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Hefei Purple Horn E-Commerce Co., Ltd.

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China TOSHIBA TBD62083AFG ZEL Silicon Based 8 Channel Sink Type DMOS Transistor Array
China TOSHIBA TBD62083AFG ZEL Silicon Based 8 Channel Sink Type DMOS Transistor Array

  1. China TOSHIBA TBD62083AFG ZEL Silicon Based 8 Channel Sink Type DMOS Transistor Array

TOSHIBA TBD62083AFG ZEL Silicon Based 8 Channel Sink Type DMOS Transistor Array

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Current - Collector(Ic) 500mA
Collector - Emitter Voltage VCEO 50V
Operating Temperature -40℃~+85℃
Description 500mA 50V SOP-18-300mil Bipolar Transistor Arrays RoHS
Mfr. Part # TBD62083AFG(Z,EL)
Package SOP-18-300mil
Model Number TBD62083AFG(Z,EL)

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Product Specification

Current - Collector(Ic) 500mA Collector - Emitter Voltage VCEO 50V
Operating Temperature -40℃~+85℃ Description 500mA 50V SOP-18-300mil Bipolar Transistor Arrays RoHS
Mfr. Part # TBD62083AFG(Z,EL) Package SOP-18-300mil
Model Number TBD62083AFG(Z,EL)

Product Overview

The TBD62083A and TBD62084A series are 8-channel sink-type DMOS transistor arrays designed for switching inductive loads. Each output includes a built-in clamp diode for protection. These integrated circuits are suitable for applications requiring high voltage and high current drive capabilities.

Product Attributes

  • Brand: TOSHIBA
  • Type: BiCD Integrated Circuit Silicon Monolithic
  • Material: Silicon

Technical Specifications

SeriesModelPackage TypePackage DetailsWeight (Typ.)Max Output Voltage (VOUT)Max Output Current (IOUT)Input Voltage (Output ON) TBD62083AInput Voltage (Output ON) TBD62084AInput Voltage (Output OFF) TBD62083AInput Voltage (Output OFF) TBD62084A
TBD62083A/TBD62084ATBD62083APG / TBD62084APGPGP-DIP18-300-2.54-0011.3 g50 V500 mA/ch2.5 V (MIN)7.0 V (MIN)0.6 V (MAX)1.0 V (MAX)
TBD62083A/TBD62084ATBD62083AFG / TBD62084AFGFGSOP18-P-375-1.270.41 g50 V500 mA/ch2.5 V (MIN)7.0 V (MIN)0.6 V (MAX)1.0 V (MAX)
TBD62083A/TBD62084ATBD62083AFNG / TBD62084AFNGFNGSSOP18-P-225-0.650.09 g50 V500 mA/ch2.5 V (MIN)7.0 V (MIN)0.6 V (MAX)1.0 V (MAX)
TBD62083A/TBD62084ATBD62083AFWG / TBD62084AFWGFWGP-SOP18-0812-1.27-0010.48 g50 V500 mA/ch2.5 V (MIN)7.0 V (MIN)0.6 V (MAX)1.0 V (MAX)
CharacteristicSymbolConditionMinTyp.MaxUnit
Output Leakage CurrentIleakVOUT = 50V, Ta = 85C, VIN = 0 V1.0A
Output Voltage (ON-resistance) TBD62083AVDS (RON)IOUT = 350 mA, VIN =5.0V0.71.14V ()
Output Voltage (ON-resistance) TBD62083AVDS (RON)IOUT = 200 mA, VIN =5.0V0.40.65V ()
Output Voltage (ON-resistance) TBD62083AVDS (RON)IOUT = 100 mA, VIN =5.0V0.20.325V ()
Output Voltage (ON-resistance) TBD62084AVDS (RON)IOUT = 350 mA, VIN =7.0V0.71.14V ()
Output Voltage (ON-resistance) TBD62084AVDS (RON)IOUT = 200 mA, VIN =7.0V0.40.65V ()
Output Voltage (ON-resistance) TBD62084AVDS (RON)IOUT = 100 mA, VIN =7.0V0.20.325V ()
Input Current (Output ON) TBD62083AIIN (ON)VIN = 2.5 V0.1mA
Input Current (Output ON) TBD62084AIIN (ON)VIN = 7.0 V0.5mA
Input Current (Output OFF)IIN (OFF)VIN = 0 V, Ta = 85C1.0A
Clamp Diode Reverse CurrentIRVR = 50 V, Ta = 85C1.0A
Clamp Diode Forward VoltageVFIF = 350 mA2.0V
Turn-on DelaytONVOUT = 50 V, RL = 125 , CL = 15 pF0.4s
Turn-off DelaytOFFVOUT = 50 V, RL = 125 , CL = 15 pF0.8s
CharacteristicSymbolRatingUnit
Output VoltageVOUT50V
COMMON Pin VoltageVCOM-0.5 to 50V
Output CurrentIOUT500mA/ch
Input VoltageVIN-0.5 to 30V
Clamp Diode Reverse VoltageVR50V
Clamp Diode Forward CurrentIF500mA
Power Dissipation (PG)PD1.47W
Power Dissipation (FG)PD0.96W
Power Dissipation (FNG)PD0.96W
Power Dissipation (FWG)PD1.31W
Operating TemperatureTopr-40 to 85C
Storage TemperatureTstg-55 to 150C

2411220247_TOSHIBA-TBD62083AFG-Z-EL_C4153828.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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