| Operating Temperature | -40℃~+125℃ |
| Holding Current (Ih) | 20mA |
| Current - Gate Trigger(Igt) | 30mA |
| Voltage - On State(Vtm) | 1.4V |
| Average Gate Power Dissipation (PG(AV)) | 500mW |
| Current - On State(It(RMS)) | 12A |
| Peak off - state voltage(Vdrm) | 600V |
| SCR Type | - |
| Gate Trigger Voltage (Vgt) | 1.5V |
| Description | 600V 12A Through Hole TO-220 |
| Mfr. Part # | BTA12-600B |
| Package | TO-220 |
| Model Number | BTA12-600B |
View Detail Information
Explore similar products
Glass Passivated Triac JSCJ BT136 in Plastic Envelope for Static Switching and
Slkor BT134W
Plastic Encapsulate TRIAC JSCJ BTA41 800BW with NPNPN 5 layer Structure and High
Slkor MCR100-8
Product Specification
| Operating Temperature | -40℃~+125℃ | Holding Current (Ih) | 20mA |
| Current - Gate Trigger(Igt) | 30mA | Voltage - On State(Vtm) | 1.4V |
| Average Gate Power Dissipation (PG(AV)) | 500mW | Current - On State(It(RMS)) | 12A |
| Peak off - state voltage(Vdrm) | 600V | SCR Type | - |
| Gate Trigger Voltage (Vgt) | 1.5V | Description | 600V 12A Through Hole TO-220 |
| Mfr. Part # | BTA12-600B | Package | TO-220 |
| Model Number | BTA12-600B |
This product is a Bi-Directional Triode Thyristor (TRIAC) designed for power control applications. It offers high performance with a repetitive peak off-state voltage of 600V and an RMS on-state current of 12A. Key features include high commutation dv/dt and an isolation voltage of 1500V AC, making it suitable for various industrial and consumer electronics where reliable switching and isolation are required.
| Symbol | Parameter | Condition | Ratings | Units |
|---|---|---|---|---|
| VDRM | Repetitive Peak Off-State Voltage | TJ = 25C unless otherwise specified | 600 | V |
| IT(RMS) | R.M.S On-State Current | TC = 79 C | 12 | A |
| ITSM | Surge On-State Current | One Cycle, 50Hz/60Hz, Peak, Non-Repetitive | 119/130 | A |
| I2t | I2t | 71 | A2s | |
| PGM | Peak Gate Power Dissipation | 5.0 | W | |
| PG(AV) | Average Gate Power Dissipation | 0.5 | W | |
| IGM | Peak Gate Current | 2.0 | A | |
| VGM | Peak Gate Voltage | 10 | V | |
| VISO | Isolation Breakdown Voltage(R.M.S.) | A.C. 1 minute | 1500 | V |
| TJ | Operating Junction Temperature | -40 ~ 125 | C | |
| TSTG | Storage Temperature | -40 ~ 150 | C | |
| Mass | 2.0 | g |
| Symbol | Items | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| IDRM | Repetitive Peak Off-State Current | VD = VDRM, Single Phase, Half Wave TJ = 125 C | - | - | 2.0 | mA |
| VTM | Peak On-State Voltage | IT = 20 A, Inst. Measurement | - | - | 1.4 | V |
| I+ GT1 | Gate Trigger Current | VD = 6 V, RL=10 | - | - | 30 | mA |
| I- GT1 | - | - | 30 | mA | ||
| I- GT3 | - | - | 30 | mA | ||
| V+ GT1 | Gate Trigger Voltage | VD = 6 V, RL=10 | - | - | 1.5 | V |
| V- GT1 | - | - | 1.5 | V | ||
| V- GT3 | - | - | 1.5 | V | ||
| VGD | Non-Trigger Gate Voltage | TJ = 125 C, VD = 1/2 VDRM | 0.2 | - | - | V |
| (dv/dt)c | Critical Rate of Rise Off-State Voltage at Commutation | TJ = 125 C, [di/dt]c = -6.0 A/ms, VD=2/3 VDRM | 10 | - | - | V/ |
| IH | Holding Current | - | 20 | - | mA | |
| Rth(j-c) | Thermal Impedance Junction to case | - | - | 3.3 | C/W |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
.gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c... .gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c...
Get in touch with us
Leave a Message, we will call you back quickly!