| Non-Repetitive Peak Forward Surge Current | 40A |
| Operating Junction Temperature Range | -55℃~+150℃ |
| Voltage - Forward(Vf@If) | 850mV@0.5A |
| Current - Rectified | 1A |
| Voltage - DC Reverse(Vr) | 100V |
| Description | Bridge Rectifier 100V 1A Surface Mount MBS |
| Mfr. Part # | MB110S |
| Package | MBS |
| Model Number | MB110S |
View Detail Information
Explore similar products
Durable DIODES GBU1006 Glass Passivated Bridge Rectifier Suitable for PCB
Glass Passivated Bridge Rectifier With 1.2A Forward Current Jingdao Microelectro
High Surge Capability Rectifier Bridge LangJie DB207S Suitable for Various
three phase bridge rectifier MICROCHIP 696-5 with aluminum case and tin lead or
Product Specification
| Non-Repetitive Peak Forward Surge Current | 40A | Operating Junction Temperature Range | -55℃~+150℃ |
| Voltage - Forward(Vf@If) | 850mV@0.5A | Current - Rectified | 1A |
| Voltage - DC Reverse(Vr) | 100V | Description | Bridge Rectifier 100V 1A Surface Mount MBS |
| Mfr. Part # | MB110S | Package | MBS |
| Model Number | MB110S |
The MB12S thru MB110S series are Schottky bridge rectifiers designed for general-purpose single-phase bridge rectifier applications. They feature Schottky chips for high surge forward current capability and low forward voltage (VF). These rectifiers are suitable for use on alumina or glass-epoxy substrates.
| Item | Symbol | Unit | MB12S | MB14S | MB16S | MB18S | MB110S | Conditions | |
| Repetitive Peak Reverse Voltage | VRRM | V | 20 | 40 | 60 | 80 | 100 | ||
| Average Rectified Output Current | IO | A | 1.0 | 60Hz sine wave, R-load, Ta=25 (On glass-epoxi substrate: 0.8) | |||||
| Surge(Non-repetitive)Forward Current | IFSM | A | 40 | 60HZ sine wave, 1 cycle, Tj=25 | |||||
| Current Squared Time | I2t | AS | 6.6 | 1mst<8.3ms Tj=25, Rating of per diode | |||||
| Storage Temperature | Tstg | -55 ~+150 | |||||||
| Junction Temperature | Tj | -55 ~+150 | |||||||
| Peak Forward Voltage | VFM | V | 0.55 | 0.65 | 0.85 | IFM=0.5A, Pulse measurement, Rating of per diode | |||
| Peak Reverse Current | IRRM | mA | 0.5 | VRM=VRRM , Pulse measurement, Rating of per diode | |||||
| Thermal Resistance (Junction to Ambient) | RJ-A | /W | 76 | Between junction and ambient, On alumina substrate | |||||
| Thermal Resistance (Junction to Ambient) | RJ-A | /W | 134 | Between junction and ambient, On glass-epoxi substrate | |||||
| Thermal Resistance (Junction to Lead) | RJ-L | /W | 20 | Between junction and lead | |||||
Contact: http://www.luguang.cn, mail:lge@luguang.cn
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
.gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c... .gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c...
Get in touch with us
Leave a Message, we will call you back quickly!