Seven channel Darlington array HGSEMI ULN2003N compatible with 5V TTL CMOS logic

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Current - Collector(Ic)	500mA
Collector - Emitter Voltage VCEO	50V
Description	500mA 50V DIP-16 Bipolar Transistor Arrays RoHS
Mfr. Part #	ULN2003N
Package	DIP-16
Model Number	ULN2003N

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Product Specification


Current - Collector(Ic)	500mA	Collector - Emitter Voltage VCEO	50V
Description	500mA 50V DIP-16 Bipolar Transistor Arrays RoHS	Mfr. Part #	ULN2003N
Package	DIP-16	Model Number	ULN2003N

Product Overview

The ULN2003 and ULN2004 are high voltage, high current Darlington arrays, each containing seven open collector Darlington pairs with common emitters. These versatile devices are designed to interface with common logic families, including 5V TTL and CMOS for the ULN2003, and 6-15V CMOS and PMOS for the ULN2004. They are capable of driving a wide range of loads such as solenoids, relays, DC motors, LED displays, filament lamps, thermal printheads, and high power buffers. Each channel is rated at 500 mA with a peak current capability of 600 mA, and includes integrated suppression diodes for inductive load driving. The input and output pins are arranged opposite each other to simplify board layout.

Product Attributes

Brand: HG Semi
Product Series: ULN2003/ULN2004

Technical Specifications

Model	Package Type	Marking	Packing	Packing Qty
ULN2003N	DIP-16	ULN2003	TUBE	1000pcs/Box
ULN2004N	DIP-16	ULN2004	TUBE	1000pcs/Box
ULN2003M/TR	SOP-16	ULN2003	REEL	2500pcs/Reel
ULN2004M/TR	SOP-16	ULN2004	REEL	2500pcs/Reel
ULN2003MT/TR	TSSOP-16	ULN2003	REEL	2500pcs/Reel
ULN2004MT/TR	TSSOP-16	ULN2004	REEL	2500pcs/Reel

Technical Specifications

Parameter	Symbol	Value	Unit	Notes
Output voltage	V_O	50	V
Input voltage	V_I	30	V	for ULN2003 - 2004
Continuous collector current	I_C	500	mA
Continuous base current	I_B	25	mA
Operating ambient temperature range	T_A	-40 to 85	C
Storage temperature range	T_STG	-55 to 150	C
Junction temperature	T_J	150	C
Lead Temperature (Soldering, 10 seconds)	T_L	260	C
Thermal resistance junction-ambient (Max.) DIP-16	R_thJA	70	/W
Thermal resistance junction-ambient (Max.) SOP-16	R_thJA	120	/W
Output leakage current	I_CEX	50	A	V_CE = 50 V, (Figure 1.)
Output leakage current	I_CEX	100	A	T_A = 85C, V_CE = 50 V (Figure 1.)
Output leakage current	I_CEX	500	A	T_A = 85C for ULN2002, V_CE = 50 V, V_I = 6 V (Figure 2.)
Output leakage current	I_CEX	500	A	T_A = 85C for ULN2002, V_CE = 50 V, V_I = 1V (Figure 2.)
Collector-emitter saturation voltage	V_CE(SAT)	0.9 - 1.1	V	I_C = 100 mA, I_B = 250 A (Figure 3.)
Collector-emitter saturation voltage	V_CE(SAT)	1.1 - 1.3	V	I_C = 200 mA, I_B= 350 A
Collector-emitter saturation voltage	V_CE(SAT)	1.3 - 1.6	V	I_C = 350 mA, I_B= 500 A
Input current (ON)	I_I(ON)	0.82 - 1.25	mA	for ULN2002, V_I = 17 V (Figure 4.)
Input current (ON)	I_I(ON)	0.93 - 1.35	mA	for ULN2003, V_I = 3.85 V
Input current (ON)	I_I(ON)	0.35 - 0.5	mA	for ULN2004, V_I = 5 V
Input current (ON)	I_I(ON)	1 - 1.45	mA	V_I = 12 V
Input current (OFF)	I_I(OFF)	50 - 65	A	T_A = 85C, I_C = 500 A (Figure 5.)
Input voltage (ON)	V_I(ON)	13	V	V_CE= 2 V, for ULN2002 I_C = 300 mA (Figure 6.)
Input voltage (ON)	V_I(ON)	2.4	V	V_CE= 2 V, for ULN2003 I_C = 200 mA
Input voltage (ON)	V_I(ON)	2.7	V	V_CE= 2 V, for ULN2003 I_C = 250 mA
Input voltage (ON)	V_I(ON)	3	V	V_CE= 2 V, for ULN2003 I_C = 300 mA
Input voltage (ON)	V_I(ON)	5	V	V_CE= 2 V, for ULN2004 I_C = 125 mA
Input voltage (ON)	V_I(ON)	6	V	V_CE= 2 V, for ULN2004 I_C = 200 mA
Input voltage (ON)	V_I(ON)	7	V	V_CE= 2 V, for ULN2004 I_C = 275 mA
Input voltage (ON)	V_I(ON)	8	V	V_CE= 2 V, for ULN2004 I_C = 350 mA
DC Forward current gain	h_FE	1000		for ULN2001, V_CE = 2 V, I_C = 350mA (Figure 3.)
Input capacitance	C_I	15 - 25	pF
Turn-on delay time	t_PLH	0.25 - 1	s	0.5 V_I to 0.5 V_O
Turn-off delay time	t_PHL	0.25 - 1	s	0.5 V_I to 0.5 V_O
Clamp diode leakage current	I_R	50	A	VR = 50 V (Figure 7.)
Clamp diode leakage current	I_R	100	A	T_A = 85C, VR = 50 V
Clamp diode forward voltage	V_F	1.7 - 2	V	IF = 350 mA (Figure 8.)

2507091655_HGSEMI-ULN2003N_C383065.pdf

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