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China High Voltage Seven Channel Darlington Transistor Array BORN BULN2003A with
China High Voltage Seven Channel Darlington Transistor Array BORN BULN2003A with

  1. China High Voltage Seven Channel Darlington Transistor Array BORN BULN2003A with
  2. China High Voltage Seven Channel Darlington Transistor Array BORN BULN2003A with
  3. China High Voltage Seven Channel Darlington Transistor Array BORN BULN2003A with

High Voltage Seven Channel Darlington Transistor Array BORN BULN2003A with

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Current - Collector(Ic) 500mA
Description 500mA SOP-16 Bipolar Transistor Arrays RoHS
Mfr. Part # BULN2003A
Package SOP-16
Model Number BULN2003A

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Product Specification

Current - Collector(Ic) 500mA Description 500mA SOP-16 Bipolar Transistor Arrays RoHS
Mfr. Part # BULN2003A Package SOP-16
Model Number BULN2003A

BORN SEMICONDUCTOR BULN2003A Darlington Transistor Arrays

Product Overview

The BORN SEMICONDUCTOR BULN2003A is a versatile 50V, 500mA Darlington transistor array designed for driving higher current loads from low-voltage logic. It features seven NPN Darlington pairs with high-voltage outputs and integrated common-cathode clamp diodes for switching inductive loads. Each Darlington pair includes a 2.7k series base resistor, enabling direct operation with TTL or 5V CMOS devices. Applications include relay drivers, hammer drivers, lamp drivers, display drivers, line drivers, logic buffers, stepper motors, IP cameras, and HVAC valves.

Product Attributes

  • Brand: BORN SEMICONDUCTOR
  • Product Name: BULN2003A
  • Package Type: SOP-16

Technical Specifications

Parameter Value Unit
Collector Current (Single Output) 500 mA
High-Voltage Outputs 50 V
Output Clamp Diodes Integrated -
Inputs Compatibility Various Types of Logic -
Collector-emitter voltage (VCE) 0 to 50 V
Ambient temperature (TA) -40 to 85 C
Junction-to-ambient thermal resistance (RJA) 66.4 C/W
Junction-to-case (top) thermal resistance (RJC(top)) 29.5 C/W
Junction-to-board thermal resistance (RJB) 33.0 C/W
Input voltage (VIN) -0.3 to 30 V
Peak collector current (IC) 500 mA
Output clamp current (ICP) 500 mA
Operating virtual junction temperature (TJ) -55 to 150 C
Storage temperature range (TSTG) -55 to 150 C
Human body model (HBM) ESD Rating (V(ESD)) 2000 V
Charged device model (CDM) ESD Rating 500 V
Collector-emitter saturation voltage (VCE(sat)) (Typical IC=100 mA, II=250A) 0.9 V
Collector cutoff current (ICEX) (VCE=50V, II=0) 50 A
Input capacitance (Ci) (VI=0, f=1 MHz) 15 to 25 pF
Propagation delay time, low-to-high-level output (tPLH) 130 ns
Propagation delay time, high-to-low-level output (tPHL) 20 ns

Detailed Description

The BULN2003A integrates seven high-voltage, high-current NPN Darlington transistor pairs, each capable of sinking up to 500 mA. These pairs feature common emitters and open collector outputs, along with integrated suppression diodes to protect against inductive load kick-back. A 2.7k series base resistor on each input allows for direct interfacing with TTL or 5V/3.3V CMOS logic. The device is suitable for applications requiring significant current sourcing or sinking capabilities, such as driving relays, solenoids, lamps, and small motors. Outputs can be paralleled for increased current handling.

Device Functional Modes

  • Inductive Load Drive: When the COM pin is connected to the coil supply voltage, the internal free-wheeling diodes suppress kick-back voltage from inductive loads.
  • Resistive Load Drive: The COM pin can be left unconnected or connected to the load voltage supply. If multiple supplies are used, connect to the highest voltage supply.

Application Information

The BULN2003A is ideal for interfacing low-voltage microcontrollers or logic devices with higher voltage and current peripherals. A common application involves driving inductive loads like motors, solenoids, and relays. Key design considerations include input voltage range, temperature range, output drive current, and power dissipation. The coil current is determined by the coil voltage, coil resistance, and the output low voltage (VCE(SAT)). On-chip power dissipation must be managed to stay within the device's thermal limits, with a recommended junction temperature limit below 125C.

Power Supply Recommendations

While the part itself does not require a separate power supply, the COM pin is typically tied to the system power supply. Care must be taken to ensure the output voltage does not significantly exceed the COM pin voltage to prevent excessive forward biasing of the flyback diodes, which could lead to overheating or damage.

Layout Guidelines

Use thin traces for inputs due to low current logic signals. Separate input channels to minimize crosstalk. Employ thick traces for outputs to accommodate high currents. The common emitter return trace should be sized to be very wide, capable of handling up to 2.5 A in some applications.

Package Information

SYMBOL MIN. TYP. MAX. UNIT
A 1.45 1.60 1.75 mm
A1 0.10 0.15 0.25 mm
A2 1.40 1.45 1.50 mm
A3 0.60 0.65 0.70 mm
b 0.30 0.40 0.50 mm
c 0.15 0.20 0.25 mm
D 9.80 9.90 10.00 mm
E 5.80 6.00 6.20 mm
E1 3.80 3.90 4.00 mm
e 1.27BSC -
L 0.50 0.60 0.70 mm
L1 1.05BSC -
0 - 8 -

Specifications are subject to change without notice. Please refer to http://www.born-tw.com for current information.


2508151650_BORN-BULN2003A_C50338755.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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