| Current - Collector(Ic) | 500mA |
| Collector - Emitter Voltage VCEO | - |
| Description | 500mA SOIC-18-300mil Bipolar Transistor Arrays RoHS |
| Mfr. Part # | BULN2803LVS |
| Package | SOIC-18-300mil |
| Model Number | BULN2803LVS |
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Product Specification
| Current - Collector(Ic) | 500mA | Collector - Emitter Voltage VCEO | - |
| Description | 500mA SOIC-18-300mil Bipolar Transistor Arrays RoHS | Mfr. Part # | BULN2803LVS |
| Package | SOIC-18-300mil | Model Number | BULN2803LVS |
The BULN2803LVS is a 20 V, 500 mA Darlington transistor array from BORN SEMICONDUCTOR, INC. It features eight NPN Darlington pairs with common-cathode clamp diodes for switching inductive loads, supporting 1.8V low voltage input and single 500 mA output current. Designed for direct operation with TTL or 5-V CMOS devices, it includes a 2.7-k series base resistor for each Darlington pair. Applications include stepper motor drive, relay drive, display driver, and indicator drive.
| Parameter | Value | Unit |
|---|---|---|
| General Features | ||
| Output Current (per channel) | 500 | mA |
| Collector-Emitter Voltage | 20 | V |
| Input Voltage Compatibility | 1.8V low voltage input, TTL/CMOS logic signal | |
| Series Base Resistor | 2.7-k | |
| Absolute Maximum Ratings (At 25C free-air temperature unless otherwise noted) | ||
| Collector to emitter voltage (VCE) | 20 | V |
| Input voltage (VI) | 20 | V |
| Peak collector current (ICP) | 500 | mA |
| Output clamp current (IOK) | 500 | mA |
| Total substrate-terminal current (ITE) | -2.0 | A |
| Operating virtual junction temperature (TJ) | -65 to 150 | C |
| Storage temperature range (TSTG) | -65 to 150 | C |
| ESD Ratings | ||
| Human body model (HBM) | 2000 | V |
| Charged device model (CDM) | 500 | V |
| Recommended Operating Conditions | ||
| Collector-emitter voltage (V(CE)) | 0 to 18 | V |
| Ambient temperature (T(A)) | -40 to 85 | C |
| Thermal Information (SOIC Package) | ||
| Junction-to-ambient thermal resistance (RJA) | 66.4 | C/W |
| Junction-to-case (top) thermal resistance (RJC(top)) | 29.5 | C/W |
| Junction-to-board thermal resistance (RJB) | 33.0 | C/W |
| Junction-to-top characterization parameter (JT) | 6.0 | C/W |
| Junction-to-board characterization parameter (JB) | 32.5 | C/W |
| Electrical Characteristics (TA=+25C, unless otherwise specified) | ||
| Input current-on condition (VI(on)) (IC = 100 mA) | 2.0 to 2.1 | V |
| Input current-on condition (VI(on)) (IC = 200 mA) | 2.2 to 2.3 | V |
| Collector-emitter saturation voltage (VCE(sat)) (VI = 1.8V, IC = 100 mA) | 2.0 to 2.1 | V |
| Collector-emitter saturation voltage (VCE(sat)) (VI = 1.8V, IC = 200 mA) | 3.2 to 3.3 | V |
| Collector-emitter saturation voltage (VCE(sat)) (VI =3.3V, IC = 300 mA) | 1.5 to 1.6 | V |
| Collector-emitter saturation voltage (VCE(sat)) (VI =3.3V, IC = 500 mA) | 1.8 to 1.9 | V |
| Clamp diode forward Voltage (VF) (IF = 350 mA) | 1.4 to 1.6 | V |
| Output leakage current (ICEX) (VCE = 18V, IIN = 0V) | to 50 | A |
| Output leakage current (VCE = 18V, VIN = 0V) | to 100 | A |
| Input current (IIN) (VIN = 1.8V, IC = 250mA) | 0.6 to 1.2 | mA |
| Input current (IIN) (VIN = 2.4V, IC = 250mA) | 1.6 to 3.0 | mA |
| Input current (IIN) (VIN = 3.3V, IC = 250mA) | 3.2 to 4.5 | mA |
| Clamp reverse current (IR) (VR = 18 V) | to 100 | A |
| Input capacitance (Ci) (VI = 0, f = 1 MHz) | 15 | pF |
| Propagation delay time, low-to-high-level output (tPLH) (VL = 5 V, RL = 45) | 0.12 | s |
| Propagation delay time, high-to-low-level output (tPHL) (VL = 5 V, RL = 45) | 0.12 | s |
| SOP18 Package Dimensions (mm) | ||
| A | to 2.65 | |
| A1 | 0.10 to 0.3 | |
| b | 0.31 to 0.51 | |
| c | 0.15 to 0.25 | |
| D | 11.35 to 11.75 | |
| E | 9.97 to 10.63 | |
| E1 | 7.40 to 7.60 | |
| e | 1.27BSC | |
| L | 0.40 to 1.27 | |
| L1 | 0.20 to 0.33 | |
| 0 to 8 | ||
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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