Hefei Purple Horn E-Commerce Co., Ltd.
| Td(off) | 52ns |
| Pd - Power Dissipation | 162W |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Td(on) | 16ns |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Input Capacitance(Cies) | - |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.5V@250uA |
| Gate Charge(Qg) | 43.9nC@20A,15V |
| Reverse Recovery Time(trr) | - |
| Switching Energy(Eoff) | 300uJ |
| Turn-On Energy (Eon) | 790uJ |
| Description | IGBT FS (Field Stop) 650V 40A 162W Surface Mount TO-263 |
| Mfr. Part # | SL20T65K1 |
| Package | TO-263 |
| Model Number | SL20T65K1 |
View Detail Information
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Product Specification
| Td(off) | 52ns | Pd - Power Dissipation | 162W |
| Operating Temperature | -55℃~+150℃@(Tj) | Td(on) | 16ns |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | Input Capacitance(Cies) | - |
| IGBT Type | FS (Field Stop) | Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.5V@250uA |
| Gate Charge(Qg) | 43.9nC@20A,15V | Reverse Recovery Time(trr) | - |
| Switching Energy(Eoff) | 300uJ | Turn-On Energy (Eon) | 790uJ |
| Description | IGBT FS (Field Stop) 650V 40A 162W Surface Mount TO-263 | Mfr. Part # | SL20T65K1 |
| Package | TO-263 | Model Number | SL20T65K1 |
Features:
SLKormicro
SL20T65F1/K1/FL1
RoHS
TO-247, TO-263, TO-220F
| Parameter | Symbol | Tests conditions | Min | Typ | Max | Unit | TO-263/TO-247 | TO-220F |
|---|---|---|---|---|---|---|---|---|
| Collector-Emmiter Voltage | Vces | 650 | V | |||||
| Collector Current-continuous (T=25) | Ic | 40 | A | |||||
| Collector Current-continuous (T=100) | Ic | 20 | A | |||||
| Collector Current-pulse | ICM | 80 | A | |||||
| Diode RMS forward current (T=25) | IF | 40 | A | |||||
| Diode RMS forward current (T=100) | IF | 20 | A | |||||
| Gate-Emmiter Voltage | VGES | 20 | V | |||||
| Turn-off safe area | -180 | A | ||||||
| Surge non repetitive forward current | IFSM | tp=10ms sinusoidal | 80 | A | ||||
| Power Dissipation (TO-247/TO-263) | PD | TC=25 | 162 | W | X | |||
| Power Dissipation (TO-220F) | PD | TC=25 | 46 | W | X | |||
| Diode Forward Current | TC=100 | 20 | A | |||||
| Operating and Storage Temperature Range | TJ,TSTG | -55 | +150 | |||||
| Maximum Lead Temperature for Soldering Purposes | TL | 300 | ||||||
| Collector-Emmiter Voltage | BVCES | IC=500A,VGE=0V | 650 | - | - | V | ||
| IGBT Breakdown Voltage Temperature Coefficient | BVCES/TJ | IC=1mA,referenced to 25 | - | 0.5 | - | V/ | ||
| Zero Gate Voltage Collector Current | ICES | VCE=650V,VGE=0 V,TC=25 | - | 10 | A | |||
| Gate-body leakage current | IGESF | VCE=0V,VGE= 20V | - | - | 200 | nA | ||
| Gate-Emmiter Threshold Voltage | VGE(th) | VCE=VGE, lc=250uA | 4.5 | - | 6.5 | V | ||
| Collector-Emmiter saturation Voltage | VCESAT | VGE=15V,IC=20A TC=25 | - | 1.6 | 2.0 | V | X | X |
| Collector-Emmiter saturation Voltage | VCESAT | Tc=125 | - | 1.75 | 2.15 | V | X | X |
| Collector-Emmiter saturation Voltage | VCESAT | TC=175 | - | 1.9 | 2.3 | V | X | X |
| Short Collector current | Ic(sc) | VGE=15V VCE=360V tsc< 10us Tc=25 | 116.7 | A | ||||
| Input capacitance | Cies | VCE=25V, VGE=0V, f=1.0MHZ, Tc=25 | - | 1500 | - | pF | ||
| Output capacitance | Coes | - | 128 | - | pF | |||
| Reverse transfer capacitance | Cres | - | 28.7 | - | pF | |||
| Turn-On delay time | td(on) | VCE=400V,Ic=20A ,RG=10,VGE=15 V Tc=25 Inductive Load | - | 16 | - | ns | ||
| Turn-On rise time | tr | - | 56 | - | ns | |||
| Turn-off delay time | td(off) | - | 52 | - | ns | |||
| Turn-off Fall time | tf | - | 82 | - | ns | |||
| Turn-on energy | Eon | - | 0.79 | - | mJ | |||
| Turn-off energy | Eoff | - | 0.3 | - | mJ | |||
| Total switching Energy | Etotal | - | 1.09 | - | mJ | |||
| Total Gate Charge | Qg | VCE=400V,Ic=20 ARG=10,VGE=1 5V | - | 43.9 | - | nC | ||
| Diode Forward Voltage | VF | VGE=0V,IF=20A. TC=25 | - | 1.4 | - | V | X | X |
| Diode Forward Voltage | VF | VGE=0V,IF=20A. TC=175 | - | 1.0 | - | V | X | X |
| Diode Reverse recovery time | trr | VGE=0V, IF=20A dl=/dt=100A/us | - | 254 | - | ns | ||
| Diode Reverse recovery charge | Qrr | - | 347 | - | uC | |||
| Diode Reverse recovery Current | Irrm | - | 2.7 | - | A | |||
| IGBT Thermal Resistance,Junction to Case | Rth(j-c) | 0.77 | /W | X | ||||
| FRD Thermal Resistance,Junction to Case | Rth(j-c) | 2.05 | /W | X | ||||
| Thermal Resistance,Junction to Ambitent | Rth(j-A) | 33.8 | /W | X | X |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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