Hefei Purple Horn E-Commerce Co., Ltd.
| Td(off) | 282ns |
| Td(on) | 118ns |
| Operating Temperature | -55℃~+175℃@(Tj) |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | 7.383nF@20V |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.5V@250uA |
| Gate Charge(Qg) | 311nC@50A,15V |
| Reverse Recovery Time(trr) | 256ns |
| Switching Energy(Eoff) | 1.4mJ |
| Turn-On Energy (Eon) | 4.4mJ |
| Description | IGBT 1.2kV 100A Through Hole TO-264 |
| Mfr. Part # | SL50T120FZ |
| Package | TO-264 |
| Model Number | SL50T120FZ |
View Detail Information
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Product Specification
| Td(off) | 282ns | Td(on) | 118ns |
| Operating Temperature | -55℃~+175℃@(Tj) | Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | 7.383nF@20V | Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.5V@250uA |
| Gate Charge(Qg) | 311nC@50A,15V | Reverse Recovery Time(trr) | 256ns |
| Switching Energy(Eoff) | 1.4mJ | Turn-On Energy (Eon) | 4.4mJ |
| Description | IGBT 1.2kV 100A Through Hole TO-264 | Mfr. Part # | SL50T120FZ |
| Package | TO-264 | Model Number | SL50T120FZ |
SLKORMicro
SL50T120FZ
Standard
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Collector-Emitter Voltage | VCES | 1200 | V | |||
| Collector Current-continuous (Tc=25) | Ic | 100 | A | |||
| Collector Current-continuous (Tc=100) | Ic | 50 | A | |||
| Collector Current-pulse | ICM | (note 1) | 200 | A | ||
| Diode Continuous forward current (Tc=100) | IF | 50 | A | |||
| Diode Maximum Forward Current | IFM | (Note 1) | 200 | A | ||
| Gate-Emitter Voltage | VGES | 20 | V | |||
| Short Circuit Withstand Time | tsc | 10 | us | |||
| Power Dissipation (Tc=25) | PD | 535 | W | |||
| Power Dissipation (Tc=100) | PD | 267 | W | |||
| Operating Temperature Range | TJ | -55 | +175 | |||
| Storage Temperature Range | TSTG | -55 | +175 | |||
| Maximum Lead Temperature for Soldering | TL | 260 | ||||
| Collector-Emitter Voltage (Breakdown) | BVCES | IC=500A,VGE=0V | 1200 | V | ||
| Zero Gate Voltage Collector Current | ICES | VCE=1200V,VGE=0V | 0.1 | mA | ||
| Zero Gate Voltage Collector Current (Tc=175) | ICES | VCE=1200V,VGE=0V | 2.0 | mA | ||
| Gate-body leakage current | IGES | VCE=0V,VGE=20V | 200 | nA | ||
| Gate-Emitter Threshold Voltage | VGE(th) | VCE=VGE, lc=250uA | 4.5 | 5.5 | 6.5 | V |
| Collector-Emitter saturation Voltage (Tc=25) | VCESAT | VGE=15V,IC=50A | 2.20 | V | ||
| Collector-Emitter saturation Voltage (Tc=175) | VCESAT | VGE=15V, IC=50A | 2.60 | V | ||
| Input capacitance | Cies | VCE=20V, VGE=0V, f=1.0MHZ, Tc=25 | 7383 | pF | ||
| Output capacitance | Coes | VCE=20V, VGE=0V, f=1.0MHZ, Tc=25 | 233 | pF | ||
| Reverse transfer capacitance | Cres | VCE=20V, VGE=0V, f=1.0MHZ, Tc=25 | 139 | pF | ||
| Total Gate Charge | Qg | VCE=600V,IC=50A, VGE=15V,TC=25C | 311 | nC | ||
| Gate to emitter charge | Qge | VCE=600V,IC=50A, VGE=15V,TC=25C | 64 | |||
| Gate to collector charge | Qgc | VCE=600V,IC=50A, VGE=15V,TC=25C | 155 | |||
| Turn-On delay time (Tc=25) | td(on) | VCC=600V,Ic=50A, RG=10,VGE=15V Inductive load | 118 | ns | ||
| Turn-On rise time (Tc=25) | tr | VCC=600V,Ic=50A, RG=10,VGE=15V Inductive load | 48 | ns | ||
| Turn-off delay time (Tc=25) | td(off) | VCC=600V,Ic=50A, RG=10,VGE=15V Inductive load | 282 | ns | ||
| Turn-off Fall time (Tc=25) | tf | VCC=600V,Ic=50A, RG=10,VGE=15V Inductive load | 113 | ns | ||
| Turn-on switching loss (Tc=25) | Eon | VCC=600V,Ic=50A, RG=10,VGE=15V Inductive load | 4.40 | mJ | ||
| Turn-off switching loss (Tc=25) | Eoff | VCC=600V,Ic=50A, RG=10,VGE=15V Inductive load | 1.40 | mJ | ||
| Total switching loss (Tc=25) | Ets | VCC=600V,Ic=50A, RG=10,VGE=15V Inductive load | 5.80 | mJ | ||
| Turn-On delay time (Tc=175) | td(on) | VCC=600V,Ic=50A, RG=10,VGE=15V Inductive load | 114 | ns | ||
| Turn-On rise time (Tc=175) | tr | VCC=600V,Ic=50A, RG=10,VGE=15V Inductive load | 49 | ns | ||
| Turn-off delay time (Tc=175) | td(off) | VCC=600V,Ic=50A, RG=10,VGE=15V Inductive load | 298 | ns | ||
| Turn-off Fall time (Tc=175) | tf | VCC=600V,Ic=50A, RG=10,VGE=15V Inductive load | 243 | ns | ||
| Turn-on switching loss (Tc=175) | Eon | VCC=600V,Ic=50A, RG=10,VGE=15V Inductive load | 5.65 | mJ | ||
| Turn-off switching loss (Tc=175) | Eoff | VCC=600V,Ic=50A, RG=10,VGE=15V Inductive load | 3.26 | mJ | ||
| Total switching loss (Tc=175) | Ets | VCC=600V,Ic=50A, RG=10,VGE=15V Inductive load | 8.91 | mJ | ||
| Diode Forward Voltage (Tc=25) | VF | VGE=0V,IF=50A | 2.00 | 2.60 | V | |
| Diode Forward Voltage (Tc=175) | VF | VGE=0V,IF=50A | 2.55 | V | ||
| Diode Reverse recovery time (Tc=25) | trr | VR=400V,IF=50A dlF/dt=200A/us | 256 | ns | ||
| Diode Reverse recovery charge (Tc=25) | Qrr | VR=400V,IF=50A dlF/dt=200A/us | 2.7 | C | ||
| Diode Reverse recovery Current (Tc=25) | Irrm | VR=400V,IF=50A dlF/dt=200A/us | 19 | A | ||
| Diode Reverse recovery time (Tc=175) | trr | VR=400V,IF=50A dlF/dt=200A/us | 400 | ns | ||
| Diode Reverse recovery charge (Tc=175) | Qrr | VR=400V,IF=50A dlF/dt=200A/us | 5.75 | C | ||
| Diode Reverse recovery Current (Tc=175) | Irrm | VR=400V,IF=50A dlF/dt=200A/us | 27 | A | ||
| Thermal Resistance, Junction to case (IGBT) | Rth j-c | 0.28 | /W | |||
| Thermal Resistance, Junction to case (Diode) | Rth j-c | 0.5 | /W | |||
| Thermal Resistance, Junction to Ambient | Rth j-a | 40 | /W |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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