | 200 | A/s |
| VDRM / VRRM | Repetitive off-state voltage (Tj = -40 C to 150 C) | 1200 | V |
| VDSM / VRSM | Non repetitive surge peak off-state voltage (tp = 10 ms, Tj = 25 C) | 1400 | V |
| VGM | Peak forward SCR gate voltage (tp = 20 s, Tj = 150 C) | 10 | V |
| IGM | Peak forward SCR gate current (tp = 20 s, Tj = 150 C) | 8 | A |
| IGCM | Peak cathode drive current (C1 and C2 pins, tp = 20 s, Tj = 150 C) | 8 | A |
| VRGM | Peak SCR gate voltage (Tj = 25 C) | 5 | V |
| PG(AV) | Average SCR gate power dissipation (Tj = 150 C) | 1 | W |
| Tstg | Storage junction temperature range | -40 to +150 | C |
| Tj | Operating junction temperature range | -40 to +150 | C |
| VINS | RMS tab-to-pin lead insulation voltage (1 minute) | 4 | kV |
| IGT | SCR triggering current (VD = 12 V, RL = 33 , Tj = 25 C) | Min. 10 / Max. 50 | mA |
| VGT | SCR triggering voltage (VD = 12 V, RL = 33 , Tj = 25 C) | Max. 1.3 | V |
| VGD | SCR non-triggering voltage (VD = 2/3 VDRM, RL = 3.3 k, Tj = 150 C) | Min. 0.2 | V |
| IH | SCR holding current (IT = 500 mA, gate open, Tj = 25 C) | Max. 100 | mA |
| IL | SCR latching current (IG = 1.2 x IGT, Tj = 25 C) | Max. 125 | mA |
| tGT | SCR turn-on time (IT = 60 A, VD = 800 V, IG = 100 mA, dIG/dt = 0.2 A/s, Tj = 25 C) | Typ. 1 | s |
| tQ | SCR turn-off time (IT = 38 A, VD = 800 V, dIT/dt = 10 A/s, VR = 75 V, dVD/dt = 20 V/s, tp = 100 s, Tj = 150 C) | Typ. 150 | s |
| dV/dt | Static dV/dt immunity (VD = 800 V, gate open, Tj = 150 C) | Min. 1000 | V/s |
| VTM | On-state voltage drop (ITM = 60 A, tP = 380 s, Tj = 25 C) | Max. 1.3 | V |
| VTM | On-state voltage drop (ITM = 60 A, tP = 380 s, Tj = 150 C) | Max. 1.3 | V |
| VTOT | SCR on-state threshold voltage (Tj = 150 C) | Max. 0.8 | V |
| RDT | SCR on-state dynamic resistance (Tj = 150 C) | Max. 7.35 | m |
| IDRMT/IRRMT | Repetitive leakage current (VD = VDRM, VR = VRRM, Tj = 25 C) | Max. 5 | A |
| IDRMT/IRRMT | Repetitive leakage current (VD = VDRM, VR = VRRM, Tj = 150 C) | Max. 7.5 | mA |
| IDSMT/IRSMT | Non repetitive leakage current (VD = VDSM, VR = VRSM, Tj = 25 C) | Max. 10 | A |
| Rth(j-c) | Junction to case thermal resistance (DC, per SCR) | Max. 0.75 | C/W |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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