Hefei Purple Horn E-Commerce Co., Ltd.
| DC Current Gain | 35@5mA,10V |
| Current - Collector(Ic) | 100mA |
| Resistor Ratio | 1.2 |
| Number | 2 NPN (Pre-Biased) |
| Pd - Power Dissipation | 385mW |
| Collector - Emitter Voltage VCEO | 50V |
| Description | Pre-Biased Bipolar Transistor (BJT) 2 NPN Pre-Biased Transistor 50V 100mA 385mW Surface Mount SOT-363 |
| Mfr. Part # | SMUN5211DW |
| Package | SOT-363 |
| Model Number | SMUN5211DW |
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Product Specification
| DC Current Gain | 35@5mA,10V | Current - Collector(Ic) | 100mA |
| Resistor Ratio | 1.2 | Number | 2 NPN (Pre-Biased) |
| Pd - Power Dissipation | 385mW | Collector - Emitter Voltage VCEO | 50V |
| Description | Pre-Biased Bipolar Transistor (BJT) 2 NPN Pre-Biased Transistor 50V 100mA 385mW Surface Mount SOT-363 | Mfr. Part # | SMUN5211DW |
| Package | SOT-363 | Model Number | SMUN5211DW |
The BRT (Bias Resistor Transistor) integrates a single transistor with a monolithic bias network, consisting of a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network, simplifying circuit design, reducing board space, and decreasing component count. The SMUN5211DW model houses two BRT devices in a SOT-363 package, ideal for low-power surface mount applications where board space is limited.
Certifications: Material complies with RoHS requirements.
Dual NPN Bias Resistor Transistors
SMUN5211DW
SOT-363
7A
R1: 10 K, R2: 10 K
0.8 - 1.2
3000/Tape&Reel
| Parameter | Symbol | Min. | Max. | Unit | Notes |
| Collector-Base Voltage | VCBO | - | 50 | Vdc | Common for Q1 and Q2 |
| Collector-Emitter Voltage | VCEO | - | 50 | Vdc | Common for Q1 and Q2 |
| Collector Current | IC | - | 100 | mAdc | Common for Q1 and Q2 |
| Total Device Dissipation (One Junction Heated) | PD | - | 187 | mW | TA= 25C, FR-4 @ Minimum Pad |
| Total Device Dissipation (One Junction Heated) | PD | - | 256 | mW | TA= 25C, FR-4 @ 1.0 x 1.0 inch Pad |
| Thermal Resistance Junction-to-Ambient (One Junction Heated) | JA | - | 670 | C/W | FR-4 @ Minimum Pad |
| Thermal Resistance Junction-to-Ambient (One Junction Heated) | JA | - | 490 | C/W | FR-4 @ 1.0 x 1.0 inch Pad |
| Thermal Resistance Junction-to-Lead (One Junction Heated) | JL | - | 250 | C/W | FR-4 @ Minimum Pad |
| Thermal Resistance Junction-to-Lead (One Junction Heated) | JL | - | 385 | C/W | FR-4 @ 1.0 x 1.0 inch Pad |
| Total Device Dissipation (Both Junctions Heated) | PD | - | 2.0 | mW/C | Derate above 25C, FR-4 @ Minimum Pad |
| Total Device Dissipation (Both Junctions Heated) | PD | - | 3.0 | mW/C | Derate above 25C, FR-4 @ 1.0 x 1.0 inch Pad |
| Thermal Resistance Junction-to-Ambient (Both Junctions Heated) | JA | - | 493 | C/W | FR-4 @ Minimum Pad |
| Thermal Resistance Junction-to-Ambient (Both Junctions Heated) | JA | - | 325 | C/W | FR-4 @ 1.0 x 1.0 inch Pad |
| Thermal Resistance Junction-to-Lead (Both Junctions Heated) | JL | - | 188 | C/W | FR-4 @ Minimum Pad |
| Thermal Resistance Junction-to-Lead (Both Junctions Heated) | JL | - | 208 | C/W | FR-4 @ 1.0 x 1.0 inch Pad |
| Junction and Storage Temperature | TJ, Tstg | -55 | +150 | C | - |
| DC Current Gain | hFE | 35 | - | - | VCE = 10 V, IC = 5 mA |
| Collector Base Cutoff Current | ICBO | - | 100 | nA | VCB = 50 V |
| Collector Emitter Cutoff Current | ICEO | - | 500 | nA | VCE = 50 V |
| Emitter Base Cutoff Current | IEBO | - | 0.5 | mA | VEB = 6 V |
| Collector Base Breakdown Voltage | V(BR)CBO | 50 | - | V | IC = 10 A |
| Collector Emitter Breakdown Voltage | V(BR)CEO | 50 | - | V | IC = 2 mA |
| Collector Emitter Saturation Voltage | VCEsat | - | 0.25 | V | IC = 10 mA, IB = 0.3 mA |
| Output Voltage (on) | VOL | - | 0.2 | V | VCC = 5 V, VB = 2.5 V, RL = 1 K |
| Output Voltage (off) | VOH | 4.9 | - | V | VCC = 5 V, VB = 0.5 V, RL = 1 K |
| Input Resistor | R1 | 7 | 13 | K | - |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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