Hefei Purple Horn E-Commerce Co., Ltd.
| Pd - Power Dissipation | 625W |
| Td(off) | 130ns |
| Td(on) | 205ns |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | 7.348nF@30V |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.5V@250uA |
| Gate Charge(Qg) | 270nC@75A,15V |
| Reverse Recovery Time(trr) | 530ns |
| Switching Energy(Eoff) | 6mJ |
| Turn-On Energy (Eon) | 19.1mJ |
| Description | IGBT 1.2kV 115A 625W Through Hole TO-264 |
| Mfr. Part # | SL75T120FZ |
| Package | TO-264 |
| Model Number | SL75T120FZ |
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Product Specification
| Pd - Power Dissipation | 625W | Td(off) | 130ns |
| Td(on) | 205ns | Operating Temperature | -55℃~+150℃@(Tj) |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | Input Capacitance(Cies) | 7.348nF@30V |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.5V@250uA | Gate Charge(Qg) | 270nC@75A,15V |
| Reverse Recovery Time(trr) | 530ns | Switching Energy(Eoff) | 6mJ |
| Turn-On Energy (Eon) | 19.1mJ | Description | IGBT 1.2kV 115A 625W Through Hole TO-264 |
| Mfr. Part # | SL75T120FZ | Package | TO-264 |
| Model Number | SL75T120FZ |
| Parameter | Symbol | Tests conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Collector-Emmiter Voltage | Vce | 1200 | V | |||
| Collector Current-continuous (T=25) | IC | 115 | A | |||
| Collector Current-continuous (T=100) | IC | 75 | A | |||
| Diode forward current (Tc=100) | IF | 75 | A | |||
| Collector Current-pulse (note 1) | ICM | 230 | A | |||
| Gate-EMMiter Voltage | VGES | 30 | V | |||
| Power Dissipation (TO-264, Tc=25) | PD | 625 | W | |||
| Power Dissipation (TO-264, Tc=100) | PD | 250 | W | |||
| Power Dissipation (TO-247plus, Tc=25) | PD | 882 | W | |||
| Power Dissipation (TO-247plus, Tc=100) | PD | 441 | W | |||
| Operating and Storage Temperature Range | TJ,TSTG | -55 | +150 | |||
| Diode Maximum Forward Current (Note 1) | IFM | 250 | A | |||
| Short Circuit Withstand Time | tsc | 10 | us | |||
| Maximum Lead Temperature for Soldering Purposes | TL | 300 | ||||
| Collector-Emmiter Voltage | BVCES | Ic=250uA,VGE=0V | 1200 | - | - | V |
| Zero Gate Voltage Collector Current | ICES | VCE=1200V,VGE=0V, Tc=25 | - | - | 100 | A |
| Gate-body leakage current, forward | IGESF | VCE=0V,VGE=30V | - | - | 100 | nA |
| Gate-body leakage current, reverse | IGESR | VCE=0V,VGE=-30V | - | - | -100 | nA |
| Gate Threshold Voltage | VGE(th) | VCE=VGE,Ic=250uA | 4.5 | - | 6.5 | V |
| Collector-Emmiter saturation Voltage | VCESAT | VGE=15V lc=75A | - | 1.85 | 2.5 | V |
| Collector-Emmiter saturation Voltage | VCESAT | VGE=15V lc=75A TC=125 | - | 2.25 | V | |
| Collector-Emmiter saturation Voltage | VCESAT | VGE=15V lc=115A | - | 2.15 | V | |
| Input capacitance | Cies | VCE=30V, VGE=0V, f=1.0MHZ | - | 7348 | - | pF |
| Output capacitance | Coes | - | 312 | - | pF | |
| Reverse transfer capacitance | Cres | - | 38 | - | pF | |
| Turn-on delay time (Tc=25) | td(on) | VCC=600V,Ic=75A, RG=10VGE=15V, Inductive Load | - | 205 | - | ns |
| Turn-On rise time (Tc=25) | tr | VCC=600V,Ic=75A, RG=10VGE=15V, Inductive Load | - | 470 | - | ns |
| Turn-Off delay time (Tc=25) | td(off) | VCC=600V,Ic=75A, RG=10VGE=15V, Inductive Load | - | 130 | - | ns |
| Turn-Off Fall time (Tc=25) | tf | VCC=600V,Ic=75A, RG=10VGE=15V, Inductive Load | - | 295 | - | ns |
| Turn-on switching Loss (Tc=25) | Eon | VCC=600V,Ic=75A, RG=10VGE=15V, Inductive Load | - | 19.1 | - | mJ |
| Turn-off switching Loss (Tc=25) | Eoff | VCC=600V,Ic=75A, RG=10VGE=15V, Inductive Load | - | 6 | - | mJ |
| Total switching Loss (Tc=25) | Ets | VCC=600V,Ic=75A, RG=10VGE=15V, Inductive Load | - | 25.1 | - | mJ |
| Turn-on delay time (Tc=125) | td(on) | VCC=600V,Ic=75A, RG=10VGE=15V, Inductive Load | - | 190 | - | ns |
| Turn-On rise time (Tc=125) | tr | VCC=600V,Ic=75A, RG=10VGE=15V, Inductive Load | - | 365 | - | ns |
| Turn-Off delay time (Tc=125) | td(off) | VCC=600V,Ic=75A, RG=10VGE=15V, Inductive Load | - | 170 | - | ns |
| Turn-Off Fall time (Tc=125) | tf | VCC=600V,Ic=75A, RG=10VGE=15V, Inductive Load | - | 345 | - | ns |
| Turn-on switching Loss (Tc=125) | Eon | VCC=600V,Ic=75A, RG=10VGE=15V, Inductive Load | - | 15.7 | - | mJ |
| Turn-off switching Loss (Tc=125) | Eoff | VCC=600V,Ic=75A, RG=10VGE=15V, Inductive Load | - | 7.4 | - | mJ |
| Total switching Loss (Tc=125) | Ets | VCC=600V,Ic=75A, RG=10VGE=15V, Inductive Load | - | 23.1 | - | mJ |
| Total Gate Charge | Qg | VCC=600V, lc=75A VGE=15V | - | 270 | - | nC |
| Gate to emitter charge | Qge | VCC=600V, lc=75A VGE=15V | - | 105 | - | nC |
| Gate to collector charge | Qgc | VCC=600V, lc=75A VGE=15V | - | 140 | - | nC |
| Drain-Source Diode Forward Voltage | VF | IF=75A | - | 2.1 | 3.2 | V |
| Diode Reverse recovery time | trr | VCE=400V IF=75A dl=/dt=200A/us | - | 530 | - | ns |
| Reverse recovery charge | Qrr | VCE=400V IF=75A dl=/dt=200A/us | - | 1890 | - | nC |
| Diode Reverse recovery Current | IRRM | VCE=400V IF=75A dl=/dt=200A/us | - | 8.5 | - | A |
| Thermal Resistance,Junction to Case (IGBT, TO-264) | Rth(j-c) | - | 0.2 | - | /W | |
| Thermal Resistance,Junction to Case (IGBT, TO-247 plus) | Rth(j-c) | - | 0.17 | - | /W | |
| Thermal Resistance,Junction to Case (Diode, TO-264) | Rth(j-c) | - | 0.4 | - | /W | |
| Thermal Resistance,Junction to Case (Diode, TO-247 plus) | Rth(j-c) | - | 0.32 | - | /W | |
| Thermal Resistance,Junction to Ambient (TO-264) | Rth(j-A) | - | 25 | - | /W | |
| Thermal Resistance,Junction to Ambient (TO-247 plus) | Rth(j-A) | - | 40 | - | /W |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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