This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low−voltage, high− speed switching applications in power supplies, converters, and power motor controls. These devices are particularly well suited for brid gecircuits where diode speed and commutating safe operating areas are critical and offer an additional safety margin against unexpected
voltage transients.

Features
• Avalanche Energy Specified
• IDSS and VDS(on) Specified at Elevated Temperature
• Designed for Low−Voltage, High−Speed Switching Applications and to Withstand High Energy in the Avalanche and Commutation Modes
• NVD and SVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements;
AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant

• Battery protectionWhy buy from us >>> Fast / Safely / Conveniently
• SKL is a Stock keeper and trade company of Electronic components .Our branches office include China, Hong Kong, Sigapore , Canada . Offer business, service, resourcing and information for our global member.
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Payment Terms	L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability	999999
Delivery Time	1-3 days
Packaging Details	standard
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	12A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	180mOhm @ 6A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Vgs (Max)	±20V
Brand Name	onsemi
Model Number	NTD2955T4G
Place of Origin	original


Payment Terms	L/C, D/A, D/P, T/T, Western Union, MoneyGram	Supply Ability	999999
Delivery Time	1-3 days	Packaging Details	standard
Drain to Source Voltage (Vdss)	60V	Current - Continuous Drain (Id) @ 25°C	12A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V	Rds On (Max) @ Id, Vgs	180mOhm @ 6A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA	Vgs (Max)	±20V
Brand Name	onsemi	Model Number	NTD2955T4G
Place of Origin	original

Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	12A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	180mOhm @ 6A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	30 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	750 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	55W (Tj)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	DPAK
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

NTD2955T4G MOSFET Power Electronics P-Channel DPAK -60 V -12 A NVD SVD

Bronze Gleitlager

Bronze Sleeve Bushings

Graphite Plugged Bushings