| Pd - Power Dissipation | 350W |
| Td(off) | 216ns |
| Td(on) | 93ns |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 80pF |
| Input Capacitance(Cies) | 1.6nF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.5V@600uA |
| Gate Charge(Qg) | 120nC@15V |
| Output Capacitance(Coes) | 120pF |
| Reverse Recovery Time(trr) | 236ns |
| Switching Energy(Eoff) | 1mJ |
| Turn-On Energy (Eon) | 2.8mJ |
| Description | IGBT 1.2kV 25A Through Hole TO-247 |
| Mfr. Part # | SL25T120FL |
| Package | TO-247 |
| Model Number | SL25T120FL |
View Detail Information
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Product Specification
| Pd - Power Dissipation | 350W | Td(off) | 216ns |
| Td(on) | 93ns | Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 80pF | Input Capacitance(Cies) | 1.6nF |
| IGBT Type | FS (Field Stop) | Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.5V@600uA |
| Gate Charge(Qg) | 120nC@15V | Output Capacitance(Coes) | 120pF |
| Reverse Recovery Time(trr) | 236ns | Switching Energy(Eoff) | 1mJ |
| Turn-On Energy (Eon) | 2.8mJ | Description | IGBT 1.2kV 25A Through Hole TO-247 |
| Mfr. Part # | SL25T120FL | Package | TO-247 |
| Model Number | SL25T120FL |
Features:
| Parameter | Symbol | Unit | Tc=25 | Tc=100 | Note |
|---|---|---|---|---|---|
| Collector-Emitter Voltage | Vces | V | 1200 | - | - |
| Collector Current-continuous | Ic | A | 50 | 25 | - |
| Collector Current-pulse | ICM | A | 60 | - | 1 |
| Diode forward current | IF | A | - | 25 | - |
| Gate-Emitter Voltage | VGES | V | 20 | - | - |
| Turn-off safe area | - | A | - | 60 | - |
| Power Dissipation | PD | W | 350 | - | - |
| Diode Forward Current | - | A | - | 25 | - |
| Operating and Storage Temperature Range | TJ,TSTG | -55~+150 | - | - | |
| Maximum Lead Temperature for Soldering Purposes | TL | 300 | - | - |
| Parameter | Symbol | Unit | Min | Typ | Max | Test Conditions |
|---|---|---|---|---|---|---|
| Collector-Emitter Voltage | BVCES | V | 1200 | - | - | IC=500uA,VGE=0V |
| Breakdown Voltage Temperature Coefficient | BVCES/TJ | V/ | - | 0.6 | - | IC=1mA,referenced to 25 |
| Zero Gate Voltage Collector Current | ICES | mA | - | - | 0.2 | VCE=1200V,VGE=0 V,TC=25 |
| Zero Gate Voltage Collector Current | ICES | mA | - | - | 2 | TC=100 |
| Zero Gate Voltage Collector Current | ICES | mA | - | - | 2.5 | TC=150 |
| Gate-body leakage current, forward | IGESF | nA | - | - | -100 | VCE=0V,VGE=-20V |
| Gate-Emitter Threshold Voltage | VGE(th) | V | 4.5 | - | 6.5 | VCE=VGE,lc=600u A |
| Collector-Emitter saturation Voltage | VCESAT | V | - | 1.75 | 2.5 | VGE=15V,IC=25A,Tc=25 |
| Collector-Emitter saturation Voltage | VCESAT | V | - | 2 | - | Tc=150 |
| Short Collector current | Ic(sc) | A | - | 160 | - | VGE=15V,VCE=600V,tsc<10us,Tc=25, Note 2 |
| Input capacitance | Cies | pF | - | 1600 | 2400 | VCE=25V, VGE=0V, f=1.0MHZ |
| Output capacitance | Coes | pF | - | 120 | 190 | VCE=25V, VGE=0V, f=1.0MHZ |
| Reverse transfer capacitance | Cres | pF | - | 80 | 130 | VCE=25V, VGE=0V, f=1.0MHZ |
| Turn-On delay time | td(on) | ns | - | 93 | - | VCE=600V,Ic=25A, RG=10,Tc=25Inductive Load, Note 3 |
| Turn-On rise time | tr | ns | - | 77 | - | VCE=600V,Ic=25A, RG=10,Tc=25Inductive Load, Note 3 |
| Turn-off delay time | td(off) | ns | - | 216 | - | VCE=600V,Ic=25A, RG=10,Tc=25Inductive Load, Note 3 |
| Turn-off Fall time | tf | ns | - | 108 | - | VCE=600V,Ic=25A, RG=10,Tc=25Inductive Load, Note 3 |
| Turn-on energy | Eon | mJ | - | 2.8 | - | VCE=600V,Ic=25A, RG=10,Tc=25Inductive Load, Note 3 |
| Turn-off energy | Eoff | mJ | - | 1.0 | - | VCE=600V,Ic=25A, RG=10,Tc=25Inductive Load, Note 3 |
| Total switching Energy | Etotal | mJ | - | 3.8 | - | VCE=600V,Ic=25A, RG=10,Tc=25Inductive Load, Note 3 |
| Total Gate Charge | Qg | nC | - | 120 | - | VCE=600V,Ic=25A ,VGE=15V, Note 3,4 |
| Parameter | Symbol | Unit | Min | Typ | Max | Test Conditions |
|---|---|---|---|---|---|---|
| Diode Forward Voltage | VF | V | - | 1.77 | 2.8 | VGE=0V,IF=25A |
| Diode Reverse recovery time | trr | ns | - | 236 | - | VGE=0V,VR=800V,IF=25A,dl=/dt=200/us, Note 4 |
| Reverse recovery charge | Qrr | uC | - | 1.3 | - | VGE=0V,VR=800V,IF=25A,dl=/dt=200/us, Note 4 |
| Parameter | Symbol | Tests conditions | Min | Typ | Max | Units |
|---|---|---|---|---|---|---|
| Thermal Resistance,Junction to Case | Rth(j-c) | - | - | - | 0.4 | /W |
| Thermal Resistance,Junction to Ambitent | Rth(j-A) | - | - | - | 40 | /W |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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